MCRF355/360 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer Built-in anti-collision algorithm for reading up to multiple tags in the same RF field “Cloaking” feature to minimize the detuning effects of adjacent tags Internal 100 pF resonant capacitor (MCRF360) Read only device in RF field Long read range Rewritable with contact programmer or factoryprogrammed options Very low power CMOS design Die, wafer, bumped wafer, COB, PDIP or SOIC package options PDIP/SOIC 1 8 VDD CLK 2 7 NC Ant. A 3 6 Ant. B NC 4 5 VSS Note: Pins 1, 2, 5 and 8 are for device testing and contact programming. Pins 3, 5 and 6 are for external antenna connection. NC = Not connected MCRF355 COB Application 5 mm Book store and library book ID Airline baggage tracking Toys and gaming tools Access control/asset tracking Applications for reading multiple tags and long read range RF Carrier Ant. A 8 mm • • • • • VPRG Antenna Coil Connection • • • • • • Package Type MCRF355/360 Reader Modulated RF Data Ant. B Vss Read range: ~ up to 1.5 meters depending on tag size and system requirements. Thickness = 0.4 mm 2002 Microchip Technology Inc. DS21287F-page 1 MCRF355/360 Description The MCRF355 and MCRF360 are Microchip’s 13.56 MHz microID™ family of RFID tagging devices. They are uniquely designed read-only passive Radio Frequency Identification (RFID) devices with an advanced anti-collision feature. They are programmable with a contact programmer. The device is powered remotely by rectifying RF magnetic fields that are transmitted from the reader. The device has a total of six pads (see Figure 1-1). Three (ant. A, B, VSS) are used to connect the external resonant circuit elements. The additional three pads (VPRG, CLK, VDD) are used for programming and testing of the device. The device needs an external resonant circuit between antenna A, B, and VSS pads. The resonant frequency of the circuit is determined by the circuit elements between the antenna A and VSS pads. The resonant circuit must be tuned to the carrier frequency of the reader for maximum performance. The circuit element between the antenna B and VSS pads is used for data modulation. See Application Note AN707 for further operational details. The MCRF360 includes a 100 pF internal resonant capacitor (100 pF). By utilizing this internal resonant capacitor, the device needs external coils only for the resonant circuit. Examples of the resonant circuit configuration for both the MCRF355 and MCRF360 are shown in Section 3.0. When a tag (device with the external LC resonant circuit) is brought to the reader’s RF field, it induces an RF voltage across the LC resonant circuit. The device rectifies the RF voltage and develops a DC voltage. The device becomes functional as soon as VDD reaches the operating voltage level. The occurrence of the cloaking and uncloaking of the device is controlled by the modulation signal that turns the modulation transistor on and off, resulting in communication from the device to the reader. The data stream consists of 154 bits of Manchesterencoded data at a 70 kHz rate. The Manchester code waveform is shown in Figure 2-2. After completion of the data transmission, the device goes into SLEEP mode for about 100 ms. The device repeats the transmitting and SLEEP cycles as long as it is energized. During the SLEEP time the device remains in an uncloaked state. SLEEP time is determined by a built-in low-current timer. There is a wide variation of the SLEEP time between each device. This wide variation of SLEEP time results in a randomness of the time slot. Each device wakes up and transmits its data in a different time slot with respect to each other. Based on this scenario, the reader is able to read many tags that are