ONSEMI MC34074DR2G

MC34071,2,4,A
MC33071,2,4,A
Single Supply 3.0 V to 44 V
Operational Amplifiers
Quality bipolar fabrication with innovative design concepts are
employed for the MC33071/72/74, MC34071/72/74 series of
monolithic operational amplifiers. This series of operational
amplifiers offer 4.5 MHz of gain bandwidth product, 13 V/s slew rate
and fast settling time without the use of JFET device technology.
Although this series can be operated from split supplies, it is
particularly suited for single supply operation, since the common
mode input voltage range includes ground potential (VEE). With a
Darlington input stage, this series exhibits high input resistance, low
input offset voltage and high gain. The all NPN output stage,
characterized by no deadband crossover distortion and large output
voltage swing, provides high capacitance drive capability, excellent
phase and gain margins, low open loop high frequency output
impedance and symmetrical source/sink AC frequency response.
The MC33071/72/74, MC34071/72/74 series of devices are
available in standard or prime performance (A Suffix) grades and are
specified over the commercial, industrial/vehicular or military
temperature ranges. The complete series of single, dual and quad
operational amplifiers are available in plastic DIP, SOIC and TSSOP
surface mount packages.
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PDIP−8
P SUFFIX
CASE 626
8
1
SOIC−8
D SUFFIX
CASE 751
8
1
PDIP−14
P SUFFIX
CASE 646
14
1
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Wide Bandwidth: 4.5 MHz
High Slew Rate: 13 V/s
Fast Settling Time: 1.1 s to 0.1%
Wide Single Supply Operation: 3.0 V to 44 V
Wide Input Common Mode Voltage Range: Includes Ground (VEE)
Low Input Offset Voltage: 3.0 mV Maximum (A Suffix)
Large Output Voltage Swing: −14.7 V to +14 V (with ±15 V
Supplies)
Large Capacitance Drive Capability: 0 pF to 10,000 pF
Low Total Harmonic Distortion: 0.02%
Excellent Phase Margin: 60°
Excellent Gain Margin: 12 dB
Output Short Circuit Protection
ESD Diodes/Clamps Provide Input Protection for Dual and Quad
Pb−Free Packages are Available
 Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 8
1
SOIC−14
D SUFFIX
CASE 751A
14
1
14
1
TSSOP−14
DTB SUFFIX
CASE 948G
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 17 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 18 of this data sheet.
Publication Order Number:
MC34071/D
MC34071,2,4,A MC33071,2,4,A
PIN CONNECTIONS
CASE 646/CASE 751A/CASE 948G
CASE 626/CASE 751
Offset Null
Inputs
VEE
1
8
NC
2
−
7
VCC
3
+
6
Output
5
Offset Null
4
Output 1
Inputs 1
VCC
8
2
Inputs 1
VEE
7
−
+
3
−
+
4
2
13
−
+
VCC
Output 2
Output 2
4
1
−
+
Inputs 4
11
+
−
6
3
2
Output 4
12
4
5
Inputs 2
1
14
3
(Single, Top View)
Output 1
1
VEE
10
+
−
9
7
8
Inputs 3
Output 3
6
5
Inputs 2
(Quad, Top View)
(Dual, Top View)
VCC
Q3
Q4
Q6
Q5
Q1
Q7
Q17
Q2
R1
C1
R2
D2
Bias
Q8
−
Q9
Q11
Q10
Q18
R6
R7
Output
R8
Inputs
+
C2
D3
Q19
Base
Current
Cancellation
Q13
Q15
Q14
Q16
Q12
Current
Limit
D1
R5
R3
R4
VEE/GND
Offset Null
(MC33071, MC34071 only)
Figure 1. Representative Schematic Diagram
(Each Amplifier)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VS
+44
V
Input Differential Voltage Range
VIDR
(Note 1)
V
Input Voltage Range
VIR
(Note 1)
V
Output Short Circuit Duration (Note 2)
tSC
Indefinite
Sec
Operating Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
−60 to +150
°C
Supply Voltage (from VEE to VCC)
1. Either or both input voltages should not exceed the magnitude of VCC or VEE.
2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (see Figure 2).
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2
MC34071,2,4,A MC33071,2,4,A
ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = −15 V, RL = connected to ground, unless otherwise noted. See Note 3 for
