SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad. (0.012) 3 2 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.02 ± 0.10 (0.04 ± 0.004) • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS A • HIGH SPEED SATURATED SWITCHING 1.40 (0.055) max. APPLICATIONS: SOT23 CERAMIC (LCC1 PACKAGE) PAD 1 – Base Underside View PAD 2 – Emitter PAD 3 – Collector Hermetically sealed surface mount version of the popular 2N2907A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Rja Tstg,Tj Semelab plc. Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Storage Temperature, Operating Temp Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk –60V –60V –5V 600mA 350mW 2.0mW / °C 350°C / W –55 to 200°C Prelim.3/00 SEME 2N2907ACSM LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 10mA –60 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 10mA –60 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 10mA IC = 0 –5 V ICEX* Collector Cut-off Current VCE = 30V VBE = 0.5V 50 ICBO* Collector – Base Cut-off Current IE = 0 VCB = 50V 0.01 IBEO Base Cut-off Current VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* TC = 125°C DC Current Gain nA m 10 VCE = 30V VBE = 0.5V 50 IC = 150mA IB = 15mA –0.4 IC = 500mA IB = 50mA –1.6 IC = 150mA IB = 15mA –1.3 IC = 500mA IB = 50mA –2.6 IC = 0.1mA VCE = 10V 75 IC = 1mA VCE = 10V 100 IC = 10mA VCE = 10V 100 IC = 150mA VCE = 10V 100 IC = 500mA VCE = 10V 50 A nA V V — 300 * Pulse test tp = 300ms , d £ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 50mA VCE = 20V f = 100MHz 200 MHz Cob Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8 pF Cib Input Capacitance VBE = 2V IC = 0 f = 1.0MHz 30 pF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit ton Turn-on Time VCC = 30V 26 45 td Delay Time IC = 150mA 6.0 10 tr Rise Time IB1 = 15mA 20 40 toff Turn-off Time VCC = 6V 70 100 ts Storage Time IC = 150mA 50 80 tf Fall Time IB1 = IB2 = 15mA 20 30 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk ns ns Prelim.3/00