Low Current 8 Volt, Low Noise High fT Silicon Transistor Features • • • • • • MP4T6825 Series SOT-23 Low Current Operation High fT (8 GHz) Low Noise Figure with 1-5 mA Current Low Phase Noise Inexpensive Available on Tape and Reel Description The MP4T6825 series of low current silicon bipolar transistors provide low noise figure at a bias of 5-10 volts and collector current of 1-5 mA. These inexpensive surface mount transistors are useful for low noise amplifiers and VCOs from VHF through 2.5 GHz. SOT-143 The MP4T6825 series has high fT (8 GHz) and provides approximately 1.5 dB noise figure with 1-3 mA current. These transistors also have low phase noise when used in 510 volt low current VCOs through 3 GHz. The MP4T6825 series are inexpensive transistors designed for RF systems that require low current drain. This family of transistors is available in chip (MP4T682500), SOT-23 (MP4T682533), SOT-143 (MP4T682539), and in the MicroX (MP4T682535) packages. Surface mount packages are available on tape and reel. Chip Absulote Maximum Ratings at 25°C Parameter Absolute Maximum Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Chips or Ceramic Packages Plastic Packages Power Dissipation1 1. 2. 20V 12 V 1.5 V 25 mA +200°C2 -65°C to +200°C -65°C to +150°C See power derating curves. Die or ceramic packages -150°C for plastic pacakges. Specification Subject to Change Without Notice M M-Pulse Microwave__________________________________________________________________________________ 1 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 Low Current 8 Volt, Low Noise High fT Silicon Transistor MP4T6825 Series Electrical Specifications at 25°C Symbol fT |S21E|2 NF GTU (max) MAG P1dB 1. Parameters Gain Bandwidth Product Insertion Power Gain Noise Figure Unilateral Gain Maximum Available Gain Power Out at 1dB Compression RTH (J-A) Thermal Resistance RTH (J-C) Thermal Resistance Test Condition s VCE = 8V IC = 8 mA VCE = 8V IC = 8 mA f = 1 GHz f = 2 GHz VCE = 8V IC = 2 mA f = 1 GHz f = 2 GHz VCE = 8V IC = 8 mA f = 1 GHz f = 2 GHz VCE = 8V IC = 8 mA f = 1 GHz f = 2 GHz VCE = 8V IC = 15 mA f = 1 GHz f = 2 GHz Junction/ Ambient (Free Air) Junction/ Case Units MP4T682500 Chip MP4T682533 SOT-23 MP4T682535 Micro-X MP4T682539 SOT-143 GHz 8 typ. 8 typ. 8 typ. 8 typ. 15 typ. 8 typ. 14 typ. 7 typ. 15 typ. 8 min. 14 typ. 7 typ. 1.8 max. 2.1 typ. 1.9 max. 2.2 typ. 1.8 max. 2.1 typ. 1.9 max. 2.2 typ. 17 typ. 11 typ. 16 typ. 10 typ. 17 typ. 11 typ. 16 typ. 10 typ. 18 typ. 13 typ. 17 typ. 12 typ. 18 typ. 13 typ. 17 typ. 12 typ. 15 typ. 13.5 typ. 14 typ. 12.5 typ. 650 typ. 14 typ. 12.5 typ. 500 typ. 15 typ. 13.5 typ. 625 typ. 1 200 typ. 200 typ. 200 typ. dB dB dB dB dBm °C °C/W 70 max. Junction to infinite heat sink. Electrical Specifications at 25°C Parameters Collector Cut-off Current Conditions VCB = 8 V IE = 0 VEB = 1 V IC = 0 VCE = 8 V IC = 5 mA VCB = 8 V IE = 0 f = 1 MHz Emitter Cut-off Current Forward Current Gain Collector-Base Junction Capacitance Symbol ICBO Min. Typ. Max. 100 Units nA IEBO 1 µA hFE 30 110 250 COB 0.25 0.40 pF Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 2 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 Low Current 8 Volt, Low Noise High fT Silicon Transistor MP4T6825 Series MP4T682535 Typical Scattering Parameters in the MIcro-X Package VCE = 8 Volts, IC = 5 mA Frequency (MHz) 100 300 500 700 900 