2N2369ADCSM DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm (inches) FEATURES 3 1 4 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) • DUAL SILICON PLANAR EPITAXIAL DUAL NPN TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) 0.23 rad. (0.009) A= • SCREENING OPTIONS AVAILABLE 1.27 ± 0.13 (0.05 ± 0.005) APPLICATIONS: LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 Hermetically sealed dual surface mount dual version of the popular 2N2369A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) PER SIDE VCBO Collector – Base Voltage 40V VCEO Collector – Emitter Voltage 15V VEBO Emitter – Base Voltage 4.5V IC Collector Current PD Total Device Dissipation 200mA @ TA =25°C 360mW 500mW 2.06mW / °C 2.85mW / °C @ TC =25°C 680mW/°C 800mW/°C Derate above 25°C 3.88mW/°C 4.57mW/°C Derate above 25°C PD TSTG , TJ Semelab plc. Total Device Dissipation TOTAL DEVICE Operating and Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk –65 to +200°C Prelim. 3/00 2N2369ADCSM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA 15 V V(BR)CBO Collector – Base Breakdown Voltage IC = 10mA 40 V V(BR)EBO Emitter – Base Breakdown Voltage IE = 10mA 4.5 V ICES Collector – Emitter Cut-off Current VCE = 20V 0.40 VCE = 10V 0.30 TA = +150°C ICBO Collector – Base Cut-off Current IEBO Emitter – Base Cut-off Current VCE(sat) Collector – Emitter Saturation Voltage hFE* Base – Emitter Saturation Voltage Current Gain |hfe| Magnitude of hfe Cob Output Capacitance 0.20 TA = +125°C 30 VEB = 4V 0.25 IB = 1mA 0.20 TA = +150°C 0.30 IC = 30mA IB = 3mA 0.25 IC = 100mA IB = 10mA 0.43 IC = 10mA VBE(sat) 30 VCB = 20V IC = 10mA IB = 1mA TA = +25°C 0.70 TA = +150°C 0.59 1.02 IC = 30mA IB = 3mA 0.90 IC = 100mA IB = 10mA 1.20 IC = 10mA VCE = 0.35V 40 120 IC = 30mA VCE = 0.40V 30 120 IC = 10mA VCE = 1V 40 120 TA = –55°C 20 IC = 100mA VCE = 1V 20 120 IC = 10mA VCE = 10V 5 10 VCB = 5V IE = 0 f = 100kHz to 1MHz VEB = 0.5V Cib Input Capacitance ts Storage Time ton Turn–On Time IC = 10mA toff Turn–Off Time IB1 = 3mA IC = 0 f = 100kHz to 1MHz IC = 10mA IB1 = –IB2 = 10mA mA V V — — 4 pF 5 13 12 IB2 = –1.5mA mA 0.85 TA = –55°C f = 100MHz mA 18 ns ns * Pulse Test: tp £ 300ms, d £ 2%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 3/00