Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to 1510 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 23 Watts Avg., f = 1507.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 19.5 dB Drain Efficiency — 32% Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW Output Power • Typical Pout @ 1 dB Compression Point ' 100 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1470 - 1510 MHz, 23 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S1500HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S1500HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C CW 75 0.36 W W/°C Symbol Value (2,3) CW Operation @ TA = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 55 W CW Case Temperature 77°C, 23 W CW RθJC 0.65 0.74 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008-2009. All rights reserved. RF Device Data Freescale Semiconductor MRF7S15100HR3 MRF7S15100HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDD = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 174 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 600 mAdc, Measured in Functional Test) VGS(Q) 2 2.7 3.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.74 Adc) VDS(on) 0.1 0.2 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.6 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 300 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 176 — pF Off Characteristics On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, Pout = 23 W Avg., f = 1507.5 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 18 19.5 21 dB Drain Efficiency ηD 30 32 — % PAR 5.9 6.2 — dB ACPR — - 38 - 35 dBc IRL — - 15 -8 dB Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) MRF7S15100HR3 MRF7S15100HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, 1470 - 1510 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 100 — — 40 — W IMD Symmetry @ 90 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 70 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 23 W Avg. GF — 0.2 — dB Average Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 100 W CW Φ — 4.5 — ° Delay — 1.9 — ns Part - to - Part Insertion Phase Variation @ Pout = 100 W CW, f = 1490 MHz, Six Sigma Window ΔΦ — 23 — ° Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.010 — dB/°C ΔP1dB — 0.007 — W/°C Average Group Delay @ Pout = 100 W CW, f = 1490 MHz Output Power Variation over Temperature ( - 30°C to +85°C) MHz MRF7S15100HR3 MRF7S15100HSR3 RF Device Data Freescale Semiconductor 3 R2 B1 VBIAS + R3 RF INPUT Z1 C5 C4 C3 R1 L1 Z12 Z13 C2 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 C1 L3 L2 VSUPPLY + C8 C11 C10 C9 Z26 Z14 Z15 Z28 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 RF OUTPUT C6 Z29 Z27 DUT VSUPPLY C7 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 0.084″ 0.149″ 0.149″ 0.149″ 0.084″ 0.084″ 0.218″ 0.084″ 0.224″ 0.084″ 1.288″ 1.288″ 1.288″ 1.330″ x 0.078″ Microstrip x 0.153″ Microstrip x 0.303″ Microstrip x 0.065″ Microstrip x 0.146″ Microstrip x 0.104″ Microstrip x 0.080″ Microstrip x 0.206″ Microstrip x 0.085″ Microstrip x 0.369″ Microstrip x 0.206″ Microstrip x 0.144″ Microstrip x 0.369″ Microstrip x 0.112″ Microstrip Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26, Z27 Z28, Z29 PCB C12 C13 1.330″ x 0.538″ Microstrip 0.270″ x 0.280″ Microstrip 0.187″ x 0.150″ Microstrip 0.084″ x 0.042″ Microstrip 0.184″ x 0.292″ Microstrip 0.084″ x 0.066″ Microstrip 0.886″ x 0.194″ Microstrip 0.300″ x 0.084″ Microstrip 0.084″ x 0.215″ Microstrip 0.221″ x 0.075″ Microstrip 0.084″ x 0.175″ Microstrip 0.200″ x 0.525″ Microstrip 0.235″ x 0.102″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF7S15100HR3(HSR3) Test Circuit Schematic Table 5. MRF7S15100HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead 2743019447 Fair - Rite C1, C6, C7, C8 15 pF Chip Capacitors ATC100B150JT500XT ATC C2 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC C3 10 pF Chip Capacitor ATC100B100JT500XT ATC C4, C9, C13 6.8 μF, 50 V Chip Capacitors C4532JB1H685MT TDK C5, C10 100 μF, 50 V Electrolytic Capacitors 222215371101 Vishay C11, C12 2.2 μF, 50 V Chip Capacitors C3225JB2A225MT TDK L1, L2, L3 7.15 nH Inductors 1606 - TLC Coilcraft R1, R2 100 Ω, 1/4 W Chip Resistors CRCW12061000FKEA Vishay R3 10 KΩ, 1/4 W Chip Resistor CRCW12061002FKEA Vishay MRF7S15100HR3 MRF7S15100HSR3 4 RF Device Data Freescale Semiconductor B1 R3 R2 C8 C3 C11 C9 C4 R1 L1 C5 C10 CUT OUT AREA C2 C1 L3 L2 C6 C7 C12 C13 MRF7S15100H/HS Rev. 3 Figure 2. MRF7S15100HR3(HSR3) Test Circuit Component Layout MRF7S15100HR3 MRF7S15100HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 19 34 Gps 33 18 ηD VDD = 28 Vdc, Pout = 23 W (Avg.) IDQ = 600 mA, Single−Carrier W−CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 15 14 31 PARC 13 −36 −5 −37 −10 −38 12 −39 11 −40 ACPR IRL 10 1400 1425 1450 1475 1500 1525 1550 1575 −15 −20 −25 −41 1600 −30 −0.7 −0.8 −0.9 −1 PARC (dB) 16 32 IRL, INPUT RETURN LOSS (dB) 17 ACPR (dBc) Gps, POWER GAIN (dB) ηD, DRAIN EFFICIENCY (%) 35 20 −1.1 −1.2 f, FREQUENCY (MHz) Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 23 Watts Avg. IMD, INTERMODULATION DISTORTION (dBc) 20 750 mA 600 mA 18 450 mA 17 VDD = 28 Vdc, f = 1490 MHz CW Measurements 300 mA 16 1 10 100 VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 600 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1490 MHz −20 IM3−L −30 IM3−U IM5−U IM5−L −40 IM7−U −50 IM7−L −60 −70 1 200 10 100 Pout, OUTPUT POWER (WATTS) CW TWO−TONE SPACING (MHz) Figure 4. CW Power Gain versus Output Power Figure 5. Intermodulation Distortion Products versus Tone Spacing 21 19 18 17 16 15 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 20 1 VDD = 28 Vdc, IDQ = 600 mA, f = 1490 MHz, Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 ACPR −1 −2 ηD −15 50 −20 45 −1 dB = 24.14 W 40 Gps −2 dB = 32.65 W 55 −3 35 −3 dB = 43.29 W −4 −25 −30 ACPR (dBc) 19 −10 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) IDQ = 900 mA −35 30 −40 25 −45 PARC −5 15 25 35 45 55 65 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak - to - Average Ratio Compression (PARC) versus Output Power MRF7S15100HR3 MRF7S15100HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 22 25_C −30_C 75 −25 60 85_C Gps 85_C 25_C 16 −18 45 TC = −30_C 14 30 ACPR 15 12 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ηD 10 1 10 100 0 200 −32 −39 −46 ACPR (dBc) 25_C 18 90 85_C ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQ = 600 mA, f = 1490 MHz Single−Carrier W−CDMA, 3.84 MHz 20 Channel Bandwidth −53 −60 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 25 −5 20 15 −10 10 −15 5 VDD = 28 Vdc IDQ = 600 mA S11 S11 (dB) S21 (dB) S21 −20 0 −25 1150 1250 1350 1450 1550 1650 1750 1850 1950 2050 2150 2250 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response 109 MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 23 W Avg., and ηD = 32%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 9. MTTF versus Junction Temperature MRF7S15100HR3 MRF7S15100HSR3 RF Device Data Freescale Semiconductor 7 W - CDMA TEST SIGNAL 100 10 0 −10 3.84 MHz Channel BW −20 1 Input Signal −30 0.1 (dB) PROBABILITY (%) 10 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 1 2 3 4 5 6 −40 −50 −60 +ACPR in 3.84 MHz Integrated BW −ACPR in 3.84 MHz Integrated BW −70 −80 7 8 9 PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal 10 −90 −100 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 11. Single - Carrier W - CDMA Spectrum MRF7S15100HR3 MRF7S15100HSR3 8 RF Device Data Freescale Semiconductor Zo = 10 Ω Zload f = 1570 MHz f = 1410 MHz f = 1570 MHz f = 1410 MHz Zsource VDD = 28 Vdc, IDQ = 600 mA, Pout = 23 W Avg. f MHz Zsource W Zload W 1410 2.51 - j5.82 4.12 - j4.20 1430 2.53 - j5.58 3.95 - j4.07 1450 2.55 - j5.36 3.78 - j3.94 1470 2.58 - j5.15 3.61 - j3.80 1490 2.62 - j4.97 3.45 - j3.65 1510 2.67 - j4.81 3.30 - j3.51 1530 2.73 - j4.68 3.15 - j3.37 1550 2.79 - j4.57 3.00 - j3.22 1570 2.85 - j4.49 2.87 - j3.06 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF7S15100HR3 MRF7S15100HSR3 RF Device Data Freescale Semiconductor 9 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 56 Ideal Pout, OUTPUT POWER (dBm) 55 P3dB = 51.63 dBm (146 W) 54 53 P1dB = 50.95 dBm (125 W) 52 Actual 51 50 49 48 VDD = 28 Vdc, IDQ = 600 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 1500 MHz 47 46 27 28 29 30 31 32 33 34 35 36 37 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level P1dB Zsource Ω Zload Ω 2.02 + j6.21 2.00 - j3.65 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V MRF7S15100HR3 MRF7S15100HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 2X 1 Q bbb M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N M T A M B M ccc M T A M M aaa M T A M (LID) B S (LID) ccc H R (INSULATOR) M T A M B DIM A B C D E F G H K M N Q R S aaa bbb ccc M (INSULATOR) B M C F E A T A SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF7S15100HR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N ccc M R (LID) M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE (FLANGE) CASE 465A - 06 ISSUE H NI - 780S MRF7S15100HSR3 MRF7S15100HR3 MRF7S15100HSR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 July 2008 • Initial Release of Data Sheet 1 Feb. 2009 • Added Fig. 9, MTTF versus Junction Temperature, p. 7 2 June 2009 • Added Maximum CW limit and temperature derating factor to the Maximum Ratings table, p. 1 • Fig. 10, CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal and Fig. 11, Single - Carrier W - CDMA Spectrum updated to show the undistorted input test signal, p. 8 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation, Tools and Software, p. 12 MRF7S15100HR3 MRF7S15100HSR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 Fax: +1 - 303 - 675 - 2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008-2009. All rights reserved. MRF7S15100HR3 MRF7S15100HSR3 Document Number: RF Device Data MRF7S15100H Rev. 2, 6/2009 Freescale Semiconductor 13