Bulletin PD-20877 11/04
MURS120PbF
Ultrafast Rectifier
Features
•
•
•
•
•
IF(AV) = 1.0Amp
VR = 200V
Ultrafast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
Lead-Free ("PbF" suffix)
Description/ Applications
International Rectifier's MUR.. series are the state of the art Ultra fast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultra fast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
free-wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
Max
Units
VRRM
Peak Repetitive Peak Reverse Voltage
200
V
IF(AV)
Average Rectified Forward Current, T L = 158°C
1
A
IFSM
Non Repetitive Peak Surge Current
TJ, TSTG
Operating Junction and Storage Temperatures
40
- 65 to 175
°C
Case Styles
MURS120PbF
SMB
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1
MURS120PbF
Bulletin PD-20877 11/04
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBR, Vr
Breakdown Voltage,
Blocking Voltage
200
VF
Forward Voltage
IR
CT
Reverse Leakage Current
Junction Capacitance
-
-
V
I R = 100µA
-
0.83 0.875
V
I F = 1A
-
0.65 0.71
V
I F = 1A, TJ = 150°C
-
0.1
2
µA
V R = VR Rated
-
11
50
µA
TJ = 150°C, VR = VR Rated
-
12
-
pF
V R = 200V
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
t rr
Min Typ Max Units Test Conditions
Reverse Recovery Time
-
-
35
-
-
25
ns
I F = 1.0A, di F /dt = 50A/µs, V R = 30V
I F = 0.5A, I R = 1.0A, I REC = 0.25A
Thermal - Mechanical Characteristics
Parameters
Min
Typ
Max
Units
°C
TJ
Max. Junction Temperature Range
-
-
175
TStg
Max. Storage Temperature Range
- 65
-
175
RthJL
Thermal Resistance, Junction to Lead
-
-
21
Wt
Weight
-
0.1
-
g
-
0.07
-
(oz)
wt
Approximate Weight
Case Style
Device Marking
2
0.10 (0.003)
°C/W
g (oz.)
SMB
IRU120
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MURS120PbF
Bulletin PD-20877 11/04
10
(µA)
100
Tj = 175˚C
150˚C
10
Reverse Current - I
75˚C
0.1
50˚C
0.01
25˚C
0.001
T = 175˚C
J
0
0.6
0.8
1
1.2
100
150
200
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
T = 25˚C
J
0.1
0.4
50
Reverse Voltage - VR (V)
T = 150˚C
J
1
100˚C
1
100
Tj = 25˚C
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
R
125˚C
10
1.4
0
40
80
120
160
200
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Thermal Impedance Z
thJL
(°C/W)
100
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t1
t2
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC+ Tc
0.1
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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MURS120PbF
Bulletin PD-20877 11/04
1
Average Power Loss ( Watts )
Allowable Lead Temperature (°C)
180
170
DC
160
Square wave (D = 0.50)
Rated Vr applied
150
see note (3)
140
0.8
RMS Limit
0.6
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
0.4
0.2
0
0
0.4
0.8
1.2
0
1.6
Average Forward Current - I F (AV) (A)
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
Average Forward Current - I F (AV) (A)
Fig. 5 - Max. Allowable Lead Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
100
10
Tj = 25˚C
Qrr ( nC )
trr ( ns )
Tj = 25˚C
10
Vr = 30V
If = 1A
Vr = 30V
If = 1A
1
100
1
100
1000
Fig. 7 - Typical Reverse Recovery vs. di
1000
di F /dt (A/µs )
di F /dt (A/µs )
F
/dt
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x V FM @ (I F(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); I R @ VR1 = rated VR
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MURS120PbF
Bulletin PD-20877 11/04
Outline Table
CATHODE
Device Marking: IR1C
2.15 (.085)
1.80 (.071)
1
3.80 (.150)
3.30 (.130)
1
4.70 (.185)
POLARITY
ANODE
2
2 PART NUMBER
4.10 (.161)
2.5 TYP.
(.098 TYP.)
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
2.0 TYP.
(.079 TYP.)
SOLDERING PAD
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IRU120
VOLTAGE
CURRENT
PROCESS TYPE
IR LOGO
PYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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MURS120PbF
Bulletin PD-20877 11/04
Tape & Reel Information
Dimensions in millimeters and (inches)
Ordering Information Table
Device Code
MUR
S
1
20
TR
PbF
1
2
3
4
5
6
1
-
Ultrafast MUR Series
2
-
Package Style: SMB
3
-
Current Rating (1 = 1A)
4
-
Voltage Rating (20 = 200V)
5
-
y none = Box (1000 pieces)
y TR = Tape & Reel (3000 pieces)
6
-
y none = Standard Production
y PbF = Lead-Free
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/04
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