FREESCALE MRF8S8260HSR3

Document Number: MRF8S8260H
Rev. 1, 2/2012
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 790 to
895 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1500 mA, Pout = 70 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
850 MHz
21.3
36.2
6.5
--37.0
875 MHz
21.4
37.4
6.3
--36.7
895 MHz
21.1
37.5
6.2
--36.9
 Capable of Handling 7:1 VSWR, @ 32 Vdc, 875 MHz, 390 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
 Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW (1)
Features
 100% PAR Tested for Guaranteed Output Power Capability
 Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
 Internally Matched for Ease of Use
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C Operation
 Designed for Digital Predistortion Error Correction Systems
 Optimized for Doherty Applications
 In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 16.
MRF8S8260HR3
MRF8S8260HSR3
850--895 MHz, 70 W AVG. 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--04
NI--880
MRF8S8260HR3
CASE 465C--03
NI--880S
MRF8S8260HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
C
Case Operating Temperature
TC
150
C
Operating Junction Temperature (2,3)
TJ
225
C
CW
201
0.94
W
W/C
Characteristic
Symbol
Value (3,4)
Thermal Resistance, Junction to Case
Case Temperature 83C, 70 W CW, 28 Vdc, IDQ = 1500 mA, 895 MHz
Case Temperature 80C, 260 W CW(1), 28 Vdc, IDQ = 1500 mA, 895 MHz
RJC
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
0.36
0.31
Unit
C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
 Freescale Semiconductor, Inc., 2011--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S8260HR3 MRF8S8260HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 1380 Adc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.0
3.8
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.0 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Off Characteristics
On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 70 W Avg., f = 895 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
19.6
21.1
22.6
dB
Drain Efficiency
D
35.5
37.5
—
%
PAR
5.8
6.2
—
dB
ACPR
—
--36.9
--35.0
dBc
IRL
—
--16
--12
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 70 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
850 MHz
21.3
36.2
6.5
--37.0
--9
875 MHz
21.4
37.4
6.3
--36.7
--13
895 MHz
21.1
37.5
6.2
--36.9
--16
1. Part internally matched both on input and output.
(continued)
MRF8S8260HR3 MRF8S8260HSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 850--895 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
260 (1)
—
—
9.7
—
W
IMD Symmetry @ 80 W PEP, Pout where IMD Third
Order Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
60
—
MHz
Gain Flatness in 45 MHz Bandwidth @ Pout = 70 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.016
—
dB/C
P1dB
—
0.002
—
dB/C
Output Power Variation over Temperature
(--30C to +85C) (1)
MHz
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S8260HR3 MRF8S8260HSR3
RF Device Data
Freescale Semiconductor, Inc.
3
B1
C30
C11
--
C22
R2
C9
C23
R1
C10
C26
C12
C7 C8
C2
C27
C1*
C3
C4
C5 C6
CUT OUT AREA
C14 C15
C20*
C18
C16 C17
C19
C21
C13
C28
C24
C29
C25
C31
MRF8S8260H/HS
Rev. 1
*C1 and C20 are mounted vertically.
Figure 1. MRF8S8260HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S8260HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1
C2
C3
C4
C5 C7
C6, C8
C9, C20, C22, C23, C24, C25
C10
C11
C12, C13
C14, C16
C15, C17
C18
C19
C21
C26, C27, C28, C29
C30, C31
R1
R2
PCB
Description
RF Bead
2.7 pF Chip Capacitor
100 pF Chip Capacitor
2.4 pF Chip Capacitor
5.1 pF Chip Capacitor
3.3 pF Chip Capacitors
3.9 pF Chip Capacitors
43 pF Chip Capacitors
4.7 F, 100 V Chip Capacitor
22 F Electrolytic Capacitor
8.2 pF Chip Capacitors
3.9 pF Chip Capacitors
3.0 pF Chip Capacitors
0.7 pF Chip Capacitor
4.3 pF Chip Capacitor
0.1 pF Chip Capacitor
10 F, 50 V Chip Capacitors
470 F Electrolytic Capacitors
2.0 , 1/4 W Chip Resistor
1 K, 1/4 W Chip Resistor
0.030, r = 3.5
Part Number
BLM21PG300SN1D
ATC100B2R7BT500XT
ATC100B101JT500XT
ATC100B2R4JT500XT
ATC100B5R1CT500XT
ATC100B3R3CT500XT
ATC100B3R9CT500XT
ATC100B430JT500XT
GRM55ER72A475KA01B
UUD1V220MCL1GS
ATC100B8R2CT500XT
ATC100B3R9CT500XT
ATC100B3R0CT500XT
ATC100B0R7BT500XT
ATC100B4R3CT500XT
ATC100B0R1BT500XT
GRM55DR61H106KA88L
MCGPR63V477M13X26--RH
P2.0VCT--ND
CRCW12061K00FKEA
TC350
Manufacturer
Murata
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Murata
Nichicon
ATC
ATC
ATC
ATC
ATC
ATC
Murata
Multicomp
Panasonic
Vishay
Arlon
MRF8S8260HR3 MRF8S8260HSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
21
34
32
30
Gps
--36
0
19
--37
--4
18
--38
17
--39
20
ACPR
IRL
16
15
820
PARC
--40
--41
840
860
880
900
920
940
960
--8
--12
--16
--20
980
--1
--1.2
--1.4
--1.6
PARC (dB)
22
ACPR (dBc)
Gps, POWER GAIN (dB)
23
36
VDD = 28 Vdc, Pout = 70 W (Avg.), IDQ = 1500 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
D
D, DRAIN
EFFICIENCY (%)
38
24
IRL, INPUT RETURN LOSS (dB)
25
--1.8
--2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 70 Watts Avg.
--20
VDD = 28 Vdc, Pout = 80 W (PEP), IDQ = 1500 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 875 MHz
IM3--U
--30
IM3--L
--40
IM5--U
IM5--L
--50
IM7--L
--60
IM7--U
--70
1
100
10
TWO--TONE SPACING (MHz)
21.5
0
21
20.5
20
19.5
19
ACPR
--1 dB = 63.8 W
--25
50
--30
D
--1
44
--2
38
Gps
--2 dB = 89.6 W
--3
32
--3 dB = 119.8 W
VDD = 28 Vdc, IDQ = 1500 mA, f = 875 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
--4
--5
56
40
60
80
100
PARC
120
--35
--40
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
22
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
--45
26
--50
20
140
--55
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S8260HR3 MRF8S8260HSR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
875 MHz
875 MHz
895 MHz
Gps, POWER GAIN (dB)
21.5
Gps
20
850 MHz
895 MHz
18.5
17
1
55
--10
33
ACPR
22
850 MHz
895 MHz
875 MHz
15.5
14
0
44
D
VDD = 28 Vdc, IDQ = 1500 mA
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
66
10
11
0
400
100
--20
--30
--40
ACPR (dBc)
850 MHz
D, DRAIN EFFICIENCY (%)
23
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
24
20
5
16
0
12
--5
IRL
8
--10
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1500 mA
4
0
650
800
725
875
IRL (dB)
GAIN (dB)
Gain
950
--15
1100
1025
1175
--20
1250
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S8260HR3 MRF8S8260HSR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1500 mA, Pout = 70 W Avg.
f
MHz
Zsource

