Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 2, 9/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pulsed Width = 128 μsec, Duty Cycle = 10% Application Pout (W) f (MHz) Gps (dB) ηD (%) Narrowband 500 Peak 1030 19.7 62.0 Broadband 500 Peak 960--1215 18.5 57.0 960--1215 MHz, 500 W, 50 V PULSED LATERAL N--CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465--06, STYLE 1 NI--780 MRF6V12500HR3 CASE 465A--06, STYLE 1 NI--780S MRF6V12500HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit ZθJC 0.044 °C/W Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 500 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. RF Device Data Freescale Semiconductor MRF6V12500HR3 MRF6V12500HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) B (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 10 μAdc 110 — — Vdc Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 200 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 20 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) IDSS — — 200 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 1.32 mA) VGS(th) 0.9 1.7 2.4 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 200 mAdc, Measured in Functional Test) VGS(Q) 1.7 2.4 3.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.26 Adc) VDS(on) — 0.25 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.2 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 697 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 1391 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 1030 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Gps 18.5 19.7 22.0 dB Drain Efficiency ηD 58.0 62.0 — % Input Return Loss IRL — --18 --9 dB Typical Broadband Performance — 960--1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 960--1215 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Gps — 18.5 — dB Drain Efficiency ηD — 57.0 — % 1. Part internally matched both on input and output. MRF6V12500HR3 MRF6V12500HSR3 2 RF Device Data Freescale Semiconductor R3 VBIAS R1 C5 C9 C8 C7 C12 C13 VSUPPLY + + C14 C15 C3 Z19 Z9 RF INPUT Z10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z11 Z12 Z13 Z14 Z15 Z16 Z17 C2 Z8 C1 Z18 RF OUTPUT DUT Z21 Z20 R4 R2 C11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9, Z20 Z10 C6 C10 C16 C4 0.457″ x 0.080″ Microstrip 0.250″ x 0.080″ Microstrip 0.605″ x 0.040″ Microstrip 0.080″ x 0.449″ Microstrip 0.374″ x 0.608″ Microstrip 0.118″ x 1.252″ Microstrip 0.778″ x 1.710″ Microstrip 0.095″ x 1.710″ Microstrip 0.482″ x 0.050″ Microstrip 0.138″ x 1.500″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19, Z21 PCB 0.161” x 1.500″ Microstrip 0.613” x 1.281″ Microstrip 0.248” x 0.865″ Microstrip 0.087” x 0.425″ Microstrip 0.309” x 0.090″ Microstrip 0.193” x 0.516″ Microstrip 0.279” x 0.080″ Microstrip 0.731” x 0.080″ Microstrip 0.507” x 0.040″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 1. MRF6V12500HR3(HSR3) Test Circuit Schematic Table 5. MRF6V12500HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C3, C4, C5, C6 33 pF Chip Capacitors ATC100B330JT500XT ATC C7, C10 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C8, C11, C13, C16 2.2 μF, 100 V Chip Capacitors 2225X7R225KT3AB ATC C9 22 μF, 25 V Chip Capacitor TPSD226M025R0200 AVX C12 1 μF, 100 V Chip Capacitor GRM31CR72A105KA01L Murata C14, C15 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1, R2 56 Ω, 1/4 W Chip Resistors CRCW120656R0FKEA Vishay R3, R4 0 Ω, 3 A Chip Resistors CRCW12060000Z0EA Vishay MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 3 C14 C12 R3 Rev. 1 C8 C7 R1 C13 C5 C3 CUT OUT AREA MRF6V12500H C9 C1 R2 C11 C10 R4 C4 C15 C2 C6 C16 Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout MRF6V12500HR3 MRF6V12500HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 10000 160 C, CAPACITANCE (pF) MAXIMUM OPERATING Tcase (°C) Ciss 1000 Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 1 Crss 140 120 100 Pout = 525 W 80 Pout = 500 W 60 40 VDD = 50 Vdc, IDQ = 200 mA f = 1030 MHz, Pulse Width = 128 μsec 20 0 0.1 0 10 20 30 40 0 50 5 10 15 20 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) DUTY CYCLE (%) Figure 3. Capacitance versus Drain--Source Voltage Figure 4. Safe Operating Area 22 80 20 60 50 19 18 40 ηD 17 30 16 20 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 15 14 30 Pout, OUTPUT POWER (dBm) 70 Gps ηD, DRAIN EFFICIENCY (%) 21 Gps, POWER GAIN (dB) Pout = 475 W 10 0 1000 100 25 62 P3dB = 57.6 dBm (575 W) 61 Ideal 60 59 P1dB = 57.1 dBm (511 W) 58 57 Actual 56 55 54 53 52 51 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 50 49 32 34 36 38 40 42 30 Pout, OUTPUT POWER (WATTS) PULSED Pin, INPUT POWER (dBm) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 6. Pulsed Output Power versus Input Power 22 22 21 IDQ = 800 mA 20 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 21 20 400 mA 19 600 mA 200 mA 19 18 17 16 15 14 18 VDD = 50 Vdc, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 17 30 100 VDD = 30 V 13 1000 12 30 