¡ Semiconductor 1A MR27V6452D 4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V6452D is a 64Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 4,194,304 word x 16bit and 8,388,608 word x 8 bit. The MR27V6452D operates on a single +3.3V power supply and is TTL compatible. The MR27 V6452D provides Page mode which can greatly reduce the read access time. Since the MR27V6452 D operates asynchronously , external clocks are not required , making this device easy-to-use. The MR27V6452D is suitable as large-capacity fixed memory for microcomputers and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered in 44-pin SOP package. FEATURES • 4,194,304 word x 16bit / 8,388,608 word x 8bit electrically switchable configuration • Single +3.3V power supply • Access time 120ns Page mode access time 30ns • Input / Output TTL compatible • Three-state output • Package 44-pin plastic SOP (SOP44-P-600-1.27-K) (Product name : MR27V6452DMA) November 1999 1/10 MR27V6452D PIN CONFIGURATION (TOP VIEW) A21 1 A18 2 44 A20 43 A19 A17 3 A7 4 42 A8 41 A9 A6 5 A5 6 40 A10 39 A11 A4 7 A3 8 38 A12 37 A13 A2 9 A1 10 36 A14 35 A15 A0 11 CE 12 VSS 13 34 A16 33 BYTE/Vpp 32 VSS 31 D15/A-1 OE 14 D0 15 30 D7 29 D14 D8 16 D1 17 28 D6 27 D13 D9 18 D2 19 26 D5 25 D12 D10 20 D3 21 24 D4 23 VCC D11 22 44-pin SOP PIN NAMES D15/A-1 FUNCTIONS Data output / Address input A0-A21 Address input D0-D14 Data output CE Chip enable OE VCC Output enable Power supply voltage VSS GND BYTE/VPP Mode switch / Program power supply voltage 2/10 MR27V6452D BLOCK DIAGRAM A-1 OE BYTE/VPP CE OE PGM Row Decoder CE Memory Matrix 4,194,304X16-Bit or 8,388,608X8-Bit Column Decoder A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 Address Buffer X8/X16 Switch Multiplexer & Page Data Latch Output Buffer D0 D2 D1 D4 D3 D6 D5 D8 D7 D10 D9 D12 D11 D14 D13 D15 In 8-bit output mode, these pins are three-stated and pin D15 functions as the A-1 address pin. FUNCTION TABLE MODE CE OE BYTE/VPP READ (16-Bit) L L H READ (8-Bit) L L L OUTPUT DISABLE L H STAND-BY H * PROGRAM L H PROGRAM INHIBIT H H PROGRAM VERIFY * : Don't Care H L H L VCC 3.3V H D0 - D7 D8 - D14 DOUT D15/A-1 DOUT Hi-Z L/H Hi-Z * Hi-Z L * DIN 9.75V 4.0V Hi-Z DOUT 3/10 MR27V6452D ABSOLUTE MAXIMUM RATINGS Symbol Parameter Operating temperature under bias Topr Storage temperature Tstg Condition Output voltage VO Power supply voltage Program power supply voltage VCC VPP Power dissipation per package PD Unit -55 to 125 °C °C -0.5 to VCC + 0.5 V -0.5 to VCC + 0.5 V -0.5 to 5 V - VI Input voltage Value 0 to 70 relative to VSS -0.5 to 11.5 V 1.0 W - RECOMMENDED OPERATING CONDITIONS FOR READ (Ta=0 to 70°C) Parameter Symbol VCC power supply voltage VCC VPP power supply voltage VPP Input "H" level VIH Input "L" level Condition VCC=3.0V-3.6V VIL Min. Typ. Max. 3.0 3.6 Unit V -0.5 - VCC+0.5 V 2.2 - VCC+0.5* V -0.5** - 0.6 V Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. 4/10 MR27V6452D ELECTRICAL CHARACTERISTICS (Read operation) DC Characteristics (VCC=3.3V±0.3V, Ta=0 to 70°C) Symbol ILI Condition VI=0 to Vcc Min. - Typ. - Max. Output leakage current ILO VO=0 to Vcc - - 10 µA VCC power supply current (Standby) ICS1 CE=VCC 50 CE=VIH - µA ICS2 - 1 mA - - 100 mA - - µA Parameter Input leakage current 10 Unit µA VCC power supply current (Read) ICCA VPP power supply current IPP Input "H" level VIH - 2.2 - 10 VCC+0.5* Input "L" level VIL - -0.5** - 0.6 V Output "H" level VOH IOH=-400µA - - V Output "L" level VOL IOL=2.1mA 2.4 - 0.4 V CE=VIL , OE=VIH