MPLUSE MP4T636500

Low OperatingVoltage, High fT
Bipolar Microwave Transistors
MP4T6365
V2.00
Features
•Designed for Battery Operation
•fT to 10 GHz
•Low Voltage Oscillator and Amplifier
•Low Phase Noise and Noise Figure
•Hermetic and Surface Mount Packages and
Chips Av ailable
•Can be Screened to JANTX, JANTXV Equiv alent Lev els
Description
The MP4T6365 family of low v oltage, high gain bandwidth silicon NPN bipolar transistors prov ides low noise
figure and high gain at low bias v oltages. These transistors are especially attractiv e for low operating v oltage
low noise amplifiers or driv er amplifiers at frequencies
to 4 GHz. They are also useful for low phase noise local
oscillators and VCOs in battery operated equipment to
10 GHz.
Case Styles
SOT-23
SOT-143
The MP4T6365 family was designed to hav e low noise
figure at operating v oltages as low as 3 v olts. These
transistors also exhibit low phase noise in VCOs
operating at 5 v olts or less.
Because this transistor family was specifically designed
to perate from low bias v oltage, it has superior phase
noise in comparison to similar current bipolar transistors
with higher collector breakdown v oltage when operating
under the same low v oltage conditions.
Chip
The MP4T6365 series transistors are av ailable in
hermetic Micro-X packages, the SOT-23, the SOT-143,
and in chip form (MP4T636500). Other stripline and
hermetic packages are av ailable.
The chip and
hermetic packages can be screened to JANTX, JANTXV
equiv alent lev els. The plastic parts can be supplied on
tape and reel.
All of M-Pulse’s silicon bipolar transistor families use
silicon dioxide and silicon nitride passiv ation to assure
low 1/F noise for amplifier and oscillator applications.
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
1
Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365 Series
V2.00
Maximum Ratings (TA = 25°C)
MP4T6365 Series
Collector-Base Voltage
VCBO
10 V
Collector-Emitter Voltage
VCE
6V
Emitter-Base Voltage
VEB
1.5 V
Collector Current
IC
65 mA
Junction Operating Temperature
Tj
200°C
Storage Temperature
Chip or Ceramic Packages
Plastic Packages
TS
-65°C to +200°C
-65°C to +125°C
Maximum Dissipation
@ 25°C
Maximum Operating
Temperature
Chip (MP4T636500)
400 mW
175°C
SOT-23 (MP4T636533)
200 mW
125°C
Micro-X Package (MP4T636535)
300 mW
150°C
SOT-143 (MP4T636539)
225 mW
125°C
Power Dissipation
Package Type
Electrical Specifications @ 25°C
MP4T6365 Series
Parameter of Test
Condition
MP4T636500
MP4T636535
MP4T636539
MP4T636533
Symbol
Units
Chip
Micro-X
SOT-143
SOT-23
10 typ
10 typ
10 typ
10 typ
14 typ
7.0 min
13 typ
7.0 min
13 typ
7.0 min
13 typ
7.0 min
1.3 typ
1.6 typ
1.3 typ
1.6 typ
1.4 typ
1.7 typ
1.4 typ
1.7 typ
15 typ
10 typ
15 typ
10 typ
14 typ
9 typ
14 typ
9 typ
16 typ
12 typ
16 typ
11 typ
16 typ
10 typ
16 typ
10 typ
16 typ
12 typ
17 typ
13 typ
16 typ
12 typ
16 typ
12 typ
Gain Bandwidth Product
VCE = 3 V
I C = 20 mA
fT
GHz
Insertion Power Gain
VCE = 3 V
I C = 10 mA
f = 1 GHz
f = 2 GHz
|S21E|2
dB
VCE = 3 V
I C = 5 mA
f = 1 GHz
f = 2 GHz
NF
VCE = 3 V
I C = 5 mA
f = 1 GHz
f = 2 GHz
GTU (max)
VCE = 3 V
I C = 20 mA
f = 1 GHz
f = 2 GHz
MAG
VCE = 3 V
I C = 20 mA
f = 2 GHz
f = 4 GHz
P1dB
Noise Figure
Unilateral Gain
Maximum Available Gain
Output Power at 1 dB
Compression
dB
dB
dB
dBm
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
2
Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365 Series
V2.00
Electrical Specifications @ 25°C
Parameter
Condition
Symbol
Min
Typical
Max
Units
Collector Cut-off Current
VCB = 3 volts
I E = 0 µA
I CBO