Zload

820
3.19 -- j1.47
1.38 -- j0.80
840
2.98 -- j1.61
1.37 -- j0.52
860
2.78 -- j1.75
1.38 -- j0.29
880
2.50 -- j1.87
1.44 -- j0.14
900
2.20 -- j1.92
1.48 -- j0.01
920
1.96 -- j1.79
1.52 + j0.12
940
1.82 -- j1.58
1.59 + j0.32
960
1.74 -- j1.35
1.68 + j0.51
980
1.68 -- j1.12
1.77 + j0.61
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S8260HR3 MRF8S8260HSR3
RF Device Data
Freescale Semiconductor, Inc.
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
63.5
Pout, OUTPUT POWER (dBm)
62
Ideal
60.5
59
57.5
Actual
851 MHz
56
54.5
53
895 MHz
880 MHz
865 MHz
865 MHz
51.5
880 MHz
50
851 MHz
895 MHz
48.5
47
28
29.5 31
32.5 34
35.5
37
38.5
40 41.5
43
44.5
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
851
359
55.5
482
56.8
865
366
55.6
485
56.9
880
362
55.6
477
56.8
895
365
55.6
478
56.8
Test Impedances per Compression Level
f
(MHz)
Zsource

Zload

851
P1dB
1.46 -- j2.70
3.02 + j0.04
865
P1dB
1.85 -- j3.04
2.92 + j0.03
880
P1dB
2.20 -- j3.31
2.85 + j0.70
895
P1dB
2.53 -- j3.58
2.50 + j0.76
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S8260HR3 MRF8S8260HSR3
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8S8260HR3 MRF8S8260HSR3
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8S8260HR3 MRF8S8260HSR3
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8S8260HR3 MRF8S8260HSR3
RF Device Data
Freescale Semiconductor, Inc.
11
MRF8S8260HR3 MRF8S8260HSR3
12
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8S8260H and MRF8S8260HS parts will be available for 2 years after release of
MRF8S8260H and MRF8S8260HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered
in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and
reel option will be offered MRF8S8260H and MRF8S8260HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2011
 Initial Release of Data Sheet
1
Feb. 2012
 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2.
 Replaced Case Outline 465B--03, Issue D, with 465B--04, Issue F, p. 1, 9--10. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension K in mm from 4.44--5.21 to 4.45--5.21, changed
dimension M in mm from 22.15--22.55 to 22.15--22.56, changed dimension N in mm from 19.3--22.6 to
22.12--22.58, changed dimension Q in mm from 3--3.51 to 3.00--3.51, changed dimension R and S in mm
from 13.1--13.3 to 13.08--13.34.
 Replaced Case Outline 465C--02, Issue D, with 465C--03, Issue E, p. 1, 11--12. Deleted Style 1 pin note on
Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in
mm from 1.45--1.7 to 1.45--1.70, changed dimension M in mm from 22.15--22.55 to 22.15--22.56, changed
dimension N in mm from 19.3--22.6 to 22.12--22.58, changed dimension R and S in mm from 13.1--13.3 to
13.08--13.34.
MRF8S8260HR3 MRF8S8260HSR3
RF Device Data
Freescale Semiconductor, Inc.
13
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MRF8S8260HR3 MRF8S8260HSR3
Document Number: MRF8S8260H
Rev. 1, 2/2012
14
RF Device Data
Freescale Semiconductor, Inc.