in the same RF field. The device has a total of 154 bits of reprogrammable memory. All bits are reprogrammable by a contact programmer. A contact programmer (part number PG103003) is available from Microchip Technology Inc. Factory programming prior to shipment, known as Serialized Quick Turn ProgrammingSM (SQTPSM), is also available. The device is available in die, wafer, bumped wafer, wafer-on-frame, PDIP, SOIC and COB modules. Note: Information provided herein is preliminary and subject to change without notice. The device includes a modulation transistor that is located between antenna B and VSS pads. The transistor has high turn-off (a few MΩ) and low turn-on (3 Ω) resistance. The turn-on resistance is called modulation resistance (RM). When the transistor turns off, the resonant circuit is tuned to the carrier frequency of the reader. This condition is called uncloaking. When the modulation transistor turns on, its low turn-on resistance shorts the external circuit element between the antenna B and VSS. As a result, the resonant circuit no longer resonates at the carrier frequency. This is called cloaking. The induced voltage amplitude (on the resonant circuit) changes with the modulation data: higher amplitude during uncloaking (tuned), and lower amplitude during cloaking (detuned). This is called “amplitude modulation” signal. The receiver channel in the reader detects this amplitude modulation signal and reconstructs the modulation data. DS21287F-page 2 2002 Microchip Technology Inc. MCRF355/360 1.0 ELECTRICAL CHARACTERISTICS TABLE 1-1: ABSOLUTE RATINGS Parameters Coil Current Assembly temperature Storage temperature TABLE 1-2: Symbol Min Max Units IPP_AC TASM TSTORE Conditions — 40 mA Peak-to-Peak coil current — 265 °C < 10 sec -65 150 °C — DC CHARACTERISTICS All parameters apply across the specified operating ranges, unless otherwise noted. Commercial (C): Parameters TAMB = -20oC to 70oC Symbol Min Typ Max Units Reading voltage VDDR 2.4 — — V Conditions VDD voltage for reading Hysteresis voltage VHYST — TBD — TBD Operating current IDDR — 7 10 µA VDD = 2.4V during reading at 25°C Testing voltage VDDT — 4 — V — Programming voltage: High level input voltage Low level input voltage High voltage VIH VIL VHH 0.7 * VDDT — — — — 20 — 0.3 * VDDT — V V V External DC voltage for programming and testing Current leakage during SLEEP time IDD_OFF — 10 — nA (Note 1) Modulation resistance RM — 3 4 Ω DC resistance between Drain and Source gates of the modulation transistor (when it is turned on) RPDW 5 8 — kΩ CLK and VPRG internal pull-down resistor Pull-Down resistor — Note 1: This parameter is not tested in production. 2002 Microchip Technology Inc. DS21287F-page 3 MCRF355/360 TABLE 1-3: AC CHARACTERISTICS All parameters apply across Commercial (C): TAMB = -20oC to 70oC the specified operating ranges, unless otherwise noted. Parameters Symbol Min Typ Max Units Conditions Carrier frequency FC Modulation frequency FM 58 70 82 kHz Manchester coding, at VDD = 2.6 VDC - 5 VDC VPP_AC 4 — — VPP Peak-to-Peak AC voltage across the coil during reading VCLMP_AC — 32 — VPP Peak-to-Peak coil clamp voltage Coil voltage during reading Coil clamp voltage 13.56 MHz Reader’s transmitting frequency Test mode clock frequency FCLK 115 500 kHz 25°C SLEEP time TOFF 50 100 200 ms Off time for anti-collision feature, at 25°C and VDD = 2.5 VDC Internal resonant capacitor (MCRF360) CRES 85 100 115 pF Internal resonant capacitor between Antenna A and VSS, at 13.56 MHz Write/Erase pulse width Clock high time TWC — 2 10 ms Time to program bit, at 25°C THIGH — 4.4 — µs 25°C for testing and programming TLOW — 4.4 — µs 25°C for testing and programming STOP condition pulse width TPW:STO — 1000 — ns 25°C