DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description EO The MC-458CB646EFB, MC-458CB646PFB and MC-458CB646XFB are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features • 8,388,608 words by 64 bits organization • Clock frequency and access time from CLK /CAS latency Clock frequency Access time from CLK (MAX.) (MAX.) CL = 3 125 MHz 6 ns CL = 2 100 MHz 6 ns CL = 3 100 MHz 6 ns L Part number MC-458CB646EFB-A80 MC-458CB646EFB-A10 MC-458CB646PFB-A10 77 MHz 7 ns CL = 3 125 MHz 6 ns CL = 2 100 MHz 6 ns CL = 3 100 MHz 6 ns CL = 2 77 MHz 7 ns CL = 3 CL = 2 MC-458CB646XFB-A10 CL = 3 CL = 2 od MC-458CB646XFB-A80 Pr MC-458CB646PFB-A80 CL = 2 125 MHz 6 ns 100 MHz 6 ns 100 MHz 6 ns 77 MHz 7 ns t uc • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge • Pulsed interface • Possible to assert random column address in every cycle • Quad internal banks controlled by BA0 and BA1 (Bank Select) • Programmable burst-length (1, 2, 4, 8 and full page) • Programmable wrap sequence (sequential / interleave) • Programmable /CAS latency (2, 3) • Automatic precharge and controlled precharge • CBR (Auto) refresh and self refresh • All DQs have 10 Ω ± 10 % of series resistor • Single 3.3 V ± 0.3 V power supply The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for availability and additional information. Document No. E0063N10 (1st edition) (Previous No. M13049EJ8V0DS00) Date Published January 2001 CP (K) Printed in Japan This product became EOL in March, 2004. Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC-458CB646 • LVTTL compatible • 4,096 refresh cycles/64 ms • Burst termination by Burst Stop command and Precharge command • 168-pin dual in-line memory module (Pin pitch = 1.27 mm) • Unbuffered type • Serial PD Ordering Information Part number Clock frequency Package Mounted devices (MAX.) 125 MHz 168-pin Dual In-line Memory Module 4 pieces of µPD45128163G5 (Rev. E) MC-458CB646EFB-A10 100 MHz (Socket Type) (10.16 mm (400) TSOP (II)) MC-458CB646PFB-A80 125 MHz Edge connector : Gold plated 4 pieces of µPD45128163G5 (Rev. P) MC-458CB646PFB-A10 100 MHz 25.4 mm height (10.16 mm (400) TSOP (II)) MC-458CB646XFB-A80 125 MHz 4 pieces of µPD45128163G5 (Rev. X) MC-458CB646XFB-A10 100 MHz (10.16 mm (400) TSOP (II)) MC-458CB646EFB-A80 L EO t uc od Pr 2 Data Sheet E0063N10 MC-458CB646 Pin Configuration 168-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated) 85 86 87 88 89 90 91 92 93 94 VSS DQ32 DQ33 DQ34 DQ35 Vcc DQ36 DQ37 DQ38 DQ39 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 CLK1 NC VSS CKE0 NC DQMB6 DQMB7 NC Vcc NC NC NC NC VSS DQ48 DQ49 DQ50 DQ51 Vcc DQ52 NC NC NC VSS DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 Vcc DQ60 DQ61 DQ62 DQ63 VSS CLK3 NC SA0 SA1 SA2 Vcc DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 Vcc DQ14 DQ15 NC NC VSS NC NC Vcc /WE DQMB0 DQMB1 /CS0 NC VSS A0 A2 A4 A6 A8 A10 BA1 (A12) Vcc 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 L 1 2 3 4 5 6 7 8 9 10 /××× indicates active low signal. 