FREESCALE MRFE6S9200HR3

Freescale Semiconductor
Technical Data
Document Number: MRFE6S9200H
Rev. 1, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 58 Watts Avg., f = 880 MHz, 3GPP Test Model 1,
64 DPCH with 45.2% Clipping, Channel Bandwidth = 3.84 MHz, Input
Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 35%
Device Output Signal PAR — 6.36 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 300 W CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced
Ruggedness.
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9200HR3
MRFE6S9200HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9200HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9200HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +66
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 200 W CW
Case Temperature 79°C, 58 W CW
RθJC
0.29
0.33
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9200HR3 MRFE6S9200HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 600 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.8
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 4.1 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.41
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
74.61
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
557.27
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg. W - CDMA, f = 880 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
20
21
23
dB
Drain Efficiency
ηD
33
35
—
%
PAR
6
6.36
—
dB
ACPR
—
- 40
- 36.5
dBc
IRL
—
- 15
-9
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Performances (In Freescale Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 1400 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 200 W PEP Pout where IM3 = - 30 dBc
VBW
(Tone Spacing from 100 kHz to VBW)
—
10
—
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout = 58 W Avg.
GF
—
0.5
—
dB
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ Pout = 200 W CW
Φ
—
0.28
—
°
Delay
—
3.72
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 200 W CW,
f = 880 MHz, Six Sigma Window
ΔΦ
—
15.9
—
°
Gain Variation over Temperature ( - 30°C to +85°C)
ΔG
—
0.016
—
dB/°C
ΔP1dB
—
0.008
—
dBm/°C
Average Group Delay @ Pout = 200 W CW, f = 880 MHz
Output Power Variation over Temperature ( - 30°C to +85°C)
1. Part is internally matched on input.
MRFE6S9200HR3 MRFE6S9200HSR3
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
+
Z11
C22 C23 C32 C28 C34
C4
R3
C26
C2
R2
C11
Z15
RF
INPUT
VSUPPLY
Z13
+
C30
+
Z16
C12
Z17
C14
Z18
C16
Z19
RF
OUTPUT
Z25
C18
Z20
Z21 Z22 Z23
Z24
C9
Z1
Z2
Z3
Z4
Z5
Z7
Z6
Z8
Z9
C6
Z10
C10
C13
C15
C17
C19
C21
C1
C20
C7
DUT
C8
Z14
R1
B2
Z12
+
C5
+
C31
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.351″
0.538″
0.424″
0.052″
0.414″
0.052″
0.140″
0.244″
x 0.080″
x 0.080″
x 0.080″
x 0.220″
x 0.220″
x 0.491″
x 0.491″
x 0.736″
C27
R4
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.980″ Taper