for testing and programming STOP condition setup time TSU:STO — 200 — ns 25°C for testing and programming Setup time for high voltage TSU:HH — 800 — ns 25°C for testing and programming High voltage delay time TDL:HH — 800 — ns Delay time before the next clock, at 25°C for testing and programming Data input setup time TSU:DAT — 450 — ns 25°C for testing and programming Data input hold time Clock low time THD:DAT — 1.2 — µs 25°C for testing and programming Output valid from clock TAA — 200 — ns 25°C for testing and programming Data retention — 200 DS21287F-page 4 — Years For T < 120°C 2002 Microchip Technology Inc. MCRF355/360 TABLE 1-4: Pad Name PAD COORDINATES (MICRONS) Lower Lower Left X Left Y Upper Right X Passivation Openings Upper Right Y Pad Width Pad Pad Center X Center Y Pad Height Ant. A -610.0 489.2 -521.0 578.2 89 89 -565.5 533.7 Ant. B -605.0 -579.8 -516.0 -490.8 89 89 -560.5 -535.3 VSS -605.0 -58.2 -516.0 30.8 89 89 -560.5 -13.7 VDD 463.4 -181.4 552.4 -92.4 89 89 507.9 -136.9 CLK 463.4 496.8 552.4 585.8 89 89 507.9 541.3 VPRG 463.4 157.6 552.4 246.6 89 89 507.9 202.1 Note 1: All coordinates are referenced from the center of the die. The minimum distance between pads (edge to edge) is 10 mil. 2: Die Size = 1.417 mm x 1.513 mm = 1417 µm x 1513 µm = 55.79 mil x 59.57 mil DIE LAYOUT FIGURE 1-1: Y (Notch edge of wafer) 1162.4 x x Ant A CLK 250.2 x X 250 x 432.6 Ant B VPRG x 1513 VSS 1158 x 767.2 458.4 VDD 1157.4 1417 Die size before saw: Die size after saw: 1417 µm x 1513 µm 1353.8 µm x 1450.34 µm 89 µm x 89 µm 55.79 mil x 59.57 mil 53.3 x 57.1 mil 3.5 mil x 3.5 mil 2002 Microchip Technology Inc. Bond pad size: DS21287F-page 5 MCRF355/360 TABLE 1-5: PAD FUNCTION TABLE Name Ant. A Function Connected to external resonant circuit, (Note 1) Ant. B Connected to external resonant circuit, (Note 1) VSS Connected to external resonant circuit, (Note 1) Device ground during Test mode VDD DC voltage supply for programming and Test mode CLK Main clock pulse for programming and Test mode VPRG Input/Output for programming and Test mode Note 1: See Figure 3-1 for the connection with external resonant circuit. TABLE 1-6: DIE MECHANICAL DIMENSIONS Specifications Min. Typ. Max. Unit Wafer Diameter — 8 — inch Comments Die separation line width — 80 — µm Dice per wafer — 12,000 — die Batch size — 24 — wafer Bond pad opening — — 3.5 x 3.5 89 x 89 — — mil µm (Note 1, Note 2) 7.5 190.5 8 203.2 8.5 215.9 mil µm Sawed 8” wafer on frame (option = WF) (Note 3) 10 254 11 279.4 12 304.8 mil µm • Bumped, sawed 8” wafer on frame (option = WFB) • Unsawed wafer (option = W) • Unsawed 8” bumped wafer (option = WB), (Note 3) Die passivation thickness (multilayer) — 1.3 — µm (Note 4) Die Size: Die size X*Y before saw (step size) Die size X*Y after saw — — 55.79 x 59.57 53.3 x 57.1 — — mil mil — — Die backgrind thickness Note 1: The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at least 0.1 mil. 2: Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu. 3: As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as thick as the application will allow. 4: The Die Passivation thickness (1.3 µm) can vary by device depending on the mask set used. - Layer 1: Oxide (undoped oxide) - Layer 2: PSG (doped oxide) - Layer 3: Oxynitride (top layer) 5: The conversion rate is 25.4 µm/mil. Note: Extreme care is urged in the handling and assembly of die products since they are susceptible to mechanical and electrostatic damage. DS21287F-page 6 2002 Microchip Technology Inc. MCRF355/360 2.0 FUNCTIONAL DESCRIPTION 2.1.3 The device contains three major sections: (1) Analog Front-End, (2) Controller Logic and (3) Memory. Figure 2-1 shows the block diagram of the device. 