MOTOROLA MJD243-1

Order this document
by MJD243/D
SEMICONDUCTOR TECHNICAL DATA
DPAK For Surface Mount Applications
*Motorola Preferred Device
. . . designed for low voltage, low–power, high–gain audio amplifier applications.
• Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc
= 15 (Min) @ IC = 1.0 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (“–1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.6 Vdc (Max) @ IC = 1.0 Adc
• High Current–Gain — Bandwidth Product — fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage — ICBO = 100 nAdc @ Rated VCB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
NPN SILICON
POWER TRANSISTOR
4 AMPERES
100 VOLTS
12.5 WATTS
MAXIMUM RATINGS
Symbol
Value
Unit
VCB
VCEO
VEB
100
Vdc
100
Vdc
7
Vdc
Collector Current — Continuous
Peak
IC
4
8
Adc
Base Current
IB
PD
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
1
Adc
12.5
0.1
Watts
W/_C
PD
1.4
0.011
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
RθJC
RθJA
10
89.3
_C/W
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Total Device Dissipation @ TA = 25_C*
Derate above 25_C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Junction to Ambient*
CASE 369A–13
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.190
4.826
Rating
0.165
4.191
* When surface mounted on minimum pad sizes recommended.
0.07
1.8
0.118
3.0
2 20
1.5 15
0.063
1.6
TA (SURFACE MOUNT)
1 10
0.243
6.172
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
TC
0.5
5
0
0
25
50
75
100
125
inches
mm
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJD243
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
[
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
100
—
Vdc
Collector Cutoff Current (VCB = 100 Vdc, IE = 0)
Collector Cutoff Current (VCB = 100 Vdc, IE = 0, TJ = 125_C)
ICBO
—
—
100
100
nAdc
µAdc
Emitter Cutoff Current (VBE = 7 Vdc, IC = 0)
IEBO
—
100
nAdc
DC Current Gain (1) (IC = 200 mAdc, VCE = 1 Vdc)
DC Current Gain (1) (IC = 1 Adc, VCE = 1 Vdc)
hFE
40
15
180
—
—
—
—
0.3
0.6
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0)
Collector–Emitter Saturation Voltage (1)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1 Adc, IB = 100 mAdc)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage (1) (IC = 2 Adc, IB = 200 mAdc)
VBE(sat)
—
1.8
Vdc
Base–Emitter On Voltage (1) (IC = 500 mAdc, VCE = 1 Vdc)
VBE(on)
—
1.5
Vdc
fT
40
—
MHz
Cob
—
50
pF
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
(2) fT = hFE• ftest.
IC, COLLECTOR CURRENT (AMPS)
10
2%.
500 µs
5
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150_C. T J(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 µs
2
1 ms
1
5 ms
0.5
0.2
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
0.1
0.05
0.02
0.01
dc
1
v
2
5
10
20
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 2. Active Region Maximum Safe
Operating Area
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.02
RθJC(t) = r(t) θJC
RθJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.05
0.02
0.01
0 (SINGLE PULSE)
0.05
0.1
0.2
0.5
1
2
t, TIME (ms)
5
10
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
20
50
100
Figure 3. Thermal Response
2
Motorola Bipolar Power Transistor Device Data
200
MJD243
1.4
300
200
TJ = 150°C
TJ = 25°C
VCE = 1 V
VCE = 2 V
1.2
25°C
100
70
50
– 55°C
30
20
10
7
5
0.04 0.06
1
V, VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
500
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 1 V
0.4
0.2
0.1
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
2
IC/IB = 10
5
VCE(sat)
0
0.04 0.06
4
0.1
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 4. DC Current Gain
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
VCC
+ 30 V
*APPLIES FOR IC/IB ≤ hFE/3
25 µs
+ 1.5
0
–9 V
– 55°C to 25°C
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
– 0.5
–1
–2
SCOPE
RB
25°C to 150°C
∗θVC FOR VCE(sat)
0
– 1.5
RC
+11 V
+1
+ 0.5
4
Figure 5. “On” Voltages
+ 2.5
+2
2
D1
51
–4 V
25°C to 150°C
θVB FOR VBE
– 2.5
0.04 0.06
0.1
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
FOR PNP TEST CIRCUIT,
1N5825 USED ABOVE IB ≈ 100 mA
REVERSE ALL POLARITIES
MSD6100 USED BELOW IB ≈ 100 mA
– 55°C to 25°C
0.2
0.4
0.6
1
2
4
IC, COLLECTOR CURRENT (AMP)
Figure 6. Temperature Coefficients
Figure 7. Switching Time Test Circuit
500
2000
TJ = 25°C
VCC = 30 V
IC/IB = 10
100
70
50
700
500
tr
30
20
0.1
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
Figure 8. Turn–On Time
Motorola Bipolar Power Transistor Device Data
2
ts
300
200
100
70
50
td @ VBE(off) = 5 V
10
7
5
0.04 0.06
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
1000
t, TIME (ns)
t, TIME (ns)
300
200
4
30
20
0.04 0.06
tf
0.1
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
2
4
Figure 9. Turn–Off Time
3
MJD243
200
C, CAPACITANCE (pF)
TJ = 25°C
100
Cib
70
50
30
20
10
Cob
1
2
5
7 10
20 30
3
VR, REVERSE VOLTAGE (VOLTS)
50
70 100
Figure 10. Capacitance
4
Motorola Bipolar Power Transistor Device Data
MJD243
PACKAGE DIMENSIONS
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
–T–
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
–––
0.030
0.050
0.138
–––
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
–––
0.77
1.27
3.51
–––
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369A–13
ISSUE W
C
B
V
E
R
4
A
1
2
3
S
–T–
K
SEATING
PLANE
J
F
H
D
G
3 PL
0.13 (0.005)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.090 BSC
0.034
0.040
0.018
0.023
0.350
0.380
0.175
0.215
0.050
0.090
0.030
0.050
STYLE 1:
PIN 1.
2.
3.
4.
T
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.46
1.27
2.28
0.77
1.27
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369–07
ISSUE K
Motorola Bipolar Power Transistor Device Data
5
MJD243
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
◊
Motorola Bipolar Power Transistor Device Data
*MJD243/D*
MJD243/D