SANYO MCH4013_12

MCH4013
Ordering number : ENA1268A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
MCH4013
UHF to X Band Low-Noise Amplifier
and OSC Applications
Features
•
•
•
High cut-off frequency : fT=22.5GHz typ (VCE=3V)
Low operating voltage
High gain
: |S21e|2=16dB typ (f=2GHz)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VEBO
IC
Collector Current
Junction Temperature
Collector Dissipation
PC
Tj
Storage Temperature
Tstg
Unit
10
V
3.5
V
2.5
V
15
mA
50
mW
150
°C
--55 to +150
°C
Product & Package Information
unit : mm (typ)
7020A-002
• Package
: MCPH4
• JEITA, JEDEC
: SC-82, SC-82AB, SOT-343
• Minimum Packing Quantity : 3,000 pcs./reel
2.0
4
3
Packing Type : TL
1
TL
2
0.65
GH
LOT No.
0 to 0.02
Marking
LOT No.
0.25
MCH4013-TL-E
0.15
2.1
1.6
0.25
Package Dimensions
0.3
0.07
0.85
Electrical Connection
1
1
2
4
3
1 : Collector
2 : Emitter
3 : Base
4 : Emitter
SANYO : MCPH4
3
2, 4
http://www.sanyosemi.com/en/network/
91212 TKIM/80608AB TIIM TC-00001509 No. A1268-1/6
MCH4013
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
VCB=5V, IE=0A
VEB=1V, IC=0A
hFE
fT
VCE=1V, IC=5mA
VCE=3V, IC=10mA
VCB=1V, f=1MHz
Forward Transfer Gain
Cre
2
|S21e|
Noise Figure
NF
VCE=1V, IC=2mA, f=2GHz
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Ratings
Conditions
min
typ
70
1.0
μA
1.0
μA
150
17
VCE=3V, IC=10mA, f=2GHz
Unit
max
22.5
12
GHz
0.06
pF
16
dB
1.5
2.0
dB
Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Ordering Information
Device
MCH4013-TL-E
Package
Shipping
memo
MCPH4
3,000pcs./reel
Pb Free
IC -- VCE
15
IC -- VBE
15
60μA
6
30μΑ
3
IB=0μA
0
0
1
2
Collector-to-Emitter Voltage, VCE -- V
6
3
0
3
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
IT13876
hFE -- IC
3
9
3V
90μΑ
9
12
VCE=1V
120μΑ
12
Collector Current, IC -- mA
Collector Current, IC -- mA
150μA
1.2
IT13877
Cre -- VCB
2
Reverse Transfer Capacitance, Cre -- pF
f=1MHz
DC Current Gain, hFE
2
VCE=3V
100
1V
7
5
3
1.0
2
3
5
7
10
Collector Current, IC -- mA
2
3
IT13878
0.1
7
5
3
2
0.1
2
3
5
7
1.0
2
3
5
Collector-to-Base Voltage, VCB -- V
7 10
IT13897
No. A1268-2/6
MCH4013
⏐S21e⏐2 -- IC
20
f T -- IC
7
f=2GHz
Gain-Bandwidth Product, f T -- GHz
18
V
=3
V CE
1V
16
14
12
10
8
1.0
2
3
5
7
10
Collector Current, IC -- mA
3
=3V
VCE
1V
2
10
7
2
3
2.5
2.0
1.5
1.0
7
2
10
3
IT13881
PC -- Ta
60
3.0
5
Collector Current, IC -- mA
IT13880
VCE=1V
f=2GHz
ZS=Zsopt
3.5
0.5
1.0
5
5
1.0
3
NF -- IC
4.0
Noise Figure, NF -- dB
2
Collector Dissipation, PC -- mW
2
Forward Transfer Gain, ⏐S21e⏐ -- dB
f=2GHz
50
40
30
20
10
0
2
3
5
7
10
Collector Current, IC -- mA
2
3
IT13898
0
25
50
75
100
125
150
Ambient Temperature, Ta -- °C
175
IT13883
No. A1268-3/6
MCH4013
Embossed Taping Specification
MCH4013-TL-E
No. A1268-4/6
MCH4013
Outline Drawing
MCH4013-TL-E
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
1.3
No. A1268-5/6
MCH4013
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
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independent device, the customer should always evaluate and test devices mounted in the customer' s
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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mentioned above.
This catalog provides information as of September, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1268-6/6