TA = Tlow to Thigh)
A Suffix
Characteristics
Symbol
Input Offset Voltage (RS = 100 , VCM = 0 V, VO = 0 V)
VCC = +15 V, VEE = −15 V, TA = +25°C
VCC = +5.0 V, VEE = 0 V, TA = +25°C
VCC = +15 V, VEE = −15 V, TA = Tlow to Thigh
VIO
Input Bias Current (VCM = 0 V, VO = 0 V)
TA = +25°C
TA = Tlow to Thigh
IIB
Input Offset Current (VCM = 0 V, VO = 0V)
TA = +25°C
TA = Tlow to Thigh
IIO
Input Common Mode Voltage Range
TA = +25°C
TA = Tlow to Thigh
VICR
Large Signal Voltage Gain (VO = ±10 V, RL = 2.0 k)
TA = +25°C
TA = Tlow to Thigh
AVOL
Output Voltage Swing (VID = ±1.0 V)
VCC = +5.0 V, VEE = 0 V, RL = 2.0 k, TA = +25°C
VCC = +15 V, VEE = −15 V, RL = 10 k, TA = +25°C
VCC = +15 V, VEE = −15 V, RL = 2.0 k,
TA = Tlow to Thigh
VOH
VCC = +5.0 V, VEE = 0 V, RL = 2.0 k, TA = +25°C
VCC = +15 V, VEE = −15 V, RL = 10 k, TA = +25°C
VCC = +15 V, VEE = −15 V, RL = 2.0 k,
TA = Tlow to Thigh
VOL
Typ
Max
0.5
0.5
−
3.0
3.0
5.0
−
10
−
−
−
100
−
−
−
6.0
−
−
−
−
VIO/T
Average Temperature Coefficient of Input Offset
Voltage
RS = 10 , VCM = 0 V, VO = 0 V,
TA = Tlow to Thigh
Min
Non−Suffix
Min
Typ
Max
1.0
1.5
−
5.0
5.0
7.0
−
10
−
500
700
−
−
100
−
500
700
50
300
−
−
6.0
−
75
300
−
−
−
mV
V/°C
nA
nA
V
VEE to (VCC −1.8)
VEE to (VCC −2.2)
Output Short Circuit Current (VID = 1.0 V, VO = 0 V,
TA = 25°C)
Source
Sink
Unit
VEE to (VCC −1.8)
VEE to (VCC −2.2)
V/mV
50
25
100
−
−
−
25
20
100
−
−
−
3.7
13.6
13.4
4.0
14
−
−
−
−
3.7
13.6
13.4
4.0
14
−
−
−
−
0.1
−14.7
−
0.3
−14.3
−13.5
−
−
−
0.1
−14.7
−
0.3
−14.3
−13.5
V
−
−
−
ISC
V
mA
10
20
30
30
−
−
10
20
30
30
−
−
Common Mode Rejection
RS ≤ 10 k, VCM = VICR, TA = 25°C
CMR
80
97
−
70
97
−
dB
Power Supply Rejection (RS = 100 )
VCC/VEE = +16.5 V/−16.5 V to +13.5 V/−13.5 V,
TA = 25°C
PSR
80
97
−
70
97
−
dB
−
−
−
1.6
1.9
−
2.0
2.5
2.8
−
−
−
1.6
1.9
−
2.0
2.5
2.8
Power Supply Current (Per Amplifier, No Load)
VCC = +5.0 V, VEE = 0 V, VO = +2.5 V, TA = +25°C
VCC = +15 V, VEE = −15 V, VO = 0 V, TA = +25°C
VCC = +15 V, VEE = −15 V, VO = 0 V,
TA = Tlow to Thigh
3. Tlow
= −40°C for MC33071, 2, 4, /A
= 0°C for MC34071, 2, 4, /A
= −40°C for MC34072, 4/V
ID
Thigh
mA
= +85°C for MC33071, 2, 4, /A
= +70°C for MC34071, 2, 4, /A
= +125°C for MC34072, 4/V
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3
MC34071,2,4,A MC33071,2,4,A
AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = −15 V, RL = connected to ground. TA = +25°C, unless otherwise noted.)
A Suffix
Characteristics
Symbol
Slew Rate (Vin = −10 V to +10 V, RL = 2.0 k, CL = 500 pF)
AV = +1.0
AV = −1.0
Non−Suffix
Min
Typ
Max
Min
Typ
Max
8.0
−
10
13
−
−
8.0
−
10
13
−
−
−
−
1.1
2.2
−
−
−
−
1.1
2.2
−
−
GBW
3.5
4.5
−
3.5
4.5
−
MHz
BW
−
160
−
−
160
−
kHz
−
−
60
40
−
−
−
−
60
40
−
−
−
−
12
4.0
−
−
−
−
12
4.0
−
−
SR
Setting Time (10 V Step, AV = −1.0)
To 0.1% (+1/2 LSB of 9−Bits)
To 0.01% (+1/2 LSB of 12−Bits)
V/s
s
ts
Gain Bandwidth Product (f = 100 kHz)
Power Bandwidth
AV = +1.0, RL = 2.0 k, VO = 20 Vpp, THD = 5.0%
Unit
Phase margin
RL = 2.0 k
RL = 2.0 k, CL = 300 pF
fm
Gain Margin
RL = 2.0 k
RL = 2.0 k, CL = 300 pF
Am
Equivalent Input Noise Voltage
RS = 100 , f = 1.0 kHz
en
−
32
−
−
32
−
nV/ √ Hz
Equivalent Input Noise Current
f = 1.0 kHz
in
−
0.22
−
−
0.22
−
pA/ √ Hz
Differential Input Resistance
VCM = 0 V
Rin
−
150
−
−
150
−
M
Differential Input Capacitance
VCM = 0 V
Cin
−
2.5
−
−
2.5
−
pF
THD
−
0.02
−
−
0.02
−
%
−
−
120
−
−
120
−
dB
|ZO|
−
30
−
−
30
−
W
Total Harmonic Distortion
AV = +10, RL = 2.0 k, 2.0 Vpp ≤ VO ≤ 20 Vpp, f = 10 kHz
Channel Separation (f = 10 kHz)
Open Loop Output Impedance (f = 1.0 MHz)
Single Supply
Deg
dB
Split Supplies
VCC+|VEE|≤44 V
3.0 V to 44 V
VCC
VCC
VCC
2
1
VCC
1
3
2
2
3
3
VEE
4
6
+
1
5
4
10 k
4
VEE
7
−
VEE
Offset nulling range is approximately ± 80 mV with a 10 k
potentiometer (MC33071, MC34071 only).