C25 C24 C33 C29
C3
Z9
Z10
Z11, Z12
Z13, Z14
Z15
Z16
Z17
Z18
0.119″ x 0.118″ Microstrip
0.305″ x 0.980″ Microstrip
2.134″ x 0.070″ Microstrip
1.885″ x 0.100″ Microstrip
0.100″ x 1.090″ Microstrip
0.212″ x 1.090″ Microstrip
0.083″ x 0.962″ x 1.036″ Taper
0.074″ x 0.816″ x 0.888″ Taper
Z19
Z20
Z21
Z22
Z23
Z24
Z25
PCB
0.074″ x 0.669″ x 0.707″ Taper
0.074″ x 0.524″ x 0.595″ Taper
0.058″ x 0.474″ x 0.488″ Taper
0.326″ x 0.491″ Microstrip
0.708″ x 0.220″ Microstrip
0.555″ x 0.080″ Microstrip
0.356″ x 0.080″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22,
0.030″, εr = 2.55
Figure 1. MRFE6S9200HR3(SR3) Test Circuit Schematic
Table 5. MRFE6S9200HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Small Ferrite Beads, Surface Mount
2743019447
Fair Rite
C1, C2, C3, C4, C5, C6
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C7
2.7 pF Chip Capacitor
ATC100B2R7JT500XT
ATC
C8, C9, C18, C19
1.3 pF Chip Capacitors
ATC100B1R3JT500XT
ATC
C10, C11
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C12, C13
4.3 pF Chip Capacitors
ATC100B4R3JT500XT
ATC
C14, C15, C16, C17
3.3 pF Chip Capacitors
ATC100B3R3JT500XT
ATC
C20
0.6 - 4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C21
0.8 - 8.0 pF Variable Capacitor, Gigatrim
27291SL
Johanson
C22, C23, C24, C25
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C26, C27
10 μF, 35 V Tantalum Chip Capacitors
T491C106K035AT
Kemet
C28, C29
22 μF, 35 V Tantalum Chip Capacitors
T491C226K035AT
Kemet
C30, C31, C32, C33
0.1 μF Chip Capacitors
CDR33Bx104AKYS
Kemet
C34
330 μF, 63 V Electrolytic Capacitor
EKMG630ELL331MJ205
United Chemi - Con
R1, R2, R3, R4
10 Ω, 1/4 W Chip Resistors
CRCW120610R0FKEA
Vishay
MRFE6S9200HR3 MRFE6S9200HSR3
RF Device Data
Freescale Semiconductor
3
C4
C2
C26
900 MHz
NI−880
Rev. 3
B1
C30
R3
C22
C28
C23
C32
C34
C11
R2
C7
C31
B2
R1
CUT OUT AREA
C20
C21
C13
C8
C1
C6
C16 C18
C12 C14
C9
C15 C17 C19
C10
C33
C24
C29
C25
C27
C3
C5
Figure 2. MRFE6S9200HR3(SR3) Test Circuit Component Layout
MRFE6S9200HR3 MRFE6S9200HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
34
Gps
Gps, POWER GAIN (dB)
21
30
20
26
VDD = 28 Vdc, Pout = 58 W (Avg.)
IDQ = 1400 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
19
18
17
0
−0.6
−4
−0.9
16
15
800
−0.3
−1.2
IRL
820
PARC
840
860
880
900
920
940
−9
−12
−1.5
960
−16
IRL, INPUT RETURN LOSS (dB)
22
ηD, DRAIN
EFFICIENCY (%)
38
PARC (dBc)
23
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ Pout = 58 Watts Avg.
45
ηD
Gps, POWER GAIN (dB)
20
19
39
VDD = 28 Vdc, Pout = 99 W (Avg.)
IDQ = 1400 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
Gps
18
33
17
16
−2.2
−3
−2.4
−6
−2.6
IRL
15
14
800
−2.8
PARC
820
840
860
880
900
920
940
−9
−12
−3
960
−15
IRL, INPUT RETURN LOSS (dB)
21
ηD, DRAIN
EFFICIENCY (%)
51
PARC (dBc)
22
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ Pout = 99 Watts Avg.
