NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N01M0818L1A
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
128Kx8 bit
Overview
Features
The N01M0818L1A is an integrated memory
device intended for non life-support (Class 1 or
2) medical applications. This device comprises a
1 Mbit Static Random Access Memory organized
as 131,072 words by 8 bits. The device is designed
and fabricated using NanoAmp’s advanced CMOS
technology with reliability inhancements for
medical users. The base design is the same as
NanoAmp’s N01M0818L2A, which has further
reliability processing for life-support (Class 3)
medical applications. The device operates with two
chip enable (CE1 and CE2) controls and output
enable (OE) to allow for easy memory expansion.
The N01M0818L1A is optimal for various
applications where low-power is critical such as
battery backup and hand-held devices. The device
can operate over a very wide temperature range of
-40oC to +85oC and is available in JEDEC
standard packages compatible with other standard
256Kb x 8 SRAMs
• Single Wide Power Supply Range
1.4 to 2.3 Volts - STSOP package
• Dual Power Supply - Die Only
1.4 to 2.3 Volts - VCC
1.4 to 3.6 Volts - VCCQ
• Very low standby current
200nA maximum at 2.0V and 37 deg C
• Very low operating current
1 mA at 2.0V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Automatic power down to standby mode
• Special Processing to reduce Soft Error Rate
(SER)
Product Family
Part Number
Package Type
N01M0818L1AN
32 - STSOP I
N01M0818L1AD Known Good Die
Operating
Temperature
Power
Supply (Vcc)
Speed
Standby
Current
(ISB), Max
Operating
Current (Icc),
Max
-40oC to +85oC
1.4V - 2.3V
85ns @ 1.7V
150ns @ 1.4V
20 µA
2.5 mA @ 1MHz
Pin Configuration
Pin Descriptions
Pin Name
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N01M0818L1A
STSOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
A3
Pin Function
A0-A16
Address Inputs
WE
CE1, CE2
OE
I/O0-I/O7
Write Enable Input
Chip Enable Input
Output Enable Input
VCCQ
Output Power (die only)
VCC
Power
VSS
Ground
Data Inputs/Outputs
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
N01M0818L1A
NanoAmp Solutions, Inc.
Functional Block Diagram
VCCQ
VCC
VSS
Word
Address
Decode
Logic
Address
Inputs
A4 - A16
Page
Address
Decode
Logic
CE1
CE2
WE
OE
Control
Logic
8K Page
x 16 word
x 8 bit
RAM
Word Mux
Address
Inputs
A0 - A3
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
Functional Description
CE1
CE2
WE
OE
I/O0 - I/O7
MODE
POWER
H
X
X
X
High Z
Standby1
Standby
Standby
X
L
X
X
High Z
Standby1
Data In
Write2
Active
L
H
L
X2
L
H
H
L
Data Out
Read
Active
L
H
H
H
High Z
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Max
Unit
25oC
Min
8
pF
8
pF
Input Capacitance
CIN
VIN = 0V, f = 1 MHz, TA =
I/O Capacitance
CI/O
VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
N01M0818L1A
NanoAmp Solutions, Inc.
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 4.5
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
–40 to 125
o
Operating Temperature
TA
-40 to +85
oC
Soldering Temperature and Time
TSOLDER
10sec(Lead only)
oC
240oC,
C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Min.