VEE
Figure 2. Power Supply Configurations
Figure 3. Offset Null Circuit
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V IO INPUT OFFSET VOLTAGE (mV)
V,
2400
2000
1600
8 & 14 Pin Plastic Pkg
SOIC−14 Pkg
1200
800
SOIC−8 Pkg
400
0
−55 −40 −20
0
20
40
60
80
0
−2.0
−4.0
100 120 140 160
−55
−25
0
25
50
75
100
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Maximum Power Dissipation versus
Temperature for Package Types
Figure 5. Input Offset Voltage versus
Temperature for Representative Units
VCC
VCC/VEE = +1.5 V/ −1.5 V to +22 V/ −22 V
VCC −0.8
VCC −1.6
VCC −2.4
VEE +0.01
VEE
VEE
−55
−25
0
25
50
75
100
125
125
1.3
VCC = +15 V
VEE = −15 V
VCM = 0
1.2
1.1
1.0
0.9
0.8
0.7
−55
−25
0
25
50
75
100
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Input Common Mode Voltage
Range versus Temperature
Figure 7. Normalized Input Bias Current
versus Temperature
125
50
1.4
VCC = +15 V
VEE = −15 V
TA = 25°C
1.2
VO, OUTPUT VOLTAGE SWING (Vpp )
I,
IB INPUT BIAS CURRENT (NORMALIZED)
2.0
TA, AMBIENT TEMPERATURE (°C)
VCC
1.0
0.8
0.6
VCC = +15 V
VEE = −15 V
VCM = 0
4.0
V,
ICR INPUT COMMON MODE VOLTAGE RANGE (V)
I,
IB INPUT BIAS CURRENT (NORMALIZED)
P,
D MAXIMUM POWER DISSIPATION (mW)
MC34071,2,4,A MC33071,2,4,A
RL Connected
to Ground TA = 25°C
40
30
RL = 10 k
RL = 2.0 k
20
10
0
−12
−8.0
−4.0
0
4.0
8.0
12
0
5.0
10
15
20
VIC, INPUT COMMON MODE VOLTAGE (V)
VCC, |VEE|, SUPPLY VOLTAGE (V)
Figure 8. Normalized Input Bias Current versus
Input Common Mode Voltage
Figure 9. Split Supply Output Voltage
Swing versus Supply Voltage
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5
25
VCC/VEE = +5.0 V/ −5.0 V to +22 V/ −22 V
TA = 25°C
VCC
VCC −1.0
Source
VCC −2.0
VEE +2.0
VEE +1.0
Sink
VEE
VEE
0
5.0
10
15
Vsat , OUTPUT SATURATION VOLTAGE (V)
VCC
VCC
0.2
0.1
GND
0
100
20
10 k
100 k
RL, LOAD RESISTANCE TO GROUND ()
Figure 10. Single Supply Output Saturation
versus Load Resistance to VCC
Figure 11. Split Supply Output Saturation
versus Load Current
60
VCC
−0.8
2.0
VCC = +15 V
RL to VCC
TA = 25°C
1.0
GND
100
1.0 k
10 k
Sink
40
Source
30
20
VCC = +15 V
VEE = −15 V
RL ≤ 0.1 Vin = 1.0 V
10
−25
0
25
50
75
100
RL, LOAD RESISTANCE TO VCC ()
TA, AMBIENT TEMPERATURE (°C)
Figure 12. Single Supply Output Saturation
versus Load Resistance to Ground
Figure 13. Output Short Circuit Current
versus Temperature
VO, OUTPUT VOLTAGE SWING (Vpp )
20
AV = 1000
AV = 100
AV = 10
AV = 1.0
10
10 k
125
28
VCC = +15 V
VEE = −15 V
VCM = 0
VO = 0
IO = ±0.5 mA
TA = 25°C
0
1.0 k
50
0
−55
100 k
50
Z,
Ω
O OUTPUT IMPEDANCE ()
1.0 k
IL, LOAD CURRENT (± mA)
−0.4
30
VCC = +15 V
RL = GND
TA = 25°C
VCC−4.0
0
40
VCC
VCC−2.0
I,
SC OUTPUT CURRENT (mA)
Vsat , OUTPUT SATURATION VOLTAGE (V)
Vsat , OUTPUT SATURATION VOLTAGE (V)
MC34071,2,4,A MC33071,2,4,A
100
f, FREQUENCY (Hz)
1.0 M
20
16
12
8.0
4.0
0
3.0 k
10 M
VCC = +15 V
VEE = −15 V
AV = +1.0
RL = 2.0 k
THD ≤ 1.0%
TA = 25°C
24
Figure 14. Output Impedance
versus Frequency
10 k
30 k
100 k
300 k
f, FREQUENCY (Hz)
1.0 M
Figure 15. Output Voltage Swing
versus Frequency
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6
3.0 M
AV = 1000
0.3
VCC = +15 V
VEE = −15 V
VO = 2.0 Vpp
RL = 2.0 k
TA = 25°C
0.2
AV = 100
0.1
AV = 10
AV = 1.0
0
10
100
1.0 k
10 k
108
AV = 1000
2.0
AV = 100
1.0
AV = 10
AV = 1.0
0
0
4.0
16
20
Figure 17. Total Harmonic Distortion
versus Output Voltage Swing
100
VCC = +15 V
VEE = −15 V
VO= −10 V to +10 V
RL = 10 k
f ≤ 10Hz
−25
0
25
50
75
100
0
80
Phase
Margin
= 60°
40
20
VCC = +15 V
VEE = −15 V
VO = 0 V
RL = 2.0 k
TA = 25°C
10
GBW, GAIN BANDWIDTH PRODUCT (NORMALIED)
100
Gain
Margin = 12 dB
120
140
−10
1. Phase RL = 2.0 k
2. Phase RL = 2.0 k, CL = 300 pF
−20 3. Gain RL = 2.0 k
4. Gain RL = 2.0 k, CL = 300 pF
−30 VCC = +15 V
VEE = 15 V
VO = 0 VTA = 25°C
−40
1.0
2.0
3.0 5.0
7.0
3
160
180
4
2
10
135
180
100
1.0 k
10 k
100 k
1.0 M
10 M
100 M
Figure 19. Open Loop Voltage Gain and
Phase versus Frequency
Phase
Margin = 60°
0
90
f, FREQUENCY (Hz)
20
φ, EXCESS PHASE (DEGREES)
1
45
60
0
1.0
125
Gain
Phase
Figure 18. Open Loop Voltage Gain
versus Temperature
A,
VOL OPEN LOOP VOLTAGE GAIN (dB)
12
Figure 16. Total Harmonic Distortion
versus Frequency
TA, AMBIENT TEMPERATURE (°C)
10
8.0
VO, OUTPUT VOLTAGE SWING (Vpp)
100
20
VCC = +15 V
VEE = −15 V
RL = 2.0 k
TA = 25°C
f, FREQUENCY (Hz)
104
96
−55
3.0
100 k
116
112
4.0
φ, EXCESS PHASE (DEGREES)
A,
VOL OPEN LOOP VOLTAGE GAIN (dB)
THD, TOTAL HARMONIC DISTORTION (%)
0.4
A,
VOL OPEN LOOP VOLTAGE GAIN (dB)
THD, TOTAL HARMONIC DISTORTION (%)
MC34071,2,4,A MC33071,2,4,A
30
1.15
VCC = +15 V
VEE = −15 V
RL = 2.0 k
1.1
1.05
1.0
0.95
0.9
0.85
−55
−25
0