100
µA
Emitter Cut-off Current
VEB = 1 volt
I C = 0 µA
I EBO


1
µA
Forward Current Gain
VCE = 3 volts
I C = 5 mA
hFE
30
75
200

Collector-Base
Junction Capacitance
VCB = 5 volts
I E = 0 µA
f = 1 MHz
COB

0.50
0.70
pF
Typical Common Emitter Scattering Parameters in the MIcro-X Package
MP4T636535, VCE = 3 Volts, IC = 5 mA
Frequency
(MHz)
Mag.
S11E
Angle
Mag.
S21E
Angle
Mag.
S12E
Angle
Mag
S22E
Angle
500
1000
0.640
0.580
-103
-153
6.343
3.984
116.9
91.5
0.103
0.123
38.7
29.0
0.534
0.346
-75.2
-103.0
1500
0.571
-175
2.813
77.9
0.135
27.7
0.250
-124.9
2000
0.590
168
2.214
67.0
0.146
26.8
0.242
-140.4
2500
0.597
155
1.853
57.9
0.159
27.3
0.211
-150.2
3000
0.622
144
1.632
48.2
0.174
27.3
0.227
-164.1
3500
0.646
134
1.460
40.1
0.190
26.8
0.229
-168.0
4000
0.676
124
1.341
31.7
0.205
25.6
0.238
170.7
4500
0.712
115
1.241
23.7
0.218
24.1
0.255
167.9
5000
0.750
106
1.191
16.4
0.238
22.2
0.277
157.8
5500
0.793
96
1.130
8.4
0.257
20.2
0.310
153.0
6000
0.833
88
1.081
2.5
0.272
17.3
0.323
145.0
MP4T636535, VCE = 3 Volts, IC = 10 mA
Frequency
(MHz)
Mag.
S11E
Angle
Mag.
S21E
Angle
Mag.
S12E
Angle
Mag
S22E
Angle
500
1000
0.580
0.589
-142
-175
8.562
4.641
104.6
85.8
0.066
0.086
39.1
40.5
0.389
0.274
-102.8
-132.0
1500
0.592
170
3.200
75.1
0.106
42.9
0.228
-158.1
2000
0.617
157
2.480
65.9
0.125
43.0
0.243
-169.4
2500
0.625
146
2.069
57.9
0.150
42.7
0.220
171.9
3000
0.652
136
1.811
48.9
0.172
40.8
0.250
166.9
3500
0.676
127
1.613
41.3
0.195
38.3
0.251
161.4
4000
0.707
118
1.479
33.3
0.218
35.1
0.270
150.2
4500
0.741
109
1.366
25.6
0.234
31.9
0.281
146.1
5000
0.776
100
1.311
18.5
0.259
28.1
0.311
135.9
5500
0.817
91
1.240
10.6
0.281
24.9
0.342
132.5
6000
0.855
82
1.118
3.0
0.298
20.5
0.351
125.1
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
3
Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365 Series
V2.00
Typical Common Emitter Scattering Parameters in the MIcro-X Package (Cont’d)
MP4T636535, VCE = 3 Volts, IC = 20 mA
Frequency
(MHz)
Mag.
S11E
Angle
Mag.
S21E
Angle
Mag.
S12E
Angle
Mag
S22E
Angle
500
1000
0.551
0.567
-160
177
9.374
4.916
99.1
84.2
0.048
0.071
46.7
52.5
0.321
0.238
-111.2
-139.5
1500
0.577
164
3.373
74.7
0.094
54.2
0.217
-161.0
2000
0.599
153
2.613
66.4
0.117
53.2
0.223
-171.4
2500
0.611
143
2.174
58.9
0.144
52.0
0.214
168.4
3000
0.633
133
1.898
50.6
0.169
49.2
0.232
163.6
3500
0.659
125
1.690
43.4
0.194
45.9
0.242
159.3
4000
0.689
116
1.552
35.8
0.219
42.1
0.256
149.4
4500
0.724
107
1.444
28.4
0.238
38.3
0.274
144.3
5000
0.758
99
1.378
21.4
0.263
33.9
0.294
135.8
5500
0.800
90
1.309
13.5
0.287
30.0
0.319
130.4
6000
0.840
82
1.252
6.0
0.304
25.3
0.333
124.2
MP4T636535, VCE = 3 Volts, IC = 40 mA
Frequency
(MHz)
Mag.
S11E
Angle
Mag.
S21E
Angle
Mag.
S12E
Angle
Mag
S22E
Angle
500
1000
0.589
0.604
-173
141
9.150
5.202
93.6
80.8
0.044
0.067
55.7
59.2
0.275
0.220
-120.0
-147.2
1500
0.620
159
3.505
70.8
0.094
58.6
0.210
-164.0
2000
0.642
149
2.685
62.2
0.119
56.4
0.210
174.3
2500
0.666
138
2.218
54.1
0.145
53.8
0.212
171.8
3000
0.681
128
1.935
45.9
0.172
50.0
0.220
168.3
3500
0.704
119
1.710
37.6
0.195
46.0
0.234
161.2
4000
0.738
110
1.560
29.8
0.218
41.9
0.248
153.7
4500
0.777
101
1.445
22.3
0.240
37.8
0.265
147.0
5000
0.819
92
1.365