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 A0 - A11 : Address Inputs [Row: A0 - A11, Column: A0 - A8] BA0 (A13), BA1 (A12) : SDRAM Bank Select DQ0 - DQ63 : Data Inputs/Outputs CLK0 - CLK3 : Clock Input CKE0 : Clock Enable Input /CS0, /CS2 : Chip Select Input /RAS : Row Address Strobe /CAS : Column Address Strobe /WE : Write Enable DQMB0 - DQMB7 : DQ Mask Enable SA0 - SA2 : Address Input for EEPROM SDA : Serial Data I/O for PD SCL : Clock Input for PD VCC : Power Supply od Pr Vcc CLK0 VSS NC /CS2 DQMB2 DQMB3 NC Vcc NC NC NC NC VSS DQ16 DQ17 DQ18 DQ19 Vcc DQ20 NC NC NC VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 Vcc DQ28 DQ29 DQ30 DQ31 VSS CLK2 NC WP SDA SCL Vcc VSS WP NC Data Sheet E0063N10 t uc DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 Vcc DQ46 DQ47 NC NC VSS NC NC Vcc /CAS DQMB4 DQMB5 NC /RAS VSS A1 A3 A5 A7 A9 BA0 (A13) A11 Vcc EO 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 VSS DQ0 DQ1 DQ2 DQ3 Vcc DQ4 DQ5 DQ6 DQ7 : Ground : Write Protect : No Connection 3 MC-458CB646 Block Diagram /WE /CS0 /CS2 DQMB 4 LDQM DQ 32 DQ 33 DQ 34 DQ 35 DQ 36 DQ 38 DQ 37 DQ 39 DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 UDQM DQ 7 DQ 6 DQ 5 DQ 4 DQ 3 DQ 2 DQ 1 DQ 0 DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 DQMB 6 DQMB 5 D1 /CS /WE LDQM UDQM DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 DQMB 7 DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 LDQM D2 D5 DQMB 3 UDQM DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 DQ31 DQ30 DQ29 DQ28 DQ27 DQ26 DQ25 DQ24 DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 CLK : D1, D2 od UDQM C A0 - A11 A0 - A11 : D1, D2, D4, D5 BA0 CLK2 CLK : D4, D5 C /CS /WE DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DQMB 1 CLK0 /CS /WE D4 DQMB 2 Pr DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 LDQM DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 L EO DQMB 0 /CS /WE A13 : D1, D2, D4, D5 BA1 A12 : D1, D2, D4, D5 /RAS /RAS : D1, D2, D4, D5 /CAS : D1, D2, D4, D5 CKE0 C t uc /CAS CLK1, CLK3 CKE : D1, D2, D4, D5 SERIAL PD SDA VCC SCL D1, D2, D4, D5 C VSS A0 D1, D2, D4, D5 A1 A2 47 kΩ SA0 SA1 SA2 Remarks 1. The value of all resistors is 10 Ω except WP. 2. D1, D2, D4, D5 : µPD45128163 (2M words × 16 bits × 4 banks) 4 WP Data Sheet E0063N10 MC-458CB646 Electrical Specifications • All voltages are referenced to VSS (GND). • After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Condition Rating Unit VCC –0.5 to +4.6 V Voltage on input pin relative to GND VT –0.5 to +4.6 V Short circuit output current IO 50 mA Power dissipation PD 4 W EO Voltage on power supply pin relative to GND Operating ambient temperature TA 0 to 70 °C Storage temperature Tstg –55 to +125 °C Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. L Recommended Operating Conditions Parameter TYP. MAX. Unit VCC 3.0 3.3 3.6 V High level input voltage VIH 2.0 VCC + 0.3 V VIL −0.3 +0.8 V TA 0 70 °C Low level input voltage Operating ambient temperature Symbol Condition Pr MIN. Supply voltage Capacitance (TA = 25 °C, f = 1 MHz) Test condition MIN. MAX. Unit CI1 A0 - A11, BA0 (A13), BA1 (A12), /RAS, /CAS, /WE 15 40 pF CI2 CLK0, CLK2 20 40 CI3 CKE0 15 40 CI4 /CS0, /CS2 10 20 CI5 DQMB0 - DQMB7 3 13 CI/O DQ0 - DQ63 4 13 Data Sheet E0063N10 TYP. pF t uc Data input/output capacitance Symbol od Parameter Input capacitance 5 MC-458CB646 DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) Parameter Operating current