25
50
75
100
f, FREQUENCY (MHz)
TA, AMBIENT TEMPERATURE (°C)
Figure 20. Open Loop Voltage Gain and
Phase versus Frequency
Figure 21. Normalized Gain Bandwidth
Product versus Temperature
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7
125
MC34071,2,4,A MC33071,2,4,A
70
VCC = +15 V
VEE = −15 V
RL = 2.0 k
VO = −10 V to +10 V
TA = 25°C
80
60
φ m , PHASE MARGIN (DEGREES)
40
20
0
10
100
1.0 k
VCC = +15 V
VEE = −15 V
AV = +1.0
RL = 2.0 k to VO = −10 V to +10 V
TA = 25°C
60
50
40
30
20
10
0
10
10 k
100
CL, LOAD CAPACITANCE (pF)
Figure 23. Phase Margin versus
Load Capacitance
14
φ m , PHASE MARGIN (DEGREES)
80
VCC = +15 V
VEE = −15 V
AV = +1.0
RL = 2.0 k to ∞
VO = −10 V to +10 V
TA = 25°C
12
A,
m GAIN MARGIN (dB)
10 k
CL, LOAD CAPACITANCE (pF)
Figure 22. Percent Overshoot versus
Load Capacitance
10
8.0
6.0
4.0
2.0
0
10
100
1.0 k
CL = 10 pF
CL = 100 pF
60
40
CL = 1,000 pF
20
VCC = +15 V
VEE = −15 V
AV = +1.0
RL = 2.0 k to ∞
VO = −10 V to +10 V
CL = 10,000 pF
0
−55
10 k
−25
0
25
50
75
100
125
CL, LOAD CAPACITANCE (pF)
TA, AMBIENT TEMPERATURE (°C)
Figure 24. Gain Margin versus Load Capacitance
Figure 25. Phase Margin versus Temperature
16
8.0
4.0
10
CL = 10 pF
VEE = −15 V
AV = +1.0
RL = 2.0 k to ∞
VO = −10 V to +10 V
A,
m GAIN MARGIN (dB)
12
CL = 100 pF
CL = 10,000 pF
CL = 1,000 pF
−25
0
25
50
75
100
125
60
Gain
8.0
R1
6.0
50
−
VO
40
+
R2
4.0
2.0
0
0
−55
70
12
VCC = +15 V
A,
m GAIN MARGIN (dB)
1.0 k
30
VCC = +15 V
VEE = −15 V
RT = R1 + R2
AV = +100
VO = 0 V
TA = 25°C
1.0
10
20
Phase
10
100
1.0 k
10 k
TA, AMBIENT TEMPERATURE (°C)
RT, DIFFERENTIAL SOURCE RESISTANCE ()
Figure 26. Gain Margin versus Temperature
Figure 27. Phase Margin and Gain Margin
versus Differential Source Resistance
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8
0
100 k
φ m , PHASE MARGIN (DEGREES)
PERCENT OVERSHOOT
100
∆ V,
O OUTPUT VOLTAGE SWING FROM 0 V (V)
MC34071,2,4,A MC33071,2,4,A
1.1
1.05
1.0
0.95
0.9
0.85
−55
50 mV/DIV
VCC = +15 V
VEE = −15 V
AV = +1.0
RL = 2.0 k
CL = 500 pF
0
−25
0
25
50
75
100
125
10
1.0 mV
5.0
Compensated
Uncompensated
0
1.0 mV
−5.0
10 mV
1.0 mV
−10
0
0.5
1.0
1.5
3.0
Figure 28. Normalized Slew Rate
versus Temperature
Figure 29. Output Settling Time
VCC = +15 V
VEE = −15 V
AV = +1.0
RL = 2.0 k
CL = 300 pF
TA = 25°C
100
VCC = +15 V
VEE = −15 V
AV = +1.0
RL = 2.0 k
CL = 300 pF
TA = 25°C
0
Figure 31. Large Signal Transient Response
100
TA = 125°C
VCC = +15 V
VEE = −15 V
VCM = 0 V
VCM = ±1.5 V
TA = 25°C
TA = −55°C
60
40
−
ADM
VCM
20
VCM
CMR = 20 Log
1.0
VO
+
VO
10
100
x ADM
1.0 k
3.5
1.0 s/DIV
PSR, POWER SUPPLY REJECTION (dB)
CMR, COMMON MODE REJECTION (dB)
2.5
ts, SETTLING TIME (s)
Figure 30. Small Signal Transient Response
0
0.1
2.0
TA, AMBIENT TEMPERATURE (°C)
2.0 s/DIV
80
VCC = +15 V
VEE = −15 V
AV = −1.0
TA = 25°C
1.0 mV
10 mV
5.0 V/DIV
SR, SLEW RATE (NORMALIZED)
1.15
10 k
100 k
1.0 M
10 M
VCC = +15 V
VEE = −15 V
TA = 25°C
80
VCC
60
−
ADM
VEE
40
+PSR = 20 Log
20
1.0
+PSR
VO/ADM
VCC
VO/ADM
−PSR = 20 Log
0
0.1
(VCC = +1.5 V)
VO
+
−PSR
(VEE = +1.5 V)
VEE
10
100
1.0 k
10 k
100 k
1.0 M 10 M
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 32. Common Mode Rejection
versus Frequency
Figure 33. Power Supply Rejection
versus Frequency
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9
MC34071,2,4,A MC33071,2,4,A
105
TA = −55°C
8.0
7.0
TA = 25°C
6.0
TA = 125°C
5.0
4.0
0
5.0
10
15
20
+PSR (VCC = +1.5 V)
85
+PSR = 20 Log
75
VCC
VO/ADM
−
ADM
VCC
VO
+
−PSR = 20 Log
−25
0
VO/ADM
VEE
VEE
25
50
75
100
VCC, |VEE|, SUPPLY VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 34. Supply Current versus
Supply Voltage
Figure 35. Power Supply Rejection
versus Temperature
e,
n INPUT NOICE VOLTAGE ( nV √ Hz)
CHANNEL SEPARATION (dB)
80
VCC = +15 V
VEE = −15 V
95
65
−55
25
120
100
−PSR (VEE = +1.5 V)
VCC = +15 V
VEE = −15 V
TA = 25°C
60
40
20
0
2.8
70
VCC = +15 V
VEE = −15 V
VCM = 0
TA = 25°C
60
50
40
20
30
50
70
100
200
300
2.4
2.0
1.6
Voltage
30
1.2
Current
20
0.8
10
0.4
0
10
125
10
100
1.0 k
10 k
0
100 k
i,
n INPUT NOISE CURRENT (pA √ Hz )
PSR, POWER SUPPLY REJECTION (dB)
I
CC , SUPPLY CURRENT (mA)
9.0
f, FREQUENCY (kHz)
f, FREQUENCY (kHz)
Figure 36. Channel Separation versus Frequency
Figure 37. Input Noise versus Frequency
APPLICATIONS INFORMATION
CIRCUIT DESCRIPTION/PERFORMANCE FEATURES
Although the bandwidth, slew rate, and settling time of the
MC34071 amplifier series are similar to op amp products
utilizing JFET input devices, these amplifiers offer other
additional distinct advantages as a result of the PNP
transistor differential input stage and an all NPN transistor
output stage.