1500 1900 2500 2900 3300 3900 4500 4900 5500 S11E Mag. 0.66 0.54 0.41 0.32 0.25 0.14 0.11 0.09 0.10 0.10 0.15 0.17 0.20 0.23 Angle -15.7 -42.2 -61.2 -75.3 -86.9 -115.2 -142.6 143.9 128.4 108.0 92.4 79.4 69.5 58.8 S21E Mag. Angle 12.95 164.7 10.74 139.8 8.54 122.7 6.91 110.8 5.74 101.8 3.75 83.3 3.10 73.1 2.46 60.6 2.15 52.1 1.95 47.2 1.72 35.9 1.56 26.4 1.50 19.4 1.35 9.9 Mag. 0.01 0.02 0.03 0.04 0.05 0.08 0.10 0.12 0.14 0.15 0.17 0.20 0.21 0.23 S12E Angle 86.0 71.9 66.4 64.7 63.8 62.0 59.1 55.6 53.0 51.1 46.7 45.0 42.2 37.9 S22E Mag 0.97 0.88 0.79 0.73 0.69 0.63 0.61 0.58 0.56 0.56 0.53 0.53 0.52 0.50 Angle -6.7 -16.8 -22.4 -25.9 -28.5 -35.5 -42.1 -50.5 -55.7 -61.2 -69.6 -79.6 -85.3 -92.9 VCE = 8 Volts, IC = 10 mA Frequency (MHz) 100 300 500 700 900 1500 1900 2500 2900 3300 3900 4500 4900 5500 S11E Mag. 0.49 0.36 0.26 0.20 0.13 0.10 0.11 0.13 0.14 0.15 0.20 0.27 0.25 0.29 Angle -22.0 -55.9 -78.4 -96.0 -125.3 -152.7 160.2 134.4 115.4 102.3 90.5 79.2 70.0 59.3 Mag. 17.06 12.71 9.37 7.28 4.93 3.76 3.07 2.43 2.12 1.92 1.70 1.53 1.48 1.32 S21E Angle 160.4 131.5 114.5 103.5 88.8 78.7 69.0 57.3 49.2 44.2 33.3 23.4 16.4 6.8 Mag. 0.01 0.02 0.03 0.04 0.06 0.07 0.09 0.12 0.13 0.15 0.17 0.19 0.21 0.23 S12E Angle 87.0 71.9 68.8 68.8 67.8 65.9 63.6 59.2 56.7 54.4 50.2 47.8 45.0 40.5 Mag 0.96 0.83 0.74 0.70 0.65 0.63 0.61 0.58 0.57 0.57 0.54 0.54 0.53 0.51 S22E Mag. 17.16 10.98 7.55 5.70 4.56 2.88 2.34 1.86 1.63 1.49 1.33 S21E Angle 154.3 122.3 106.7 97.0 89.8 74.1 64.4 53.1 45.1 39.5 29.7 Mag. 0.01 0.02 0.02 0.03 0.04 0.06 0.08 0.10 0.12 0.14 0.16 S12E Angle 84.7 72.6 71.5 72.3 72.5 70.7 68.6 65.6 64.1 61.9 58.3 Mag 0.93 0.80 0.75 0.72 0.70 0.68 0.67 0.64 0.63 0.63 0.61 Angle -7.9 -17.6 -21.5 -24.0 -28.6 -33.4 -40.0 -48.9 -54.4 -60.7 -69.3 -80.0 -86.0 -94.2 VCE = 8 Volts, IC = 20 mA Frequency (MHz) 100 300 500 700 900 1500 1900 2500 2900 3300 3900 S11E Mag. 0.26 0.22 0.20 0.20 0.20 0.22 0.24 0.27 0.29 0.31 0.36 Angle -48.6 -105.7 -136.0 -155.8 -169.8 161.3 146.4 126.6 115.1 104.4 92.3 S22E Angle -0.8 -14.8 -17.3 -19.8 -22.4 -31.3 -38.4 -48.2 -54.5 -61.5 -70.7 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 3 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 Low Current 8 Volt, Low Noise High fT Silicon Transistor 4500 4900 5500 0.39 0.42 0.46 79.7 70.1 57.6 1.20 1.15 1.02 18.5 11.5 2.9 0.19 0.20 0.23 MP4T6825 Series 55.5 52.7 48.2 0.59 0.58 0.56 -81.0 -88.0 -96.7 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 4 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 Low Current 8 Volt, Low Noise High fT Silicon Transistor MP4T6825 Series Typical Performance Curves (MP4T682535) NOISE FIGURE and ASSOCIATED GAIN at VCE = 8 V, 1 GHz vs COLLECTOR CURRENT POWER DERATING CURVES 20 300 18 250 200 NOISE FIGURE (dB) M P4T 682535 (M I C R O -X ) 150 100 M P4T682533, 39 ( S O T -2 3 , 1 4 3 ) F R E E A I R 50 16 ASSOCIATED GAIN (dB) POWER DISSIPATION (mW) M P 4 T 6 8 2 5 0 0 (C H I P ) O N I N F I N I T E H E A T S I N K A SS O C I AT E D G A IN 14 12 10 8 6 4 N O IS E F I G U R E 2 0 1 0 0 20 40 60 80 100 120 140 160 180 10 200 1 00 C O L L E C T O R C U R R E N T (m A ) A M B I E N T T E M P E R A T U R E (C ) COLLECTOR-BASE CAPACITANCE (COB) vs COLLECTOR-BASE VOLTAGE GAIN vs FREQUENCY at VCE=8 V and IC = 5 mA 0 .3 5 COLL.