ONSEMI MC74VHCT573ADWRG

MC74VHCT573A
Octal D−Type Latch
with 3−State Output
The MC74VHCT573A is an advanced high speed CMOS octal latch
with 3−state output fabricated with silicon gate CMOS technology. It
achieves high speed operation similar to equivalent Bipolar Schottky
TTL while maintaining CMOS low power dissipation.
This 8−bit D−type latch is controlled by a latch enable input and an
output enable input. When the output enable input is high, the eight
outputs are in a high impedance state.
The VHCT inputs are compatible with TTL levels. This device can
be used as a level converter for interfacing 3.3 V to 5.0 V, because it
has full 5.0 V CMOS level output swings.
The VHCT573A input and output (when disabled) structures
provide protection when voltages between 0 V and 5.5 V are applied,
regardless of the supply voltage. These input and output structures
help prevent device destruction caused by supply
voltage−input/output voltage mismatch, battery backup, hot insertion,
etc.
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MARKING
DIAGRAMS
20
1
VHCT573A
AWLYYWWG
SOIC−20WB
SUFFIX DW
CASE 751D
1
Features
•
•
•
•
•
•
•
•
•
•
•
•
20
High Speed: tPD = 7.7 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 4 mA (Max) at TA = 25°C
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
Power Down Protection Provided on Inputs and Outputs
Balanced Propagation Delays
Designed for 4.5 V to 5.5 V Operating Range
Low Noise: VOLP = 1.6 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
Chip Complexity: 234 FETs or 58.5 Equivalent Gates
Pb−Free Packages are Available*
1
VHCT
573A
ALYWG
G
TSSOP−20
SUFFIX DT
CASE 948E
1
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W = Work Week
G or G
= Pb−Free Package
(Note: Microdot may be in either location)
FUNCTION TABLE
INPUTS
OUTPUT
OE
LE
D
Q
L
L
L
H
H
H
L
X
H
L
X
X
H
L
No Change
Z
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
Publication Order Number:
MC74VHCT573A/D
MC74VHCT573A
D0
D1
D2
DATA
INPUTS
D3
D4
D5
D6
D7
LE
OE
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
Q0
OE
1
20
VCC
Q1
D0
2
19
Q0
Q2
D1
3
18
Q1
D2
4
17
Q2
D3
5
16
Q3
D4
6
15
Q4
D5
7
14
Q5
D6
8
13
Q6
D7
9
12
Q7
10
11
LE
Q3
Q4
NONINVERTING
OUTPUTS
Q5
Q6
Q7
11
1
GND
Figure 1. Logic Diagram
Figure 2. Pin Assignment
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MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
– 0.5 to + 7.0
V
Vin
DC Input Voltage
– 0.5 to + 7.0
V
Vout
DC Output Voltage
– 0.5 to + 7.0
– 0.5 to VCC + 0.5
V
IIK
Input Diode Current
− 20
mA
IOK
Output Diode Current (VOUT < GND; VOUT > VCC)
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air,
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Outputs in 3−State
High or Low State
SOIC Package†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating − SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
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RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
DC Supply Voltage
Vin
DC Input Voltage
Vout
DC Output Voltage
TA
Operating Temperature
tr, tf
Input Rise and Fall Time
Outputs in 3−State
High or Low State
VCC =5.0V ±0.5V
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2
Min
Max
Unit
4.5
5.5
V
0
5.5
V
0
0
5.5
VCC
V
− 40
+ 85
_C
0
20
ns/V
MC74VHCT573A
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DC ELECTRICAL CHARACTERISTICS
Test Conditions
TA = 25°C
VCC
V
Min
2.0
Symbol
Parameter
VIH
Minimum High−Level Input Voltage
4.5 to 5.5
VIL
Maximum Low−Level Input Voltage
4.5 to 5.5
VOH
Minimum High−Level Output
Voltage
Vin = VIH or VIL
IOH = − 50mA
4.5
4.4
IOH = − 8mA
4.5
3.94
VOL
Maximum Low−Level Output
Voltage
Vin = VIH or VIL
IOL = 50mA
4.5
IOL = 8mA
Iin
Maximum Input Leakage Current
IOZ
Typ
TA = − 40 to 85°C
Max
Min
Max
2.0
V
0.8
0.8
4.5
Unit
4.4
V
V
3.80
0.0
0.1
0.1
V
4.5
0.36
0.44
Vin = 5.5 V or GND
0 to 5.5
± 0.1
± 1.0
mA
Maximum 3−State Leakage Current
Vin = VIL or VIH
Vout = VCC or GND
5.5
± 0.25
± 2.5
mA
ICC
Maximum Quiescent Supply Current
Vin = VCC or GND
5.5
4.0
40.0
mA
ICCT
Quiescent Supply Current
Per Input: VIN = 3.4V
Other Input: VCC or GND
5.5
1.35
1.50
mA
IOPD
Output Leakage Current
VOUT = 5.5V
0
0.5
5.0
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = 25°C
Symbol
Parameter
Test Conditions
Min
TA = − 40 to 85°C
Typ
Max
Min
Max
Unit
tPLH,
tPHL
Maximum Propagation Delay,
LE to Q
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