Since the input common mode voltage range of this input
stage includes the VEE potential, single supply operation is
feasible to as low as 3.0 V with the common mode input
voltage at ground potential.
The input stage also allows differential input voltages up
to ±44 V, provided the maximum input voltage range is not
exceeded. Specifically, the input voltages must range
between VEE and VCC supply voltages as shown by the
maximum rating table. In practice, although not
recommended, the input voltages can exceed the VCC
voltage by approximately 3.0 V and decrease below the VEE
voltage by 0.3 V without causing product damage, although
output phase reversal may occur. It is also possible to source
up to approximately 5.0 mA of current from VEE through
either inputs clamping diode without damage or latching,
although phase reversal may again occur.
If one or both inputs exceed the upper common mode
voltage limit, the amplifier output is readily predictable and
may be in a low or high state depending on the existing input
bias conditions.
Since the input capacitance associated with the small
geometry input device is substantially lower (2.5 pF) than
the typical JFET input gate capacitance (5.0 pF), better
frequency response for a given input source resistance can
be achieved using the MC34071 series of amplifiers. This
performance feature becomes evident, for example, in fast
settling D−to−A current to voltage conversion applications
where the feedback resistance can form an input pole with
the input capacitance of the op amp. This input pole creates
a 2nd order system with the single pole op amp and is
therefore detrimental to its settling time. In this context,
lower input capacitance is desirable especially for higher
http://onsemi.com
10
MC34071,2,4,A MC33071,2,4,A
minimum current sink capability, typically to an output
voltage of (VEE +1.8 V). In single supply applications the
output can directly source or sink base current from a
common emitter NPN transistor for fast high current
switching applications.
In addition, the all NPN transistor output stage is
inherently fast, contributing to the bipolar amplifier’s high
gain bandwidth product and fast settling capability. The
associated high frequency low output impedance (30 typ
@ 1.0 MHz) allows capacitive drive capability from 0 pF to
10,000 pF without oscillation in the unity closed loop gain
configuration. The 60° phase margin and 12 dB gain margin
as well as the general gain and phase characteristics are
virtually independent of the source/sink output swing
conditions. This allows easier system phase compensation,
since output swing will not be a phase consideration. The
high frequency characteristics of the MC34071 series also
allow excellent high frequency active filter capability,
especially for low voltage single supply applications.
Although the single supply specifications is defined at
5.0 V, these amplifiers are functional to 3.0 V @ 25°C
although slight changes in parametrics such as bandwidth,
slew rate, and DC gain may occur.
If power to this integrated circuit is applied in reverse
polarity or if the IC is installed backwards in a socket, large
unlimited current surges will occur through the device that
may result in device destruction.
Special static precautions are not necessary for these
bipolar amplifiers since there are no MOS transistors on the
die.
As with most high frequency amplifiers, proper lead
dress, component placement, and PC board layout should be
exercised for optimum frequency performance. For
example, long unshielded input or output leads may result in
unwanted input−output coupling. In order to preserve the
relatively low input capacitance associated with these
amplifiers, resistors connected to the inputs should be
immediately adjacent to the input pin to minimize additional
stray input capacitance. This not only minimizes the input
pole for optimum frequency response, but also minimizes
extraneous “pick up” at this node. Supply decoupling with
adequate capacitance immediately adjacent to the supply pin
is also important, particularly over temperature, since many
types of decoupling capacitors exhibit great impedance
changes over temperature.
The output of any one amplifier is current limited and thus
protected from a direct short to ground. However, under
such conditions, it is important not to allow the device to
exceed the maximum junction temperature rating. Typically
for ±15 V supplies, any one output can be shorted
continuously to ground without exceeding the maximum
temperature rating.
values of feedback resistances (lower current DACs). This
input pole can be compensated for by creating a feedback
zero with a capacitance across the feedback resistance, if
necessary, to reduce overshoot. For 2.0 k of feedback
resistance, the MC34071 series can settle to within 1/2 LSB
of 8−bits in 1.0 s, and within 1/2 LSB of 12−bits in 2.2 s
for a 10 V step. In a inverting unity gain fast settling
configuration, the symmetrical slew rate is ±13 V/s. In the
classic noninverting unity gain configuration, the output
positive slew rate is +10 V/s, and the corresponding
negative slew rate will exceed the positive slew rate as a
function of the fall time of the input waveform.