14.5
0.262
33.7
0.283
140.6
5500
0.858
82
1.290
6.7
0.284
29.9
0.301
134.8
6000
0.896
73
1.228
-1.4
0.305
25.5
0.328
128.3
MP4T636535, VCE = 3 Volts, IC = 60 mA
Frequency
(MHz)
Mag.
S11E
Angle
Mag.
S21E
Angle
Mag.
S12E
Angle
Mag
S22E
Angle
500
1000
0.604
0.614
-179
167
8.203
4.730
92.9
80.5
0.040
0.084
60.9
63.6
0.242
0.189
-112.0
-139.1
1500
0.631
156
3.220
69.9
0.091
61.8
0.182
-155.9
2000
0.655
146
2.480
60.6
0.116
59.0
0.181
-168.3
2500
0.681
135
2.048
51.8
0.141
55.8
0.182
-172.5
3000
0.697
125
1.778
43.3
0.166
51.9
0.190
-174.3
3500
0.721
116
1.573
34.8
0.189
47.9
0.204
170.8
4000
0.758
107
1.430
26.8
0.211
43.9
0.217
164.7
4500
0.798
97
1.325
19.3
0.232
40.0
0.234
158.5
5000
0.843
88
1.255
11.4
0.254
36.2
0.253
152.9
5500
0.883
79
1.190
3.3
0.279
32.4
0.278
146.6
6000
0.922
69
1.125
-5.2
0.298
27.6
0.300
138.4
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
4
Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365 Series
V2.00
MP4T6365
Typical Performance Curves
NOMINAL COLLECTOR-BASE CAPACITANCE (COB)
vs COLLECTOR-BASE VOLTAGE (MP4T636535)
POWER DERATING CURVES
500
400
1
COLLECTOR-BASE
CAPACITANCE (pF)
TOTAL POWER
DISSIPATION (mW)
1.1
MP4T636500 Chip on
Infinite Heat Sink
450
350
300
250
MP4T636535 in
Micro-X Package
200
150
MP4T636533 in
SOT-23 Package
100
50
0.9
0.8
0.7
0.6
0.5
0.4
0
0
0
25
50
75
100
125
150
175
5
10
AMBIENT TEMP (7C)
NOMINAL GAIN vs COLLECTOR CURRENT at
f = 1.0 GHz, VCE = 3 Volts (MP4T636535)
NOMINAL GAIN vs FREQUENCY at
VCE = 3 Volts, IC = 10 mA (MP4T636535)
20
19
24
18
GAIN (dB)
20
GAIN (dB)
15
COLLECTOR-BASE VOLTAGE
(Volts)
16
GTU (MAX)
12
MAG
17
16
15
GTU (MAX)
14
13
8
|S21E|2
12
|S21E|2
4
11
1
0
1
5
2
10
100
COLLECTOR CURRENT (mA)
10
FREQUENCY (GHz)
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
5
Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365 Series
V2.00
Typical Performance Curves (Cont’d)
NOMINAL DC CURRENT GAIN (hFE) vs
COLLECTOR CURRENT at VCE = 3 VOLTS
(MP4T636535)
NOMINAL GAIN BANDWIDTH PRODUCT (fT) vs
COLLECTOR CURRENT at VCE = 3 VOLTS
(MP4T636535)
120
DC CURRENT GAIN (hFE)
GAIN BANDWIDTH
PRODUCT (GHz)
12
10
8
6
4
110
100
90
80
70
60
50
40
2
1
10
0
100
NOMINAL NOISE FIGURE and ASSOCIATED
GAIN vs FREQUENCY at VCE = 3 VOLTS,
COLLECTOR CURRENT = 5 mA (MP4T636535)
20
30
40
50
60
70
NOMINAL NOISE FIGURE and ASSOCIATED
GAIN at VCE = 3 VOLTS, and 1 GHz vs the
COLLECTOR CURRENT (MP4T636535)
100
16
10
NOISE
ASSOCIATED
FIGURE(dB)
GAIN (dB)
NOISE
ASSOCIATED
FIGURE(dB)
GAIN (dB)
10
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
ASSOCIATED GAIN
NOISE FIGURE
2
1
0.1
1
COLLECTOR CURRENT (mA)
10
14
12
ASSOCIATED GAIN
10
8
6
4
NOISE FIGURE
2
0
1
10
COLLECTOR CURRENT (mA)
100
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
6
Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365 Series
V2.00
Typical Performance Curves (Cont’d)
NOMINAL OUTPUT POWER at the 1dB
COMPRESSION POINT vs COLLECTOR CURRENT
at f = 2 and 4 GHz, VCE = 3 VOLTS (MP4T636535)
24
POWER OUT @ 1 dB
COMPRESSION (dBm)
22
20
18
16
2 GHz
14
12
10
4 GHz
8
6
0
10
20
30
40
COLLECTOR CURRENT (mA)
Case Styles
MP4T636533
SOT-23  MA4T636533
F
N
A
D
Collector
B
M
G
K
L
H
Base
DIM.
A
B
C
D
E
F
G
H
J
K
L
INCHES
MIN.
MAX.
0.044