7.7
8.5
12.3
13.3
1.0
1.0
13.5
14.5
ns
tPLH,
tPHL
Maximum Propagation Delay,
D to Q
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
5.1
5.9
8.5
9.5
1.0
1.0
9.5
10.5
ns
tPZL,
tPZH
Output Enable Time,
OE to Q
VCC = 5.0 ± 0.5V
RL = 1kW
CL = 15pF
CL = 50pF
6.3
7.1
10.9
11.9
1.0
1.0
12.5
13.5
ns
tPLZ,
tPHZ
Output Disable Time,
OE to Q
VCC = 5.0 ± 0.5V
RL = 1kW
CL = 50pF
8.8
11.2
1.0
12.0
ns
Output to Output Skew
VCC = 5.5 ± 0.5V
(Note 1)
CL = 50pF
1.0
1.0
ns
10
10
pF
tOSLH,
tOSHL
Cin
Maximum Input Capacitance
4
Cout
Maximum 3−State Output Capacitance
(Output in High−Impedance State)
6
pF
Typical @ 25°C, VCC = 5.0V
CPD
25
Power Dissipation Capacitance (Note 2)
pF
1. Parameter guaranteed by design. tOSLH = |tPLHm − tPLHn|, tOSHL = |tPHLm − tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 8 (per latch). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50 pF, VCC = 5.0V)
TA = 25°C
Symbol
Typ
Parameter
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
1.2
1.6
V
VOLV
Quiet Output Minimum Dynamic VOL
−1.2
−1.6
V
VIHD
Minimum High Level Dynamic Input Voltage
2.0
V
VILD
Maximum Low Level Dynamic Input Voltage
0.8
V
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3
MC74VHCT573A
TIMING REQUIREMENTS (Input tr = tf = 3.0ns)
TA = 25°C
Limit
Limit
Unit
Minimum Pulse Width, LE
VCC = 5.0 ±0.5V
6.5
8.5
ns
tsu
Minimum Setup Time, D to LE
VCC = 5.0 ± 0.5V
1.5
1.5
ns
th
Minimum Hold Time, D to LE
VCC = 5.0 ± 0.5V
3.5
3.5
ns
Parameter
Symbol
tw(h)
Test Conditions
Typ
TA = − 40 to 85°C
ORDERING INFORMATION
Package
Shipping †
MC74VHCT573ADW
SOIC−20WB
38 Units / Rail
MC74VHCT573ADWG
SOIC−20WB
(Pb−Free)
38 Units / Rail
MC74VHCT573ADWR2
SOIC−20WB
1000 / Tape & Reel
MC74VHCT573ADWRG
SOIC−20WB
(Pb−Free)
1000 / Tape & Reel
MC74VHCT573ADT
TSSOP−20*
75 Units / Rail
MC74VHCT573ADTG
TSSOP−20*
75 Units / Rail
MC74VHCT573ADTR2
TSSOP−20*
2500 / Tape & Reel
MC74VHCT573ADTRG
TSSOP−20*
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
tw
3V
1.5V
D
tPLH
tPHL
Q
LE
GND
3V
1.5V
GND
tPHL
tPLH
VOH
1.5V
Q
VOL
VOH
1.5V
VOL
Figure 3. Switching Waveform
Figure 4. Switching Waveform
3V
OE
1.5V
tPZL
Q
1.5V
tPZH
Q
1.5V
tPHZ
VALID
GND
tPLZ
D
HIGH
IMPEDANCE
tsu
VOL +0.3V
3V
1.5V
th
GND
3V
LE
VOH −0.3V
1.5V
HIGH
IMPEDANCE
Figure 5. Switching Waveform
Figure 6. Switching Waveform
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4
GND
MC74VHCT573A
TEST POINT
TEST POINT
OUTPUT
1 kW
OUTPUT
DEVICE
UNDER
TEST
DEVICE
UNDER
TEST
C L*
C L*
*Includes all probe and jig capacitance
*Includes all probe and jig capacitance
Figure 7. Test Circuit
D0
Figure 8. Test Circuit
2
D
LE
D1
3
D
LE
D2
4
D
LE
D3
5
D
LE
D4
6
D
LE
D5
7
D
LE
D6
8
D
LE
D7
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
9
D
LE
LE
OE
Q
Q
Q
Q
Q
Q
Q
Q
11
1
Figure 9. Expanded Logic Diagram
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5
19
18
17
16
15
14
13
12
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
MC74VHCT573A
PACKAGE DIMENSIONS
SOIC−20 WB
DW SUFFIX
CASE 751D−05
ISSUE G
20
11
X 45 _
h
1
10
20X
B
B
0.25
M
T A
S
B
S
A
L
H
M
E
0.25
10X
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
q
A
B
M
D
18X
e
A1
SEATING
PLANE
C
T
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6
DIM
A
A1
B
C
D
E
e
H
h
L
q
MILLIMETERS
MIN
MAX
2.35
2.65
0.10
0.25
0.35
0.49
0.23
0.32
12.65
12.95
7.40
7.60
1.27 BSC
10.05
10.55
0.25
0.75
0.50
0.90
0_
7_
MC74VHCT573A
PACKAGE DIMENSIONS
TSSOP−20
D5 SUFFIX
CASE 948E−02
ISSUE B
20X
0.15 (0.006) T U
2X
0.10 (0.004)
S
L/2
20
M
T U
S
V
S
K
K1
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
11
J J1
B
−U−
L
PIN 1
IDENT
SECTION N−N
1
10
0.25 (0.010)
N
0.15 (0.006) T U
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION:
MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH OR GATE BURRS
SHALL NOT EXCEED 0.15 (0.006) PER
SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER
SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN
FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
K REF
S
M
A
−V−
N
F
DETAIL E
−W−
C
D
G
H
DETAIL E
0.100 (0.004)
−T− SEATING
PLANE
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
6.40
6.60
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.27
0.37
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.252
0.260
0.169
0.177
−−− 0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.011
0.015
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
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