MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure:NF=1.5dB(Typ.) (@ f=1GHz) • High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz) 1.8±0.1 • 2.4±0.1 3 1 2 0.95 Marking 0.95 2.9±0.2 A -0.05 0.8+0.08 3 T6 1 1. 2. 3. 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 12 V Collector-emitter voltage VCEO 6 V Emitter-base voltage VEBO 2 V Collector-current IC 80 mA Base-current IB 10 mA PC(Note1) 320 mW Tj 150 °C Tstg −55 to 150 °C Collector power dissipation Junction temperature Storage temperature range Base Emitter Collector SOT23F JEDEC JEITA TOSHIBA Weight: 11 mg (typ.) - - - Note 1: The device is mounted on a FR4 board (20 mm x 25 mm x 1.55 mm (t)) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-08-18 MT3S19R Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Symbol fT VCE=5V,IC=50mA Noise figure Typ Max Unit 11.5 13.5 ⎯ GHz VCE=5V,IC=50mA,f=500MHz ⎯ 18.5 ⎯ 2 |S21e| (2) VCE=5V,IC=50mA,f=1GHz 11 13 ⎯ NF VCE=5V,IC=20mA,f=1GHz ⎯ 1.5 1.9 dB 29.5 33.5 ⎯ dBmW Min Typ Max Unit rd 3 order intermodulation distortion output intercept point Min 2 |S21e| (1) Insertion gain Test Condition OIP3 VCE=5V,IC=50mA,f=500MHz, Δf=1MHz dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB=6V,IE=0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB=1V,IC=0 ⎯ ⎯ 100 nA DC current gain hFE VCE=5V,IC=50mA 100 ⎯ 250 ⎯ Reverse transfer capacitance Cre VCB=5V,IE=0, f=1MHz (Note3) ⎯ 0.75 1 pF Note 3: Cre is measured using a 3-terminal method with capacitance bridge Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 2 2010-08-18 MT3S19R hFE-IC IC-VBE 100 COMMON EMITTER VCE=5V Ta=25℃ Collector-current IC(mA) 100 COMMON EMITTER VCE=5V Ta=25℃ 10 1 0.1 0.01 0.001 10 1 10 0 100 Collector-current IC(mA) 0.2 900μA 800μA 700μA 600μA Transition frequency fT(GHz) Collector-current IC(mA) 1 16 COMMON EMITTER Ta=25℃ 100 500μA 400μA 70 60 300μA 50 40 200μA 30 20 100μA 10 0 0 1 2 3 4 5 6 7 VCE=5V f=1GHz Ta=25℃ 14 12 10 8 6 4 2 0 1 8 Collector-emitter voltage VCE(V) 10 NF, Ga -IC 6 22 VCE=5V Ta=25℃ 20 Noise figure NF(dB) f=500MHz 16 14 12 10 f=1000MHz 8 6 4 14 VCE=5V f=1GHz Ta=25℃ 5 18 100 Collector-current IC(mA) |S21e|2-IC Insertion gain |S21e|2(dB) 0.8 fT-IC 110 80 0.6 Base-emitter voltage VBE(V) IC-VCE 90 0.4 Ga 12 4 10 3 8 6 2 NF 4 1 2 0 0 1 10 1 100 Collector-current IC(mA) 10 Associated gain Ga(dB) DC current gain hFE 1000 2 100 Collector-current IC(mA) 3 2010-08-18 MT3S19R IC=40mA Ta=25℃ 20 18 16 14 12 10 8 VCE=5V VCE=3V 1 10 VCE=5V 34 32 VCE=3V 30 28 26 24 22 20 10 100 Collector power dissipation PC(mW) PC-Ta Cob 1.4 1.2 1 Cre 0.6 0.4 0.2 0 0.1 36 Cre,Cob-VCB IE=0 f=1MHz Ta=25℃ 0.8 Pin=-15dBmW f=500MHz(⊿1MHz) Ta=25℃ 38 Collector-current IC(mA) 1.8 1.6 40 Frequency (GHz) 2 Output capacitance Cob(pF) Reverse transfer capacitance Cre(pF) 0.1 output intercept point OIP3(dBmW) 32 30 28 26 24 22 OIP3-IC Third order intermodulation distortion Insertion gain |S21e|2(dB) |S21e|2-Freq. 1 10 Collector-base voltage VCB(V) 400 The device is mounted on a FR4 (20mmx25mmx1.55mmt) 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Ambient temperature Ta(°C ) 4 2010-08-18 MT3S19R RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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