50 V IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 45 V 40 V 35 V 100 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 7. Pulsed Power Gain versus Output Power Figure 8. Pulsed Power Gain versus Output Power 1000 MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 22 TC = --30_C 500 21 85_C 25_C Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) 600 55_C 400 300 200 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 100 2 4 6 8 10 17 12 60 25_C 85_C 50 40 55_C 30 16 15 0 0 18 70 TC = --30_C 20 19 80 Gps 20 ηD VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 14 30 100 Pin, INPUT POWER (dBm) PULSED ηD, DRAIN EFFICIENCY (%) 700 10 0 1000 Pout, OUTPUT POWER (WATTS) PULSED Figure 9. Pulsed Output Power versus Input Power Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power 109 MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 500 W Peak, Pulse Width = 128 μsec, Duty Cycle = 10%, and ηD = 62%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature MRF6V12500HR3 MRF6V12500HSR3 6 RF Device Data Freescale Semiconductor Zo = 5 Ω Zload f = 1030 MHz f = 1030 MHz Zsource VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak f MHz Zsource Ω Zload Ω 1030 1.36 -- j1.27 2.50 -- j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 7 C11 C9 C7 C5 C17 C15 C13 R1 C18 CUT OUT AREA C3 C1 C2 C8 MRF6V12500 Rev. 1 C4 R2 C14 C16 C10 C6 C12 Figure 13. MRF6V12500H(HS) Test Circuit Component Layout — 960--1215 MHz Table 6. MRF6V12500H(HS) Test Circuit Component Designations and Values — 960--1215 MHz Part Description Part Number Manufacturer C1 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC C2 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC C3, C4 33 pF Chip Capacitors ATC100B330JT500XT ATC C5, C6, C11, C12 2.2 μF, 100 V Chip Capacitors G2225X7R225KT3AB ATC C7 22 μF, 35 V Tantalum Capacitor T491X226K035AT Kemet C8 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC C9, C10 39 pF Chip Capacitors ATC100B390JT500XT ATC C13, C14 0.022 μF, 100 V Chip Capacitors C1825C223K1GAC Kemet C15, C16 0.10 μF, 100 V Chip Capacitors C1812F104K1RAC Kemet C17, C18 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1, R2 22 Ω, 1/4 W Chip Resistors CRCW120622R0FKEA Vishay PCB 0.030″, εr = 2.55 AD255A Arlon MRF6V12500HR3 MRF6V12500HSR3 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 960--1215 MHz 19 64 Gps, POWER GAIN (dB) 18 62 17 60 ηD 16 58 15 56 14 0 IRL 13 --5 12 --10 VDD = 50 Vdc, Pout = 500 W Peak (50 W Avg.), IDQ = 200 mA Pulse Width = 128 μsec, Duty Cycle = 10% 11 10 ηD, DRAIN EFFICIENCY (%) 66 Gps 900 950 1000 1050 1100 1150 1200 1250 --15 --20 1300 IRL, INPUT RETURN LOSS (dB) 20 f, FREQUENCY (MHz) Figure 14. Pulsed Power Gain, Drain Efficiency and IRL versus Frequency Gps, POWER GAIN (dB) 21 VDD = 50 Vdc IDQ = 200 mA Pulse Width = 128 μsec Duty Cycle = 10% 65 1150 MHz 1215 MHz 60 ηD 960 MHz 20 1150 MHz 19 18 50 960 MHz Gps 17 200 55 1030 MHz 1030 MHz 45 1215 MHz ηD, DRAIN EFFICIENCY (%) 22 40 250 300 350 400 450 500 550 600 Pout, PEAK OUTPUT POWER (WATTS) Figure 15. Power Gain and Drain Efficiency versus Output Power MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 9 Zo = 5 Ω f = 1215 MHz f = 1215 MHz Zsource Zload f = 960 MHz f = 960 MHz VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak f MHz Zsource Ω Zload Ω 960 2.25 -- j1.78 1.38 -- j1.53 1030 2.51 -- j1.02 1.48 -- j1.11 1090 2.69 -- j0.73 1.51 -- j0.78 1150 2.71 -- j0.65 1.53 -- j0.49 1215 2.48 -- j0.76 1.53 -- j0.33 Zsource = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from Zload drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance — 960--1215 MHz MRF6V12500HR3 MRF6V12500HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N M T A M B ccc M M T A M T A M B aaa M M T A (LID) B M S (LID) ccc H R (INSULATOR) B M M (INSULATOR) M C F E A SEATING PLANE T A DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465--06 ISSUE G NI--780 MRF6V12500HR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N (LID) ccc M M T A M B R M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE (FLANGE) CASE 465A--06 ISSUE H NI--780S MRF6V12500HSR3 MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2009 • Initial Release of Data Sheet 1 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Added RF High Power Model availability to Product Software, p. 9 2 Sept. 2010 • Maximum Ratings table: corrected VDSS from --0.5, +100 to --0.5, +110 Vdc, p. 2 • Added 960--1215 MHz Broadband application as follows: -- Typical Performance, p. 1, 2 -- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 8 -- Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency, p. 9 -- Fig. 15, Power Gain and Drain Efficiency versus Output Power, p. 9 -- Fig. 16, Series Equivalent Source and Load Impedance, p. 10 MRF6V12500HR3 MRF6V12500HSR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. MRF6V12500HR3 MRF6V12500HSR3 Document RF DeviceNumber: Data MRF6V12500H Rev. 2, 9/2010 Freescale Semiconductor 13