2.1 Analog Front-End Section This section includes power supply, Power-on Reset, and data modulation circuits. 2.1.1 POWER SUPPLY The power supply circuit generates DC voltage (VDD) by rectifying induced RF coil voltage. The power supply circuit includes high-voltage clamping diodes to prevent excessive voltage development across the antenna coil. 2.1.2 POWER-ON-RESET (POR) This circuit generates a Power-on Reset when the tag first enters the reader field. The RESET releases when sufficient power has developed on the VDD regulator to allow for correct operation. DATA MODULATION The data modulation circuit consists of a modulation transistor and an external LC resonant circuit. The external circuit must be tuned to the carrier frequency of the reader (i.e., 13.56 MHz) for maximum performance. The modulation transistor is placed between antenna B and Vss pads and has small turn-on resistance (RM). This small turn-on resistance shorts the external circuit between the antenna B and Vss pads as it turns on. The transistor turns on during the “Hi” period of the modulation data and turns off during the “Lo” period. When the transistor is turned off, the resonant circuit resonates at the carrier frequency. Therefore, the external circuit develops maximum voltage across it. This condition is called uncloaking (tuned). When the transistor is turned on, its low turn-on resistance shorts the external circuit, and therefore the circuit no longer resonates at the carrier frequency. The voltage across the external circuit is minimized. This condition is called cloaking (detuned). The device transmits data by cloaking and uncloaking based on the on/off condition of the modulation transistor. Therefore, with the 70 kHz - Manchester format, the data bit “0” will be sent by cloaking (detuned) and uncloaking (tuned) the device for 7 µs each. Similarly, the data bit “1” will be sent by uncloaking (tuned) and cloaking (detuned) the device for 7 µs each. See Figure 2-2 for the Manchester waveform. FIGURE 2-1: BLOCK DIAGRAM ANALOG FRONT-END SECTION Power Supply VDD Power-on Reset POR CONTROLLER LOGIC SECTION Column and Row Decoders Clock Generator Modulation Logic Modulation Modulation Pulse MEMORY SECTION Address CLK Pulse Column Drivers (High Voltage Circuit) Data SLEEP Timer (anti-collision) Wake-up Signal Read/Write Logic Set/Clear 154-Bit Memory Array Test Logic VPRG and CLK 2002 Microchip Technology Inc. DS21287F-page 7 MCRF355/360 2.2 2.2.3 Controller Logic Section 2.2.1 This circuit generates a SLEEP time (100 ms ± 50%) for the anti-collision feature. During this SLEEP time (TOFF), the modulation transistor remains in a turnedon condition (cloaked) which detunes the LC resonant circuit. CLOCK PULSE GENERATOR This circuit generates a clock pulse (CLK). The clock pulse is generated by an on-board time-base oscillator. The clock pulse is used for baud rate timing, data modulation rate, etc. 2.2.2 2.2.4 MODULATION LOGIC CODE WAVEFORMS DESCRIPTION WAVEFORM SIGNAL Data READ/WRITE LOGIC This logic controls the reading and programming of the memory array. This logic acts upon the serial data (154 bits) being read from the memory array. The data is then encoded into Manchester format. The encoded data is then fed to the modulation transistor in the Analog Front-End section. The Manchester code waveform is shown in Figure 2-2. FIGURE 2-2: SLEEP TIMER 1 0 1 1 0 0 0 1 1 0 1 0 Digital Data Internal Clock Signal CLK BIPHASE-L (Manchester) NRZ-L (Reference only) Biphase – Level (Split Phase) A level change occurs at middle of every bit clock period. “1” is represented by a high to low level change at midclock. “0” is represented by a low to high level change at midclock. Non-Return to Zero – Level “1” is represented by logic high level. “0” is