Symbol ICC1 Test condition Burst length = 1 Grade MIN. MAX. /CAS latency = 2 tRC ≥ tRC(MIN.), IO = 0 mA /CAS latency = 3 Precharge standby current in power down mode Precharge standby current in ICC2P EO power down mode Active standby current in ICC2N 400 -A80 400 -A10 400 CKE ≤ VIL(MAX.), tCK = 15 ns 4 1 mA 4 CKE ≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.), 80 ICC2NS CKE ≥ VIH(MIN.), tCK = ∞, Input signals are stable. mA ICC3P 32 CKE ≤ VIL(MAX.), tCK = 15 ns 20 ICC3PS CKE ≤ VIL(MAX.), tCK = ∞ ICC3N mA 16 CKE ≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.), 120 mA Input signals are changed one time during 30 ns. ICC3NS CKE ≥ VIH(MIN.), tCK = ∞, Input signals are stable. ICC4 tCK ≥ tCK(MIN.), IO = 0 mA 80 /CAS latency = 2 (Burst mode) L CBR (Auto) refresh current -A10 mA Input signals are changed one time during 30 ns. non power down mode Operating current 400 ICC2PS CKE ≤ VIL(MAX.), tCK = ∞ non power down mode Active standby current in -A80 Unit Notes ICC5 /CAS latency = 3 tRC ≥ tRC(MIN.) /CAS latency = 2 ICC6 Input leakage current II(L) Output leakage current IO(L) High level output voltage VOH Low level output voltage VOL 480 -A10 380 -A80 580 -A10 500 -A80 920 -A10 920 -A80 920 -A10 920 CKE ≤ 0.2 V mA 2 mA 3 8 mA –4 +4 µA DOUT is disabled, VO = 0 to 3.6 V –1.5 +1.5 µA IO = –4.0 mA 2.4 VI = 0 to 3.6 V, All other pins not under test = 0 V IO = +4.0 mA od Self refresh current Pr /CAS latency = 3 -A80 V 0.4 V Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.). 2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.). 3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.). t uc 6 Data Sheet E0063N10 MC-458CB646 AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) Test Conditions Parameter AC high level input voltage / low level input voltage Input timing measurement reference level Transition time (Input rise and fall time) Output timing measurement reference level Value Unit 2.4 / 0.4 V 1.4 V 1 ns 1.4 V CLK tCL 2.4 V 1.4 V 0.4 V tSETUP tHOLD Input 2.4 V 1.4 V 0.4 V L EO tCK tCH tAC tOH Output t uc od Pr Data Sheet E0063N10 7 MC-458CB646 Synchronous Characteristics Parameter Clock cycle time Access time from CLK Symbol -A80 -A10 MIN. MAX. Unit MIN. MAX. /CAS latency = 3 tCK3 8 (125 MHz) 10 (100 MHz) ns /CAS latency = 2 tCK2 10 (100 MHz) 13 (77 MHz) ns /CAS latency = 3 tAC3 6 6 ns 1 /CAS latency = 2 tAC2 6 7 ns 1 tCH 3 3 ns CLK low level width tCL 3 3 ns Data-out hold time tOH 3 3 ns Data-out low-impedance time tLZ 0 0 ns /CAS latency = 3 tHZ3 3 6 3 6 /CAS latency = 2 6 3 7 EO CLK high level width Data-out high-impedance time 1 ns ns tHZ2 3 Data-in setup time tDS 2 2 ns Data-in hold time tDH 1 1 ns Address setup time tAS 2 2 ns tAH 1 1 ns CKE setup time tCKS 2 2 ns tCKH 1 1 ns CKE setup time (Power down exit) tCKSP 2 2 ns Command (/CS0, /CS2, /RAS, /CAS, /WE, tCMS 2 2 ns tCMH 1 1 ns L Address hold time CKE hold time Note DQMB0 - DQMB7) setup time DQMB0 - DQMB7) hold time Note 1. Output load Pr Command (/CS0, /CS2, /RAS, /CAS, /WE, Z = 50 Ω Output od 50 pF Remark These specifications are applied to the monolithic device. t uc 8 Data Sheet E0063N10 MC-458CB646 Asynchronous Characteristics Parameter Symbol -A80 MIN. -A10 MAX. MIN. 