-BASE CAPACITANCE (pF) 25 20 GAIN (dB) GT U (M A X ) 15 10 |S 21 E |2 5 0.3 0 .2 5 0.2 0 .1 5 0.1 0 .0 5 0 0 1 1 10 F R E Q U E N C Y (G H z) 1 00 GAIN vs COLLECTOR CURRENT at 1 GHz, VCE=8 V GAIN BANDWIDTH PRODUCT (fT ) vs COLLECTOR CURRENT at VCE=8 V 22 10 20 9 8 18 7 16 GAIN (dB) GAIN BANDWIDTH (GHz) 10 C O L L E C T O R -B AS E V O L T A G E (V o lts ) 6 5 4 14 |S 2 1 E |2 12 3 10 2 8 1 M AG G T U (M AX ) 6 0 1 10 10 0 1 10 C O L L E C T O R C U R R E N T (m A) C O L L E C T O R C U R R E N T (m A) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 5 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 10 0 Low Current 8 Volt, Low Noise High fT Silicon Transistor MP4T6825 Series Typical Performance Curves (MP4T682535) Cont. DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 8 V 1 20 DC CURRENT GAIN 1 10 1 00 90 80 70 60 50 1 10 10 0 C O L L E C T O R C U R R E N T (m A) OUTPUT POWER at 1 dB COMPRESSION POINT vs COLLECTOR CURRENT VCE=8V 16 f = 1 GHz 14 POUT - 1dB (dBm) 12 10 8 6 4 f = 2 GH z 2 0 0 5 10 15 20 25 C O L L E C T O R C U R R E N T (m A) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 6 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 MP4T6825 Series Low Current 8 Volt, Low Noise High fT Silicon Transistor Case Styles Chip - MP4T682500 MP4T682500 DIM. A B C D BASE INCHES (Nominal) 0.013 0.013 0.0016 0.0045 MM (Nominal) 0.35 0.35 0.040 0.11 DIM. A B C D E F G H J K L INCHES MIN. MAX. 0.044 0.004 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 MILLIMETERS MIN. MAX. 1.12 0.10 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60 DIM. M N GRADIENT 10° max. 1 2° . . . 30° B D THICKNESS EMITTER A C 2 PLCS. SOT-23 - MP4T682533 MP4T682533 F N A D C olle c tor B M G K L H B a se E J C E m itte r NOTE: 1. Applicable on all sides Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 7 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 Low Current 8 Volt, Low Noise High fT Silicon Transistor MP4T6825 Series Case Styles (Con’t) Micro-X - MP4T682535 Emitter F 4 PLCS. E H Collector Base B Emitter A C D G SOT-143 - MP4T682539 B a se E m itte r G P A J B N H L M E D F C K C olle c tor E m itte r Specification Subject to Change Without Notice M-Pulse Microwave_____________________________________________________________________________ _______ 8 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 Low Current 8 Volt, Low Noise High fT Silicon Transistor MP4T6825 Series MP4T682535 INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45° MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.046 0.56 3.81 0.08 0.15 45° DIM. A B C D E F G H J K L M INCHES MIN. MAX. 0.044 0.044 0.040 0.030 0.035 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.075 typical 0.103 0.024 MILLIMETERS MIN. MAX. 1.10 1.10 1.00 0.75 0.90 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.90 typical 2.6 0.6 DIM. N P GRADIENT 10° max. 1 2° . . . 30° DIM. A B C D E F G H MP4T682539 Specification Subject to Change Without Notice M-Pulse Microwave_____________________________________________________________________________ _______ 9 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 Low Current 8 Volt, Low Noise High fT Silicon Transistor MP4T6825 Series NOTE: 1. Applicable on all sides Specification Subject to Change Without Notice M-Pulse Microwave_____________________________________________________________________________ _______ 10 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440