represented by logic low level. Note: The CLK and NRZ-L signals are shown for reference only. BIPHASE-L (Manchester) is the device output. DS21287F-page 8 2002 Microchip Technology Inc. MCRF355/360 3.0 RESONANT CIRCUIT capacitor that is connected across the two inductors form a parallel resonant circuit to pick up incoming RF signals and also to send modulated signals to the reader. The first coil (L1) is connected between antenna A and B pads. The second coil (L2) is connected between antenna B and VSS pads. The capacitor is connected between antenna A and VSS pads. The MCRF355 requires external coils and capacitor in order to resonate at the carrier frequency of the reader. About one-fourth of the turns of the coil should be connected between antenna B and VSS; remaining turns should be connected between antenna A and B pads. The MCRF360 includes a 100 pF internal resonant capacitor. Therefore, the device needs only external coils for the resonant circuit. For example, the device needs 1.377 µH of inductance for the carrier frequency = 13.56 MHz. Figure 3-1(b) shows the resonant circuit formed by two capacitors (C1 and C2) and one inductor. Figure 3-1(c) shows a configuration of an external circuit for the MCRF360. By utilizing the 100 pF internal resonant capacitor, only L1 and L2 are needed for the external circuit. Figures 3-1 (a) and (b) show possible configurations of the external circuits for the MCRF355. In Figure 3-1 (a), two external antenna coils (L1 and L2) in series and a FIGURE 3-1: CONFIGURATION OF EXTERNAL RESONANT CIRCUITS 1 f 0 = -----------------------2π CL T Ant. A RF Carrier Where: Interrogator C L1 MCRF355 Ant. B L2 Modulated RF Data LT = L1 + L2 + 2LM = Mutual inductance between L1 and L2 LM VSS L1 > L2 (a) Ant. A RF Carrier 1 f 0 = -------------------------------------------C1C2 2π L ---------------------- C1 + C2 C1 L Interrogator MCRF355 Ant. B C2 Modulated RF Data VSS C1 ≥ C2 (b) 1 f 0 = ----------------------------------------------------------– 12 ) 2π ( L T ) ( 100 x 10 Ant. A RF Carrier L1 100 pF Interrogator Ant. B Modulated RF Data MCRF360 Where: LT L2 VSS LM = L1 + L2 + 2LM = Mutual inductance between L1 and L2 L1 > L2 (c) 2002 Microchip Technology Inc. DS21287F-page 9 MCRF355/360 4.0 DEVICE PROGRAMMING 3. MCRF355/360 is a reprogrammable device in Contact mode. The device has 154 bits of reprogrammable memory. It can be programmed in the following procedure. (A programmer, part number PG103003, is also available from Microchip). 4. 4.1 6. 5. Programming Logic Programming logic is enabled by applying power to the device and clocking the device via the CLK pad while loading the mode code via the VPRG pad (See Examples 4-1 through 4-4 for test definitions). Both the CLK and the VPRG pads have internal pull-down resistors. 4.2 The above mode function (3.2.2) will be executed when the last bit of code is entered. Power the device off (VDD = VSS) to exit Programming mode. An alternative method to exit the Programming mode is to bring CLK logic “High” before VPRG to VHH (high voltage). Any Programming mode can be entered after exiting the current function. 4.4 Programming Mode 1. Erase EE Code: 0111010100 2. Program EE Code: 0111010010 3. Read EE Code: 0111010110 Note: Pin Configuration ‘0’ means logic “Low” (VIL) and ‘1’ means logic “High” (VIH). Connect antenna A, B and VSS pads to ground. 4.3 1. 2. 