0
22
IDQ = 2100 mA
21
1750 mA
20
1400 mA
19
1050 mA
18
700 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
Gps, POWER GAIN (dB)
23
VDD = 28 Vdc
f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements
17
VDD = 28 Vdc
f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements
−10
−20
1400 mA
IDQ = 700 mA
1050 mA
−30
−40
1750 mA
−50
2100 mA
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
600
1
10
100
600
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRFE6S9200HR3 MRFE6S9200HSR3
RF Device Data
Freescale Semiconductor
5
−10
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements
−20
−30
3rd Order
−40
5th Order
−50
7th Order
−60
−70
1
10
100
−10
−20
IM3−U
IM5−U
−40
IM5−L
IM7−U
−50
IM7−L
−60
VDD = 28 Vdc, Pout = 240 W (PEP), IDQ = 1400 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−70
1
600
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
1
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON THE CCDF (dB)
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
60
Ideal
0
−1
−2
IM3−L
−30
55
50
−1 dB = 59.7 W
45
−2 dB = 82.5 W
−3
40
−3 dB = 115 W
−4
Actual
35
VDD = 28 Vdc, IDQ = 1400 mA
f = 880 MHz, Input PAR = 7.5 dB
−5
50
70
60
80
90
100
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
30
110
120
Pout, OUTPUT POWER (WATTS)
24
VDD = 28 Vdc, IDQ = 1400 mA, f = 880 MHz
Single−Carrier W−CDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
−30_C
23
−40
Uncorrected, Upper and Lower
−50
DPD Corrected
No Memory Correction DPD Corrected, with
Memory Correction
−60
80
22
60
TC = −30_C
Gps
21
85_C
50
25_C
20
40
85_C
19
30
18
20
17
−70
38
70
25_C
VDD = 28 Vdc
IDQ = 1400 mA
f = 880 MHz
ηD
16
39
40
41
42
43
44
45
46
47
48
49
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
0.1
1
10
100
ηD, DRAIN EFFICIENCY (%)
−30
Gps, POWER GAIN (dB)
ACPR, UPPER AND LOWER RESULTS (dBc)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
10
0
600
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRFE6S9200HR3 MRFE6S9200HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
109
22
IDQ = 1400 mA
f = 880 MHz
108
MTTF (HOURS)
Gps, POWER GAIN (dB)
21
20
19
107
106
18
28 V
VDD = 24 V
32 V
105
17
0
100
200
300
400
90
Pout, OUTPUT POWER (WATTS) CW
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 58 W Avg., and ηD = 35%.
Figure 12. Power Gain versus Output Power
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ "5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
0.001
0.0001
0
2
4
6
−60
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
PEAK−TO−AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−ACPR in 3.84 MHz
Integrated BW
−100
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MRFE6S9200HR3 MRFE6S9200HSR3
RF Device Data
Freescale Semiconductor
7
f = 960 MHz
Zload
Zo = 5 Ω
f = 800 MHz
Zsource
f = 960 MHz
f = 800 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg.
f
MHz
Zsource
W
Zload
W
800
4.23 - j4.85
0.70 - j0.33
820
4.46 - j4.69
0.76 - j0.13
840
4.39 - j4.75
0.78 - j0.02
860
4.06 - j4.68
0.79 + j0.09
880
3.70 - j4.45
0.81 + j0.16
900
3.55 - j4.04
0.86 + j0.21
920
3.57 - j3.71
0.89 + j0.27
940
3.67 - j3.47
0.89 + j0.31
960
3.67 - j3.45
0.82 + j0.33
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRFE6S9200HR3 MRFE6S9200HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
B
M
M
(INSULATOR)
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
ccc
M
T A
M
B
S
(LID)
aaa
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
C
E
T
A
(FLANGE)
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
2
bbb
bbb
M
M
D
T A
T A
M
M
B
B
M
M
(INSULATOR)
M
T A
M
B
R
ccc
M
N
ccc
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
CASE 465B - 03
ISSUE D
NI - 880
MRFE6S9200HR3
B
K
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
T A
M
S
(LID)
aaa
M
B
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465C - 02
ISSUE D
NI - 880S
MRFE6S9200HSR3
MRFE6S9200HR3 MRFE6S9200HSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2007
• Initial Release of Data Sheet
1
Dec. 2008
• Updated Full Frequency Band in Typical Performance bullet to f = 880 MHz to match actual production
test, p. 1
• Clarified 3 dB overdrive test condition for HV6E enhanced ruggedness parts, p. 1
• Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
• Changed maximum adjacent channel power ratio specification from - 38.5 dBc to - 36.5 dBc to match
actual production test limits, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Deleted output signal data from Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping,
Single - Carrier Test Signal, p. 7
MRFE6S9200HR3 MRFE6S9200HSR3
10
RF Device Data
Freescale Semiconductor
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MRFE6S9200HR3 MRFE6S9200HSR3
Document
Number:
RF
Device
Data MRFE6S9200H
Rev. 1, 12/2008
Freescale
Semiconductor
11