Since the bipolar input device matching characteristics
are superior to that of JFETs, a low untrimmed maximum
offset voltage of 3.0 mV prime and 5.0 mV downgrade can
be economically offered with high frequency performance
characteristics. This combination is ideal for low cost
precision, high speed quad op amp applications.
The all NPN output stage, shown in its basic form on the
equivalent circuit schematic, offers unique advantages over
the more conventional NPN/PNP transistor Class AB output
stage. A 10 k load resistance can swing within 1.0 V of the
positive rail (VCC), and within 0.3 V of the negative rail
(VEE), providing a 28.7 Vpp swing from ±15 V supplies.
This large output swing becomes most noticeable at lower
supply voltages.
The positive swing is limited by the saturation voltage of
the current source transistor Q7, and VBE of the NPN pull up
transistor Q17, and the voltage drop associated with the short
circuit resistance, R7. The negative swing is limited by the
saturation voltage of the pull−down transistor Q16, the
voltage drop ILR6, and the voltage drop associated with
resistance R7, where IL is the sink load current. For small
valued sink currents, the above voltage drops are negligible,
allowing the negative swing voltage to approach within
millivolts of VEE. For large valued sink currents (>5.0 mA),
diode D3 clamps the voltage across R6, thus limiting the
negative swing to the saturation voltage of Q16, plus the
forward diode drop of D3 (≈VEE +1.0 V). Thus for a given
supply voltage, unprecedented peak−to−peak output voltage
swing is possible as indicated by the output swing
specifications.
If the load resistance is referenced to VCC instead of
ground for single supply applications, the maximum
possible output swing can be achieved for a given supply
voltage. For light load currents, the load resistance will pull
the output to VCC during the positive swing and the output
will pull the load resistance near ground during the negative
swing. The load resistance value should be much less than
that of the feedback resistance to maximize pull up
capability.
Because the PNP output emitter−follower transistor has
been eliminated, the MC34071 series offers a 20 mA
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11
MC34071,2,4,A MC33071,2,4,A
(Typical Single Supply Applications VCC = 5.0 V)
VCC
5.1 M
VO
0
3.7 Vpp
0
VCC
20 k
100 k
1.0 M
Cin
CO
+
VO
68 k
MC34071
36.6 mVpp
Cin
−
100 k
Vin
1.0 k
10 k
RL
−
VO
CO
10 k
RL
100 k
AV = 10 BW (−3.0 dB) = 450 kHz
Figure 38. AC Coupled Noninverting Amplifier
Figure 39. AC Coupled Inverting Amplifier
VCC
4.75 Vpp
2.63 V
+
MC34071
10 k
Vin 370 mVpp
AV = 101
BW (−3.0 dB) = 45 kHz
VO
3.7 Vpp
91 k
5.1 k
RL
5.1 k
2.5 V
+
MC34071
100 k
VO
0
−
0 to 10,000 pF
+
Vin
1.0 M
−
Vin
C
0.047
R1
16 k
C
0.01
32 k
R
16 k
VO
VCC
fo = 30 kHz
Ho = 10
Ho = 1.0
Given fo = Center Frequency
AO = Gain at Center Frequency
Choose Value fo, Q, Ao, C
R3 =
fo = 1.0 kHz
fo =
2.0 C
0.02
+
0.4 VCC
Then:
2.0 R
MC34071
C
0.047
MC34071
+
R3
2.2 k
−
1.1 k
R2
5.6 k
VO
−
R
TTL Gate
Figure 41. Unity Gain Buffer TTL Driver
Vin
Vin
Cable
AV = 10
BW (−3.0 dB) = 450 kHz
Figure 40. DC Coupled Inverting Amplifier
Maximum Output Swing
Vin ≥ 0.2 Vdc
MC54/74XX
MC34071
1
4RC
Q
R3
R1 = foC
2Ho
R2 =
R1 R3
4Q2R1−R3
For less than 10% error from operational amplifier
Qofo
GBW
< 0.1
where fo and GBW are expressed in Hz.
GBW = 4.5 MHz Typ.
2.0 C
0.02
Figure 43. Active Bandpass Filter
Figure 42. Active High−Q Notch Filter
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12
MC34071,2,4,A MC33071,2,4,A
Vin
CF
2.0 V
RF
5.0 k
5.0 k
5.0 k
Vin
−
VO
MC34071
10 k
10 k
+
10 k
VO
+
MC34071
t
−
2.0 k
RL
VCC
1.0 V
VO
0.2 s
Delay
4.0 V
Bit
Switches
13 V/s
(R−2R) Ladder Network
25 V/s
0.1
t
Delay
1.0 s
Settling Time
1.0 s (8−Bits, 1/2 LSB)
Figure 44. Low Voltage Fast D/A Converter
Figure 45. High Speed Low Voltage Comparator
VCC
ON"
Vin < Vref
VCC
VCC
+
Vin
RL
MC34071
−
Vref
+
+
MC34071
MC34071
−
−
ON"
Vin > Vref
RL
(A) PNP
Figure 46. LED Driver
(B) NPN
Figure 47. Transistor Driver
ILoad
RF
+
MC34071
VO
−
Ground Current
Sense Resistor
RS
−
ICell
MC34071
R1
R2
VO
+
VO = ILoad RS
1+
R1
R2
For VO > 0.1V