120,000 50 Unit MAX. tRC 70 ACT to PRE command period tRAS 48 PRE to ACT command period tRP 20 20 ns Delay time ACT to READ/WRITE command tRCD 20 20 ns ACT(one) to ACT(another) command period tRRD 16 20 ns Data-in to PRE command period tDPL 8 10 ns Data-in to ACT(REF) command period /CAS latency = 3 tDAL3 1CLK+20 1CLK+20 ns (Auto precharge) tDAL2 1CLK+20 1CLK+20 ns tRSC 2 2 CLK tT 0.5 EO REF to REF/ACT command period /CAS latency = 2 Mode register set cycle time Transition time Refresh time (4,096 refresh cycles) tREF 70 30 1 64 Note ns 120,000 ns 30 ns 64 ms L t uc od Pr Data Sheet E0063N10 9 MC-458CB646 Serial PD (1/2) Byte No. 0 Function Described Defines the number of bytes written into Hex Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Notes 80H 1 0 0 0 0 0 0 0 128 bytes serial PD memory Total number of bytes of serial PD memory 08H 0 0 0 0 1 0 0 0 256 bytes 2 Fundamental memory type 04H 0 0 0 0 0 1 0 0 SDRAM 3 Number of rows 0CH 0 0 0 0 1 1 0 0 12 rows 4 Number of columns 09H 0 0 0 0 1 0 0 1 9 columns 5 Number of banks 01H 0 0 0 0 0 0 0 1 1 bank 6 Data width 40H 0 1 0 0 0 0 0 0 64 bits 7 Data width (continued) 00H 0 0 0 0 0 0 0 0 0 8 Voltage interface 01H 0 0 0 0 0 0 0 1 LVTTL 9 CL = 3 Cycle time -A80 80H 1 0 0 0 0 0 0 0 8 ns -A10 A0H 1 0 1 0 0 0 0 0 10 ns -A80 60H 0 1 1 0 0 0 0 0 6 ns -A10 60H 0 1 1 0 0 0 0 0 6 ns EO 1 10 CL = 3 Access time DIMM configuration type 00H 0 0 0 0 0 0 0 0 None 12 Refresh rate/type 80H 1 0 0 0 0 0 0 0 Normal 13 SDRAM width 10H 0 0 0 1 0 0 0 0 ×16 14 Error checking SDRAM width 00H 0 0 0 0 0 0 0 0 None 15 Minimum clock delay 01H 0 0 0 0 0 0 0 1 1 clock 16 Burst length supported 8FH 1 0 0 0 1 1 1 1 1, 2, 4, 8, F 17 Number of banks on each SDRAM 04H 0 0 0 0 0 1 0 0 4 banks 18 /CAS latency supported 06H 0 0 0 0 0 1 1 0 2, 3 19 /CS latency supported 01H 0 0 0 0 0 0 0 1 0 20 /WE latency supported 01H 0 0 0 0 0 0 0 1 0 L 11 Pr SDRAM module attributes 00H 0 0 0 0 0 0 0 0 22 SDRAM device attributes : General 0EH 0 0 0 0 1 1 1 0 23 CL = 2 Cycle time -A80 A0H -A10 D0H 24 CL = 2 Access time -A80 60H -A10 70H 25-26 14H 1 0 1 0 0 0 0 0 10 ns 1 1 0 1 0 0 0 0 13 ns 0 1 1 0 0 0 0 0 6 ns 0 1 1 1 0 0 0 0 7 ns 0 0 0 0 0 0 0 0 0 0 0 1 0 1 0 0 tRP(MIN.) -A80 -A10 14H 0 0 0 1 28 tRRD(MIN.) -A80 10H 0 0 0 1 -A10 14H 0 0 0 1 14H 0 0 0 1 29 tRCD(MIN.) -A80 -A10 14H 0 0 0 1 30 tRAS(MIN.) -A80 30H 0 0 1 1 -A10 32H 0 0 1 1 10H 0 0 0 1 Module bank density Data Sheet E0063N10 20 ns 0 1 0 0 20 ns 0 0 0 0 16 ns 0 1 0 0 20 ns 0 1 0 0 20 ns t uc 27 31 10 00H od 21 0 1 0 0 20 ns 0 0 0 0 48 ns 0 0 1 0 50 ns 0 0 0 0 64M bytes MC-458CB646 (2/2) Byte No. 32 Function Described Command and address signal input Hex Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Notes 20H 0 0 1 0 0 0 0 0 2 ns 10H 0 0 0 1 0 0 0 0 1 ns setup time 33 Command and address signal input hold time 34 Data signal input setup time 20H 0 0 1 0 0 0 0 0 2 ns 35 Data signal input hold time 10H 0 0 0 1 0 0 0 0 1 ns 00H 0 0 0 0 0 0 0 0 12H 0 0 0 1 0 0 1 0 -A80 E7H 1 1 1 0 0 1 1 1 -A10 4DH 0 1 0 0 1 1 0 1 64H 0 1 1 0 0 1 0 0 36-61 SPD revision 63 Checksum for bytes 0 - 62 EO 62 64-71 72 Manufacture’s JEDEC ID code Manufacturing location 73-90 Manufacture’s P/N 91-92 Revision code 93-94 