Typ1
Max
Unit
1.4
1.8
2.3
V
VCCQ > or = VCC
1.4
1.8
3.6
V
Chip Disabled3
1.2
Item
Symbol
Core Supply Voltage
VCC
I/O Supply Voltage
VCCQ
Data Retention Voltage
VDR
Input High Voltage
VIH
VCCQ-0.6
VCCQ+0.3
V
Input Low Voltage
VIL
–0.3
0.6
V
Output High Voltage
VOH
IOH = 0.2mA
Output Low Voltage
VOL
IOL = -0.2mA
0.2
V
Input Leakage Current
ILI
VIN = 0 to VCC
0.1
µA
Output Leakage Current
ILO
OE = VIH or Chip Disabled
0.1
µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
1.5
2.5
mA
Read/Write Operating Supply Current
@ 85 ns Cycle Time2
ICC2
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
10.0
13.0
mA
Page Mode Operating Supply Current
@ 85 ns Cycle Time2 (Refer to Power
Savings with Page Mode Operation
diagram)
ICC3
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
3.5
mA
Read/Write Quiescent Operating Supply Current3
ICC4
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0,
f=0
0.2
µA
ISB1
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 2.3 V
0.2
20.0
µA
0.1
1.0
µA
Standby
Current3
Data Retention Current3
IDR
Test Conditions
VCC = 1.8V, VIN = VCC or 0
Chip Disabled, tA= 85oC
V
VCCQ–0.2
V
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all
inputs must be within 0.2 volts of either VCC or VSS.
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
N01M0818L1A
NanoAmp Solutions, Inc.
Power Savings with Page Mode Operation (WE = VIH)
Page Address (A4 - A16)
Word Address (A0 - A3)
Open page
Word 1
Word 2
...
Word 16
CE1
CE2
OE
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
N01M0818L1A
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 30pF
Operating Temperature
-40 to +85 oC
Timing VCCQ > or = VCC
Item
Symbol
Read Cycle Time
tRC
VCC = 1.4 - 2.3 V
Min.
Max.
150
VCC = 1.7 - 2.3 V
Min.
Max.
Units
85
ns
Address Access Time
tAA
150
85
ns
Chip Enable to Valid Output
tCO
150
85
ns
Output Enable to Valid Output
tOE
50
40
ns
Chip Enable to Low-Z output
tLZ
20
10
ns
Output Enable to Low-Z Output
tOLZ
20
5
ns
Chip Disable to High-Z Output
tHZ
0
30
0
15
ns
Output Disable to High-Z Output
tOHZ
0
30
0
15
ns
Output Hold from Address Change
tOH
20
10
ns
Write Cycle Time
tWC
150
85
ns
Chip Enable to End of Write
tCW
75
50
ns
Address Valid to End of Write
tAW
75
50
ns
Write Pulse Width
tWP
50
40
ns
Address Setup Time
tAS
0
0
ns
Write Recovery Time
tWR
0
0
ns
Write to High-Z Output
tWHZ
Data to Write Time Overlap
tDW
50
40
ns
Data Hold from Write Time
tDH
0
0
ns
End Write to Low-Z Output
tOW
10
5
ns
30
15
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
ns
5
N01M0818L1A
NanoAmp Solutions, Inc.
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC
Address
tAA
tHZ
CE1
tCO
CE2
tLZ
tOHZ
tOE
OE
tOLZ
Data Out
High-Z
Data Valid
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6
N01M0818L1A
NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
tWC
Address
tWR
tAW
CE1
tCW
CE2
tAS
tWP
WE
tDW
High-Z
tDH
Data Valid
Data In
tWHZ
tOW
High-Z
Data Out
Timing Waveform of Write Cycle (CE1 Control)
tWC
Address
tWR
tAW
CE1
(for CE2 Control, use
inverted signal)
tAS
tCW
tWP
WE
tDW
Data Valid
Data In
tLZ
Data Out
tDH
tWHZ
High-Z
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
N01M0818L1A
NanoAmp Solutions, Inc.
32-Lead STSOP-I Package (N32)
11.80±0.10
0.50mm REF
8.0±0.10
0.27
0.17
13.40±0.20
SEE DETAIL B
DETAIL B
1.10±0.15
0o-8o
0.20
0.00
0.80mm REF
Note:
1. All dimensions in millimeters
2. Package dimensions exclude molding flash
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8
N01M0818L1A
NanoAmp Solutions, Inc.
Ordering Information
N01M0818L1AX-XX X
Temperature
Performance
Package Type
I = Industrial, -40°C to 85°C
85 = 85ns @ 1.8V
N = 32-pin STSOP I
D = Known Good Die
Revision History
Revision #
Date
Change Description
01
11/01/02
Initial Release
© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23205-01 11/01/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
9