BW ( −3.0 dB) = GBW
VCell = 0 V
R2
R1+R2
VO = ICell RF
VO > 0.1 V
Figure 48. AC/DC Ground Current Monitor
Figure 49. Photovoltaic Cell Amplifier
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13
MC34071,2,4,A MC33071,2,4,A
Hysteresis
VO
R2
Vref
VOH
R1
Iout
+
MC34071
VOL
−
Vin
Vin
Vin
VinL
VinL =
R1
(VOL−Vref)+Vref
R1+R2
VinH =
R1
(VOH−Vref)+Vref
R1+R2
VH =
R1
(VOH −VOL)
R1+R
MC34071
Vref
−
Iout =
Figure 50. Low Input Voltage Comparator
with Hysteresis
R1
+
VinH
R
R
Figure 51. High Compliance Voltage to
Sink Current Converter
R2
+Vref
R4
RF
− 1/2
R3
− 1/2
MC34072
MC34072
+V1
Vin±VIO
+
R
VO
R
−
+
+V2
R
R = R
R2
R4
=
(Critical to CMRR)
R1
R3
R4
R4
VO = 1 +
V2−V1
R3
R3
For (V2 ≥ V1), V > 0
Figure 52. High Input Impedance
Differential Amplifier
+
VO = Vref
RF
R < < R
RF > > R
R RF
2R2
(VO ≥ 0.1 V)
Figure 53. Bridge Current Amplifier
fOSC 0.85
RC
+ IB
V
VP
0
t
−
Vin
+
VO
MC34071
VO = Vin (pk)
+
ISC
t
Base Charge
Removal
MC34071
−
Iout
RL
VP
10,000 pF
C
+ 1/2
MC34072
+
−
V+
±IB
100 k
100 k
Vin
R
MC34072
− 1/2
+
47 k
VP
Pulse Width
Control Group
VP
OSC
t
Figure 54. Low Voltage Peak Detector
Comparator
High Current
Output
Figure 55. High Frequency Pulse
Width Modulation
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MC34071,2,4,A MC33071,2,4,A
GENERAL ADDITIONAL APPLICATIONS INFORMATION VS = ±15.0 V
C2
0.02
R1
560
C2
0.05
−
R2
5.6 k
R3
510
MC34071
C1
1.0
−
R2
1.1 k
MC34071
C1
0.44
R1
46.1 k
C1
1.0
fo = 1.0 kHz
Ho = 10
+
fo = 100 Hz
Ho = 20
+
Then: R1 =
Choose: fo, Ho, C1
Choose: fo, Ho, C2
Then: C1 = 2C2 (Ho+1)
R2 =
2
R3 =
4foC2
R2
Ho+1
R1 =
R2 =
R2
Ho
C2 =
Figure 56. Second Order Low−Pass Active Filter
Ho+0.5
foC1 2
2
2foC1 (1/Ho+2)
C
Ho
Figure 57. Second Order High−Pass Active Filter
CF*
VO = 10 V
Step
RF
2.0 k
+
−
MC34071
MC34071
R1
VO
+
I
High Speed
DAC
Vin
ts = 1.0 s
Uncompensated
RL
R2
to 1/2 LSB (8−Bits)
ts = 2.2 s
Compensated
VO
to 1/2 LSB (12−Bits)
Vin
=
R2
BW (−3.0 dB) = GBW
R1
SR = 13 V/s
*Optional Compensation
VO
−
R1
R1 +R2
SR = 13 V/s
Figure 58. Fast Settling Inverter
Figure 59. Basic Inverting Amplifier
+
MC34071
VO
−
Vin
Vin
R2
+
MC34071
RL
VO
−
R1
VO
Vin
=
1+
R2
R1
BW (−3.0 dB) = GBW
BWp = 200 kHz
VO = 20 Vpp
SR = 10 V/s
R1
R1 +R2
Figure 60. Basic Noninverting Amplifier
Figure 61. Unity Gain Buffer (AV = +1.0)
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MC34071,2,4,A MC33071,2,4,A
+
R
R
MC34074
−
R
−
MC34074
RE
VO
+
R
−
R
MC34074
+
Example:
Let: R = RE = 12 k
Then: AV = 3.0
BW = 1.5 MHz
R
AV = 1 +2
R
RE
Figure 62. High Impedance Differential Amplifier
+VO
+
+
MC34074
100 k
−
10
+
RL
10
+10
−
MC34074
+
220 pF
100 k
−10
+
+
RL
+VO
−VO
∞
18.93
−18.78
10 k
5.0 k
18
15.4
−18
−15.4
+
MC34074
100 k
−
10
RL
10
−VO
Figure 63. Dual Voltage Doubler
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16
MC34071,2,4,A MC33071,2,4,A
ORDERING INFORMATION
Op Amp
Function
Single
Operating
Temperature Range
Package
Shipping†
MC34071P
PDIP−8
50 Units / Rail
MC34071AP
PDIP−8
50 Units / Rail
MC34071D
SOIC−8
98 Units / Rail
Device
MC34071AD
TA = 0° to +70°C
SOIC−8
98 Units / Rail
MC34071DR2
SOIC−8
2500 Units / Tape & Reel
MC34071ADR2
SOIC−8
2500 Units / Tape & Reel
MC34072P
PDIP−8
50 Units / Rail
MC34072PG
PDIP−8
(Pb−Free)
50 Units / Rail
MC34072AP
PDIP−8
50 Units / Rail
MC34072D
SOIC−8
98 Units / Rail
SOIC−8
(Pb−Free)
98 Units / Rail
SOIC−8
98 Units / Rail
MC34072DG
MC34072AD
TA = 0° to +70°C
MC34072DR2
Dual
SOIC−8
2500 Units / Tape & Reel
MC34072DR2G
SOIC−8
(Pb−Free)
2500 Units / Tape & Reel
MC34072ADR2
SOIC−8
2500 Units / Tape & Reel
SOIC−8
(Pb−Free)
2500 Units / Tape & Reel
MC34072ADR2G
MC33072P
PDIP−8
1000 Units / Rail
PDIP−8
(Pb−Free)
1000 Units / Tube
MC33072AP
PDIP−8
50 Units / Rail
MC33072D
SOIC−8
98 Units / Rail
SOIC−8
98 Units / Rail
MC33072PG
MC33072AD
TA = −40°
40° to +85°C
MC33072DR2
SOIC−8
2500 Units / Tape & Reel
MC33072DR2G
SOIC−8
(Pb−Free)
2500 Units / Tape & Reel
MC33072ADR2
SOIC−8
2500 Units / Tape & Reel
MC34072VD
SOIC−8
98 Units / Rail
SOIC−8
2500 Units / Tape & Reel
MC34072VP
PDIP−8
50 Units / Rail
MC34074P
PDIP−14
25 Units / Rail
MC34074AP
PDIP−14
25 Units / Rail
MC34074D
SOIC−14
55 Units / Rail
MC34074AD
SOIC−14
55 Units / Rail
SOIC−14