Manufacturing date 95-98 Assembly serial number L 99-125 1.2 Mfg specific 126 Intel specification frequency 127 Intel specification /CAS -A80 A7H 1 0 1 0 0 1 1 1 latency support -A10 A5H 1 0 1 0 0 1 0 1 Pr Timing Chart 100 MHz Refer to the µPD45128441, 45128841, 45128163 Data sheet (E0031N). t uc od Data Sheet E0063N10 11 MC-458CB646 Package Drawing 168-PIN DUAL IN-LINE MODULE (SOCKET TYPE) A(AREA B) Y N Z M1(AREA B) Q EO R M2(AREA A) S A J T B H (OPTIONAL HOLES) U K E C B I M L G D L A1(AREA A) ITEM A Pr detail of A part detail of B part D2 W od V P X D1 MILLIMETERS 133.35 A1 133.35±0.13 B C 11.43 36.83 D D1 6.35 2.00 D2 E G 3.125 54.61 6.35 H 1.27 (T.P.) I J 8.89 24.495 K 42.18 L 17.78 25.4±0.13 5.62 19.78 2.80 MAX. P Q R S T 1.00 R2.0 4.00±0.10 φ 3.00 1.27±0.10 U V 4.0 MIN. 0.20±0.15 W X 1.00±0.05 2.54±0.10 Y 3.00 MIN. Z 3.00 MIN. M168S-50A103 t uc M M1 M2 N 12 Data Sheet E0063N10 MC-458CB646 [ MEMO ] L EO t uc od Pr Data Sheet E0063N10 13 MC-458CB646 [ MEMO ] L EO t uc od Pr 14 Data Sheet E0063N10 MC-458CB646 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement EO tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence L causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. Pr 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does od not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. t uc Data Sheet E0063N10 15 MC-458CB646 CAUTION FOR HANDLING MEMORY MODULES When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory IC, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. When re-packing memory modules, be sure the modules are NOT touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules. L EO • The information in this document is current as of September, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of Elpida's data sheets or data books, etc., for the most up-to-date specifications of Elpida semiconductor products. Not all products and/or types are available in every country. Please check with an Elpida Memory, Inc. for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of Elpida. Elpida assumes no responsibility for any errors that may appear in this document. • Elpida does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of Elpida semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. Elpida assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While Elpida endeavours to enhance the quality, reliability and safety of Elpida semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in Elpida semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • Elpida semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of Elpida semiconductor products is "Standard" unless otherwise expressly specified in Elpida's data sheets or data books, etc. If customers wish to use Elpida semiconductor products in applications not intended by Elpida, they must contact an Elpida Memory, Inc. in advance to determine Elpida's willingness to support a given application. (Note) (1) "Elpida" as used in this statement means Elpida Memory, Inc. and also includes its majority-owned subsidiaries. (2) "Elpida semiconductor products" means any semiconductor product developed or manufactured by or for Elpida (as defined above). t uc od Pr M8E 00. 4