4.5 Pin Timing Examples 4-1 through 4-4 show the timing sequence for programming and reading of the device. Apply VDDT voltage to VDD. Leave VSS, CLK and VPRG at ground. Load mode code into the VPRG pad. The VPRG is sampled at CLK low to high edge. EXAMPLE 4-1: Signal Timing PROGRAMMING MODE 1: ERASE EE CLK Number: 1 2 3 4 5 6 7 8 9 10 12 11 CLK VHH VPRG: VIH VIL TWC Note: Erases entire array to a ‘1’ state between CLK 11 and 12. EXAMPLE 4-2: PROGRAMMING MODE 2: PROGRAM EE CLK Number: 1 2 … 5 6 7 8 9 10 11 … 165 CLK: Pulse high to program bit to “0” VHH… VPRG: VIL VIH Leave low to leave bit at “1” TWC TWC Program bit #0 … Program bit #153 Note: Pulsing VPRG to VHH for the bit programming time while holding the CLK low programs the bit to a ‘0’. DS21287F-page 10 2002 Microchip Technology Inc. MCRF355/360 EXAMPLE 4-3: PROGRAMMING MODE 3: READ EE CLK Number: 1 2 5 6 7 8 9 10 11 12 165 CLK: VPRG: VIH… VIL Turn off programmer drive during CLK high so MCRF355 can drive VPRG. EXAMPLE 4-4: bit #0 bit #1 data data ... bit #153 data TIMING DATA THIGH TLOW CLK: TPW:STO THD:DAT VHH VPRG: VIH VIL TAA TSU:STO TSU:DAT TWC VHH VPRG: (Reading) VIH… TSU:HH TDL:HH VIL 2002 Microchip Technology Inc. DS21287F-page 11 MCRF355/360 5.0 FAILED DIE IDENTIFICATION Every die on the wafer is electrically tested according to the data sheet specifications and visually inspected to detect any mechanical damage, such as mechanical cracks and scratches. Any failed die in the test or visual inspection is identified by black colored ink. Therefore, any die covered with black ink should not be used. The ink dot specification: • Ink dot size: 254 µm in circular diameter • Position: central third of die • Color: black 6.0 WAFER DELIVERY DOCUMENTATION The wafer is shipped with the following information: • • • • • • Microchip Technology Inc. MP Code Lot Number Total number of wafers in the container Total number of good dice in the container Average die per wafer (DPW) Scribe number of wafers with number of good dice 7.0 The device is very susceptible to Electro-Static Discharge (ESD), which can cause a critical damage to the device. Special attention is needed during the handling process. Any ultraviolet (UV) light can erase the memory cell contents of an unpackaged device. Fluorescent lights and sunlight can also erase the memory cell, although it takes more time than UV lamps. Therefore, keep any unpackaged device out of UV light and also avoid direct exposure of strong fluorescent lights and shining sunlight. Certain IC manufacturing, COB and tag assembly operations may use UV light. Operations such as backgrind de-tape, certain cleaning procedures, epoxy or glue cure should be done without exposing the die surface to UV light. Using X-ray for die inspection will not harm the die, nor erase memory cell contents. 8.0 REFERENCES It is recommended that the reader reference the following documents. 1. 2. 3. 4. 5. DS21287F-page 12 NOTICE ON DIE AND WAFER HANDLING “Antenna Circuit Design for RFID Applications”, AN710, DS00710. “RFID Tag and COB Development Guide with Microchip’s RFID Devices”, AN830, DS00830. “MCRF355/360 Application Note: Mode of Operation and External Resonance Circuit”, AN707, DS00707. “Microchip Development Kit Sample Format for the MCRF355/360 Devices”, TB031, DS91031. “MCRF355/360 Reader Reference Design”, DS21311. 2002 Microchip Technology Inc. MCRF355/360 PACKAGING INFORMATION 8.1 Package Marking Information 8-Lead PDIP (300 mil) MCRF355 XXXXXNNN 0025 XXXXXXXX XXXXXNNN YYWW 8-Lead SOIC (150 mil) XXXXXXXX XXXXYYWW NNN Legend: Note: * XX...X Y YY WW NNN Example: Example: MCRF355 XXX0025 NNN Customer specific information* Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. Standard device marking consists of Microchip part number, year code, week code, and traceability code. 2002 Microchip Technology Inc. DS21287F-page 13 MCRF355/360 MCRF355 COB Detail X 4.23 5.00 1.06 X ∅2.00 R0.20 R1.30 31.84 Y 0.80(2X) 35.00 9.65 0.60(4X) 5.10 6.88 6.27 5.21 1.42 9.65 9.65 0.40 (max.) R0.16 (2X) 0.60(2X) 1.58 1.42 1.50 9.50 1.85 9.50 