CHENMKO ENTERPRISE CO.,LTD MMBD914PT SURFACE MOUNT SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 (1.70) CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * 2D CIRCUIT (2) (2) .103 (2.64) .086 (2.20) .045 (1.15) .033 (0.85) (1) Dimensions in millimeters (3) .028 (0.70) .020 (0.50) .007 (0.177) .055 (1.40) .047 (1.20) (3) .002 (0.05) * Maximum total power disspation is 225mW. * Peak forward current is 450mA. .019 (0.50) .041 (1.05) .033 (0.85) * Small surface mounting type. (SOT-23) * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density. .018 (0.30) FEATURE SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL MMBD914PT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 100 Volts Maximum RMS Voltage VRMS 70 Volts Maximum DC Blocking Voltage VDC 75 Volts IO 0.2 Amps Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. IFSM 2.0 Amps Typical Junction Capacitance between Terminal (Note 1) CJ 4.0 pF Maximum Reverse Recovery Time (Note 2) TRR 4.0 nSec TJ +150 o C -55 to +150 o C Maximum Operating Temperature Range Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MMBD914PT UNITS Maximum Instantaneous Forward Voltage at IF= 10mA CHARACTERISTICS VF 1.0 Volts Maximum Average Reverse Current at VR= 75V IR 2.5 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 10mA and reverse voltage of 6.0 volts. 3. ESD sensitive product handling required. 2002-5 RATING CHARACTERISTIC CURVES ( MMBD914PT ) FIG. 2 - FORWARD CHARACTERISiTICS 1.0 -25 o C 100u 25 o C 75 o C 25 1m o 50 10m C 75 100m 5 100 12 FORWARD CURRENT, (A) AVERAGE FORWARD CURRENT, (%) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURRENT 125 10u 0 25 0 50 75 100 125 150 0 0.2 0.4 AMBIENT TEMPERATURE, (oC) 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) FIG. 3 - REVERSE CHARACTERISTICS FIG. 4 - TYPICAL JUNCTION CAPACITANCE REVERSE CURRENT, (nA) Ta= 100oC 75oC 100 50oC 10 25oC 0oC 1 - 25oC 0.1 0.01 JUNCTION CAPACITANCE, (pF) 1000 f=1MHz 4 2 0 0 20 40 60 80 100 0 2 4 REVERSE VOLTAGE, (V) 8 10 12 14 16 18 FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT FIG. 5 - REVERSE RECOVERY TIME 10 REVERSE RECOVERY TIME, (nS) 6 REVERSE VOLTAGE, (V) 0.01µF D.U.T. VR=6V 9 8 5 7 PULSE GENERATOR OUTPUT 50 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 FORWARD CURRENT, (mA) 8 9 10 50 SAMPLING OSCILLOSCOPE 20