tc=120ns VPP=VCC V Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. AC Characteristics (VCC=3.3V±0.3V, Ta=0 to 70°C) Parameter Symbol Condition Min. Max. Unit - 120 - - ns Address access time TC TACC Page access cycle time TPC Page access time TPAC TCE TOE TCHZ OE=VIL TOHZ TOH Address access cycle time CE access time OE access time Output disable time Output hold time Measurement conditions Input signal level Input timing reference level Output load Output timing reference level CE=OE=VIL - 120 ns - ns 30 ns - 120 ns - 40 ns 30 ns ns ns 30 - OE=VIL CE=VIL CE=VIL 0 0 CE=OE=VIL 0 - 25 - 0V/3V 0.8V/2.0V 100pF 0.8V/2.0V 2.08V 800ohms Output 100pF 5/10 MR27V6452D TIMING CHART NORMAL MODE READ CYCLE tC ADDRESS tOH tCE CE tCHZ tOE OE tACC DOUT tOHZ Valid Data Hi-Z Hi-Z PAGE MODE READ CYCLE tC A3 - A21 tPC tPC A0 - A2 (Word mode) A-1 - A2 (Byte mode) tOH tCE CE tCHZ tOE OE tACC tPAC tPAC tOHZ DOUT Hi-Z Hi-Z 6/10 MR27V6452D ELECTRICAL CHARACTERISTICS (Programming operation) DC Characteristics (Ta=25°C±5°C) Condition Symbol ILI Parameter Input leakage current VI=VCC+0.5V VPP power supply current (Program) IPP2 VCC power supply current ICC CE=VIL - Input "H" level VIH - Input "L" level VIL - Output "H" level VOH IOH=-400µA Output "L" level VOL Program voltage VPP IOL=2.1mA - VCC power supply voltage VCC - Min. - Typ. - Max. 50 mA - - 80 mA 3.0 - VCC+0.5 V -0.5 2.4 - 0.8 - V V - - 0.45 V 9.5 3.9 9.75 10.0 V 4.0 4.1 V 10 Unit µA Voltage is relative to Vss AC Characteristics (Vcc=4.0V±0.1V,Vpp=9.75V±0.25V,Ta=25°C±5°C) Symbol TAS Condition - OE set-up time Data set-up time TOES - 2 Typ. - TDS - 100 Address hold time TAH - 2 Data hold time Output float delay from OE TDH TOHZ - TVS TPW - Data valid from OE TOE - Address hold from OE high TAHO - Parameter Address set-up time VPP voltage set-up time Program pulse width Max. - Unit ns - - µs ns - - µs 100 - - 0 - 100 ns ns 2 - - µs 9 10 11 µs - - 0 100 - ns - Min. 100 ns Pin Check Function Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM programmer. Setting up address as the following condition call the preprogrammed codes on device outputs. (Vcc=3.3V±0.3V,CE=OE=VIL,BYTE/Vpp=VIH,Ta=25°C±5°C) A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 DATA 0 1 0 1 0 1 0 1 0 VH* 0 1 0 1 0 1 0 0 1 1 0 0 FF00 1 0 1 0 1 0 1 0 1 VH* 1 0 1 0 1 0 1 1 0 0 1 1 00FF Other conditions FFFF * :VH=8V±0.25V 7/10 MR27V6452D Consecutive Programming Waveforms A0 - A21 tAS tAH tPW CE High OE tDS tDH D0 - D15 Din Din tVS BYTE/VPP Consecutive Program Verify Waveforms A0 - A21 High CE tACC tAHO OE tOE D0 - D15 tOHZ Dout Dout 9.75V BYTE/VPP 8/10 MR27V6452D Program and Program Verify Cycle Waveforms A0 - A21 tAS tAHO tPW CE tOES OE tOHZ D0 - D15 tOE tDH tDS Din tOHZ Dout 9.75V BYTE/VPP PIN Capacitance (VCC=3.3V, Ta=25°C, f=1MHz) Parameter Input BYTE/VPP Output Symbol CIN1 CIN2 COUT Condition VI=0V VO=0V Min. - Typ. - Max. 8 Unit - - 120 pF - - 10 9/10 MR27V6452D Programming / Verify Flow Chart Programming Verify Start Start NO Pin Check Bad insertion NO Pin Check Bad insertion OK OK Address = First location Address = First location VCC=3.0V VPP=3.0V VCC=4.0V VPP=9.75V Verify (One Byte) NG PASS Program 10µs VCC=3.6V VPP=3.6V NO Increment Address Last Address ? Verify (One Byte) YES Address = First location NG PASS Device Passed Device Failed X=0 NG X=X+1 Verify (One Byte) PASS NO Increment Address YES Last Address ? X=2? YES NO VCC=3.0V VPP=3.0V Program 10µs NG Verify (One Byte) PASS Device Passed Device Failed 10/10