0.40 8.00 1.53(4X) 9.50 4.75 9.65 9.65 4.90 5.90 0.30 (ref.) 2.52 3.75 Note 2 R0.20(4X) DS21287F-page 14 1.94 5.60 4.75 3.88 Note: 1. Reject hole by device testing 2. Top gate mark (Option) 3. Total package thickness excludes punching burr 2.375 2002 Microchip Technology Inc. MCRF355/360 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A2 A L c A1 β B1 p eB UNITS DIMENSION LIMITS Number of Pins Pitch Top to Seating Plane Molded Package Thickness Base to Seating Plane Shoulder to Shoulder Width Molded Package Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing § Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic B MIN n p A A2 A1 E E1 D L c B1 B eB α β .140 .115 .015 .300 .240 .360 .125 .008 .045 .014 .310 5 5 INCHES* NOM 8 .100 .155 .130 .313 .250 .373 .130 .012 .058 .018 .370 10 10 MAX .170 .145 .325 .260 .385 .135 .015 .070 .022 .430 15 15 MILLIMETERS NOM 8 2.54 3.56 3.94 2.92 3.30 0.38 7.62 7.94 6.10 6.35 9.14 9.46 3.18 3.30 0.20 0.29 1.14 1.46 0.36 0.46 7.87 9.40 10 5 10 5 MIN MAX 4.32 3.68 8.26 6.60 9.78 3.43 0.38 1.78 0.56 10.92 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018 2002 Microchip Technology Inc. DS21287F-page 15 MCRF355/360 8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC) E E1 p D 2 B n 1 h 45° α c A2 A φ β UNITS DIMENSION LIMITS Number of Pins Pitch Overall Height Molded Package Thickness Standoff § Overall Width Molded Package Width Overall Length Chamfer Distance Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter § Significant Characteristic L MIN n p A A2 A1 E E1 D h L φ c B α β .053 .052 .004 .228 .146 .189 .010 .019 0 .008 .013 0 0 A1 INCHES* NOM 8 .050 .061 .056 .007 .237 .154 .193 .015 .025 4 .009 .017 12 12 MAX .069 .061 .010 .244 .157 .197 .020 .030 8 .010 .020 15 15 MILLIMETERS NOM 8 1.27 1.35 1.55 1.32 1.42 .10 .18 5.79 6.02 3.71 3.91 4.80 4.90 .25 .38 .48 .62 0 4 .20 .23 .33 .42 0 12 0 12 MIN MAX 1.75 1.55 .25 6.20 3.99 5.00 .51 .76 8 .25 .51 15 15 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 DS21287F-page 16 2002 Microchip Technology Inc. MCRF355/360 ON-LINE SUPPORT Microchip provides on-line support on the Microchip World Wide Web site. The web site is used by Microchip as a means to make files and information easily available to customers. To view the site, the user must have access to the Internet and a web browser, such as Netscape® or Microsoft® Internet Explorer. Files are also available for FTP download from our FTP site. Connecting to the Microchip Internet Web Site SYSTEMS INFORMATION AND UPGRADE HOT LINE The Systems Information and Upgrade Line provides system users a listing of the latest versions of all of Microchip's development systems software products. Plus, this line provides information on how customers can receive the most current upgrade kits.The Hot Line Numbers are: 1-800-755-2345 for U.S. and most of Canada, and 1-480-792-7302 for the rest of the world. The Microchip web site is available at the following URL: www.microchip.com 092002 The file transfer site is available by using an FTP service to connect to: ftp://ftp.microchip.com The web site and file transfer site provide a variety of services. Users may download files for the latest Development Tools, Data Sheets, Application Notes, User's Guides, Articles and Sample Programs. A variety of Microchip specific business information is also available, including listings of Microchip sales offices, distributors and factory representatives. Other data available for consideration is: • Latest Microchip Press Releases • Technical Support Section with Frequently Asked Questions • Design Tips • Device Errata • Job Postings • Microchip Consultant Program Member Listing • Links to other useful web sites related to Microchip