0.004

0.040

0.013
0.020
0.003
0.006
0.110
0.119
0.047
0.056
0.037 typical
0.075 typical
0.103

0.024

DIM.
M
N
GRADIENT
10°max. 1
2°. . . 30°
MILLIMETERS
MIN.
MAX.
1.12

0.10

1.00

0.35
0.50
0.08
0.15
2.80
3.00
1.20
1.40
0.95 typical
1.90 typical
2.60

0.60

E
J
C
Emitter
NOTE:
1. Applicable on all sides
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
7
Low Operating Voltage, High fT Bipolar Microwave Transistors
MP4T6365 Series
V2.00
Case Styles (Cont’d)
MP4T636535
Micro-X  MP4T636535
DIM.
A
B
C
D
E
F
G
H
Emitter
F
4 PLCS.
E
H
Collector
Base
B
Emitter
INCHES
MIN.
MAX.
0.092
0.108
0.079
0.087
0.070

0.019
0.025
0.018
0.022
0.150

0.003
0.006
45°
MILLIMETERS
MIN.
MAX.
2.34
2.74
2.01
2.21
1.78

0.48
0.64
0.46
0.56
3.81

0.08
0.15
45°
A
C
MP4T636500
D
G
DIM.
A
B (Dia.) 2 plcs.
C
D
E
F (chip thickness)
MP4T636500
B
BASE
C
INCHES
0.013
0.0012
0.004
0.0005
0.013
0.0045
MILLIMETERS
0.325
0.030
0.110
0.013
0.325
0.114
E
MP4T636539
DIM.
A
B
C
D
E
F
G
H
J
K
L
M
INCHES
MIN.
MAX.
0.044

0.004

0.040

0.030
0.035
0.013
0.020
0.003
0.006
0.110
0.119
0.047
0.056
0.075 typical
0.040 typical
0.103

0.024

DIM.
N
P
GRADIENT
10°max. 1
2°. . . 30°
EMITTER
D
A
Case Style SOT-143  MP4T636539
Base
Emitter
G
P
A
J
B
N
H
L
M
E
D
F
MILLIMETERS
MIN.
MAX.
1.10

0.10

1.00

0.75
0.90
0.35
0.50
0.08
0.15
2.80
3.00
1.20
1.40
1.90 typical
1.70 typical
2.60

0.60

C
K
NOTE:
1. Applicable on all sides
Collector Emitter
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480
Fax (408)) 432-3440
8