2500 Units / Tape & Reel
MC34074DR2G
SOIC−14
(Pb−Free)
2500 Units / Tape & Reel
MC34074ADR2
SOIC−14
2500 Units / Tape & Reel
MC33074P
PDIP−14
25 Units / Rail
MC33074AP
PDIP−14
25 Units / Rail
MC33074D, MC33074AD
SOIC−14
55 Units / Rail
MC33074DR2
SOIC−14
2500 Units / Tape & Reel
MC34072VDR2
MC34074DR2
Quad
MC33074ADR2
TA = −40°
0 to
o +125°C
5C
TA = 0° to +70°C
TA = −40° to +85°C
SOIC−14
2500 Units / Tape & Reel
MC33074DTB
TSSOP−14
(Pb−Free)
96 Units / Rail
MC33074ADTB
TSSOP−14
(Pb−Free)
96 Units / Rail
http://onsemi.com
17
MC34071,2,4,A MC33071,2,4,A
Op Amp
Function
Operating
Temperature Range
Package
Shipping†
TSSOP−14
(Pb−Free)
2500 Units / Tape & Reel
TSSOP−14
(Pb−Free)
2500 Units / Tape & Reel
SOIC−14
55 Units / Rail
SOIC−14
(Pb−Free)
55 Units / Rail
MC34074VDR2
SOIC−14
2500 Units / Tape & Reel
MC34074VP
PDIP−14
25 Units / Rail
Device
MC33074DTBR2
40° to +85°C
TA = −40°
MC33074ADTBR2
MC34074VD
Quad
MC34074VDG
TA = −40°
40 to +125°C
+125 C
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
PPDIP−8
P SUFFIX
CASE 626
8
8
MC3x071P
AWL
YYWW
8
MC3x071AP
AWL
YYWW
1
1
8
MC3x072P
AWL
YYWW
1
8
MC3x072AP
AWL
YYWW
MC34072VP
AWL
YYWW
1
1
8
8
SOIC−8
D SUFFIX
CASE 751
8
8
8
3x071
ALYWA
3x071
ALYW
1
1
3x072
ALYWA
3x072
ALYW
3x072
ALYWV
1
1
1
PPDIP−14
P SUFFIX
CASE 646
14
14
14
MC3x074P
AWLYYWW
1
MC34074VP
AWLYYWW
MC3x074AP
AWLYYWW
1
1
SOIC−14
D SUFFIX
CASE 751A
14
14
1
14
14
MC3x074AD
AWLYWW
MC3x074D
AWLYWW
1
TSSOP−14
DTB SUFFIX
CASE 948G
MC33
074
ALYW
MC34074VD
AWLYWW
1
1
x
= 3 or 4
A
= Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
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18
14
MC33
074A
ALYW
1
MC34071,2,4,A MC33071,2,4,A
PACKAGE DIMENSIONS
PDIP−8
P SUFFIX
CASE 626−05
ISSUE L
8
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
5
−B−
1
4
F
−A−
NOTE 2
L
C
J
−T−
N
SEATING
PLANE
D
H
M
K
G
0.13 (0.005)
M
T A
M
B
M
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19
DIM
A
B
C
D
F
G
H
J
K
L
M
N
MILLIMETERS
MIN
MAX
9.40
10.16
6.10
6.60
3.94
4.45
0.38
0.51
1.02
1.78
2.54 BSC
0.76
1.27
0.20
0.30
2.92
3.43
7.62 BSC
−−−
10
0.76
1.01
INCHES
MIN
MAX
0.370
0.400
0.240
0.260
0.155
0.175
0.015
0.020
0.040
0.070
0.100 BSC
0.030
0.050
0.008
0.012
0.115
0.135
0.300 BSC
−−−
10
0.030
0.040
MC34071,2,4,A MC33071,2,4,A
PACKAGE DIMENSIONS
SOIC−8
D SUFFIX
CASE 751−07
ISSUE AB
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
S
B
1
0.25 (0.010)
M
Y
M
4
K
−Y−
G
C
N
X 45 DIM
A
B
C
D
G
H
J
K
M
N
S
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
20
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0
8
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 8 0.010
0.020
0.228
0.244
MC34071,2,4,A MC33071,2,4,A
PACKAGE DIMENSIONS
PDIP−14
P SUFFIX
CASE 646−06
ISSUE M
14
8
1
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
A
F
DIM
A
B
C
D
F
G
H
J
K
L
M
N
L
N
C
−T−
SEATING
PLANE
J
K
H
D 14 PL
G
M
0.13 (0.005)
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.290
0.310
−−−
10
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
18.80
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.37
7.87
−−−
10
0.38
1.01
M
SOIC−14
D SUFFIX
CASE 751A−03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
−A−
14
8
−B−
1
P 7 PL
0.25 (0.010)
7
G
B
M
M
F
R X 45 C
−T−
SEATING
PLANE
D 14 PL
0.25 (0.010)
M
K
M
T B
S
A
S
http://onsemi.com
21
J
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0
7
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337
0.344
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0
7
0.228
0.244
0.010
0.019
MC34071,2,4,A MC33071,2,4,A
PACKAGE DIMENSIONS
TSSOP−14
DTB SUFFIX
CASE 948G−01
ISSUE O
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE −W−.
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
F
7
1
0.15 (0.006) T U
N
S
DETAIL E
K
A
−V−
ÉÉ
ÇÇ
ÇÇ
ÉÉ
K1
J J1
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
G
H
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.50
0.60
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0
8
INCHES
MIN
MAX
0.193
0.200
0.169
0.177
−−−
0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.020
0.024
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0
8
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MC34071/D