2DB1132P/Q/R 32V PNP SURFACE MOUNT TRANSISTOR IN SOT-89 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -32V Max Continuous Current IC = -1A Epitaxial Planar Die Construction Complementary NPN Type Available (2DD1664) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free, “Green” Devices (Note 2) Case: SOT-89 Case material: molded Plastic. “Green” molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.055 grams (Approximate) SOT-89 C B E Top View Device Symbol Pin out – Top view Ordering Information Product 2DB1132P-13 2DB1132Q-13 2DB1132R-13 Notes: Grade Commercial Commercial Commercial Marking P13P P13Q P13R Reel size (inches) 13 13 13 Tape width (mm) 12 12 12 Quantity per reel 2,500 2,500 2,500 1. No purposefully added lead. 2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information (Top View) YWW P13x 2DB1132P/Q/R Document number: DS31142 Rev: 5 - 2 P13x = Product Type Marking Code: Where P13P = 2DB1132P P13Q = 2DB1132Q P13R = 2DB1132R YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 1 of 6 www.diodes.com September 2011 © Diodes Incorporated 2DB1132P/Q/R Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current (Note 4) Symbol VCBO VCEO VEBO IC ICM Value -40 -32 -5 -1 -2 Unit V V V A A Value 1 125 22 -55 to +150 Unit W °C/W °C/W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Thermal Resistance, Junction to Leads (Note 5) Operating and Storage Temperature Range Notes: Symbol PD RθJA RθJL TJ, TSTG 3. For a device surface mounted on FR-4 PCB with minimum suggested pad layout; high coverage of single sided 1 oz copper, in still air conditions 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%. 5. Thermal resistance from junction to solder-point (at the end of the collector lead). PD, POWER DISSIPATION (W) 1.0 0.8 0.6 0.4 0.2 0 0 2DB1132P/Q/R Document number: DS31142 Rev: 5 - 2 25 50 100 125 75 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 2 of 6 www.diodes.com 150 September 2011 © Diodes Incorporated 2DB1132P/Q/R Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current 2DB1132P Static Forward Current Transfer 2DB1132Q Ratio (Note 6) 2DB1132R Collector-Emitter saturation Voltage (Note 6) Transition frequency Output Capacitance Notes: Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min -40 -32 -5 82 120 180 - Typ -125 190 12 Max -0.5 -0.5 180 270 390 -500 30 Unit V V V µA µA Test Condition IC = -50µA IC = -1mA IE = -50µA VCB =-20V VEB = -4V - IC = -100mA, VCE = -3V mV MHz pF IC =-500mA, IB = -50mA IE = 50mA, VCE = -5V,f=30MHz IE = 0A, VCB = -10V,f=1MHz 6. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2% Electrical Characteristics 1.6 VCE = -3V 500 1.4 TA = 150°C 1.2 400 TA = 85°C 1.0 300 0.8 TA = 25°C 0.6 200 TA = -55°C 0.4 100 0.2 0 2DB1132P/Q/R Document number: DS31142 Rev: 5 - 2 0 0.001 3 of 6 www.diodes.com 0.01 0.1 1 10 September 2011 © Diodes Incorporated 2DB1132P/Q/R Electrical Characteristic - (cont.) IC/IB = 10 TA = -55°C TA = 25°C TA = 150°C TA = 85°C TA = 85°C TA = 25°C TA = 150°C TA = -55°C VCE = -3V 40 30 TA = -55°C 20 TA = 25°C TA = 85°C 10 TA = 150°C IC/IB = 10 0 250 200 150 100 50 VCE = -5V f = 30MHz -IE, EMITTER CURRENT Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current 2DB1132P/Q/R Document number: DS31142 Rev: 5 - 2 4 of 6 www.diodes.com September 2011 © Diodes Incorporated 2DB1132P/Q/R Package Outline Dimensions R0 D1 .2 00 C E SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm H L B e B1 e1 8° (4 X ) A D Suggested Pad Layout X1 X2 (2x) Y1 Y3 Y4 Y2 Y C Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X (3x) 2DB1132P/Q/R Document number: DS31142 Rev: 5 - 2 5 of 6 www.diodes.com September 2011 © Diodes Incorporated 2DB1132P/Q/R IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com 2DB1132P/Q/R Document number: DS31142 Rev: 5 - 2 6 of 6 www.diodes.com September 2011 © Diodes Incorporated