Products • Conferences for products, Development Systems, technical information and more • Listing of seminars and events 2002 Microchip Technology Inc. DS21287F-page 17 MCRF355/360 READER RESPONSE It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150. Please list the following information, and use this outline to provide us with your comments about this document. To: Technical Publications Manager RE: Reader Response Total Pages Sent ________ From: Name Company Address City / State / ZIP / Country Telephone: (_______) _________ - _________ FAX: (______) _________ - _________ Application (optional): Would you like a reply? Device: MCRF355/360 Y N Literature Number: DS21287F Questions: 1. What are the best features of this document? 2. How does this document meet your hardware and software development needs? 3. Do you find the organization of this document easy to follow? If not, why? 4. What additions to the document do you think would enhance the structure and subject? 5. What deletions from the document could be made without affecting the overall usefulness? 6. Is there any incorrect or misleading information (what and where)? 7. How would you improve this document? DS21287F-page 18 2002 Microchip Technology Inc. MCRF355/360 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X Device Device: Package MCRF355 MCRF355/6C = 13.56 MHz Anti-Collision device. = MCRF355 Cross Technology World II COB module with dual 68 pF capacitors MCRF355/7M = MCRF355 IST I0A2 COB module with dual 68 pF capacitors MCRF355/7M: = MCRF355 COB module with dual 68 pF capacitors. MCRF360 = 13.56 MHz Anti-Collision device with 100 pF on-chip resonance capacitor. Temperature Range: Package: Temperature Range /XXX = Examples: a) MCRF355/W: b) MCRF355/WF: = 8-mil wafer on frame. = 11-mil wafer. c) MCRF355/P: a) MCRF360/WFB:= Bumped 8-mil wafer on frame b) MCRF360/SB: = Bumped 8-mil die. c) MCRF360/SN: = SOIC package. = PDIP package. -20°C to +70°C W WB WF WFB = = = = P S SB SN = = = = Wafer (11 mil backgrind) Bumped wafer (8 mil backgrind) Sawed wafer on frame (8 mil backgrind) Bumped, sawed wafer on frame (8 mil backgrind) Plastic PDIP (300 mil Body) 8-lead Dice in waffle pack (8 mil) Bumped die in waffle pack (8 mil) Plastic SOIC (150 mil Body) 8-lead Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2002 Microchip Technology Inc. DS21287F-page 19 MCRF355/360 NOTES: DS21287F-page 20 2002 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, KEELOQ, MPLAB, PIC, PICmicro, PICSTART and PRO MATE are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified. 2002 Microchip Technology Inc. DS21287F - page 21 WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC Japan Corporate Office Australia 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Rocky Mountain China - Beijing 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-4338 Atlanta 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 Kokomo 2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 China - Shenzhen Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-82350361 Fax: 86-755-82366086 China - Hong Kong SAR Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan Microchip Technology (Barbados) Inc., Taiwan Branch 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 EUROPE Austria Microchip Technology Austria GmbH Durisolstrasse 2 A-4600 Wels Austria Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 France Microchip Technology SARL Parc d’Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany Microchip Technology GmbH Steinheilstrasse 10 D-85737 Ismaning, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 10/18/02 DS21287F-page 22 2002 Microchip Technology Inc. This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.