UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES 1 TO-220 1 * RDS(ON) = 3.8Ω@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness TO-252 TO-220F *Pb-free plating product number: 2N60L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Order Number Package Normal Lead Free Plating 2N60-TA3-T 2N60L-TA3-T TO-220 2N60-TF3-T 2N60L-TF3-T TO-220F 2N60-TM3-T 2N60L-TM3-T TO-251 2N60-TN3-R 2N60L-TN3-R TO-252 2N60-TN3-T 2N60L-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source 2N60L-TA3-T Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube (1)Packing Type (1) T: Tube, R: Tape Reel (2)Package Type (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN 3: TO-252 (3) L: Lead Free Plating, Blank: Pb/Sn (3)Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-053,E 2N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) SYMBOL VDSS VGSS IAR RATINGS UNIT 600 V ±30 V 2.0 A TC = 25°C 2.0 A ID Drain Current Continuous TC = 100°C 1.26 A Drain Current Pulsed (Note 2) IDP 8.0 A Repetitive(Note 2) EAR 4.5 mJ Avalanche Energy Single Pulse(Note 3) EAS 140 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TC = 25°C 45 W Total Power Dissipation PD Derate above 25°C 0.36 W/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER PACKAGE TO-251 TO-252 TO-220 TO-220F TO-251 TO-252 TO-220 TO-220F Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case SYMBOL θJA θJc RATINGS 112 112 54 54 12 12 4 4 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TJ =25℃, unless Otherwise specified.) PARAMETER Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Reverse Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-Body Leakage Current SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS(TH) VDS = VGS, ID = 250µA RDS(ON) VGS = 10V, ID =1A gFS VDS = 50V, ID = 1A (Note 1) CISS COSS CRSS VDS =25V, VGS =0V, f =1MHz TYP MAX UNIT 10 100 100 -100 V µA µA nA nA 600 △BVDSS/ ID = 250 µA △T J UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 0.4 2.0 3.8 2.25 270 40 5 V/℃ 4.0 5 V Ω S 350 50 7 pF pF pF 2 of 8 QW-R502-053,E 2N60 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Switching Characteristics Turn-On Delay Time tD (ON) Rise Time tR VDD =300V, ID =2.4A, RG=25Ω Turn-Off Delay Time tD(OFF) (Note 1,2) Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=2.4A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM VGS = 0 V, ISD = 2.4A, Reverse Recovery Time tRR di/dt = 100 A/µs (Note1) Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% 2. Essentially Independent of Operating Temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 10 25 20 25 9.0 1.6 4.3 30 60 50 60 11 ns ns ns ns nC nC nC 1.4 2.0 8.0 V A A ns µC 180 0.72 3 of 8 QW-R502-053,E 2N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VGS VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-053,E 2N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% t D(ON ) Pulse Width ≤ 1μs tD (OFF) tF tR Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Same Type as D.U.T. 50kΩ 12V 0.2μF Fig. 2B Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT VG 3mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD 10V VDD D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IAS tp Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-053,E 2N60 Power MOSFET TYPICAL CHARACTERISTICS On-Region Characteristics Transfer Characteristics V GS 15.0V 10 .0V 8 .0V 7 .0V 6 .5V 6 .0V Bottorm : 5.5V VDS=50V 250μs Pulse Test Drain Current, I D (A) 10 0 Drain Current, ID (A) Top: 10 -1 10 250μs Pulse Test TC=25℃ -2 10-1 85℃ 0 10 -20℃ -1 10 2 101 100 25℃ 4 VGS=0V 250μs Pulse Test TJ=25℃ VGS=10V VGS=20V 8 6 4 2 0 0 1 3 2 4 5 100 125℃ 10-1 6 0.2 Ciss=CGS+CGD (CDS=shorted) Coss=CDS+CGD Crss=CGD 300 Coss 200 100 0 Crss VGS=0V f = 1MHz -1 10 0 10 1 10 Drain-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.6 0.8 1.0 1.2 1.4 1.6 12 VDS=120V Gate-Source Voltage, VGS (V) Capacitance (pF) Ciss 0.4 Gate Charge vs. Gate Charge Voltage Capacitance vs. Drain-Source Voltage 400 25℃ Source-Drain Voltage, VSD (V) Drain Current, ID (A) 500 10 Body Diode Forward Voltage Variationvs. Source Current and Temperature Reverse Drain Current, IDR (A) Drain-Source On-Resistance, R DS(ON) (Ω) On-Resistance Variation vs. Drain Current and Gate Voltage 10 8 Gate-Source Voltage, VGS (V) Drain-Source Voltage, VDS (V) 12 6 10 VDS=300V VDS=480V 8 6 4 2 0 ID=2.4A 0 2 4 6 8 Total Gate Charge, QG (nC) 1 0 6 of 8 QW-R502-053,E 2N60 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) 1.2 On -Resistance vs. Temperature VGS=10V ID=250μA Drain-Source On-Resistance, R DS(ON) (Normalized) Drain-Source Breakdown Voltage, VDSS (Normalized) Breakdown Voltage vs. Temperature 1.1 1.0 0.9 0.8 -100 -50 50 0 100 2.0 1.5 1.0 0.5 0.0 -100 -50 200 150 3.0 V =10V GS ID=4.05A 2.5 Junction Temperature, TJ (℃) 100μs 10μs 1ms 10m Ds C 100 TC=25℃ TJ=125℃ Single Pulse 101 102 103 Drain Current, ID (A) Drain Current, ID (A) 10 1 100 100 200 150 2.0 Operation in This Area is Limited by RDS(on) 10 -2 50 Max. Drain Current vs. Case Temperature Max. Safe Operating Area 10 -1 0 Junction Temperature, T J (℃) 1.5 1.0 0.5 0.0 25 50 75 100 125 150 Case Temperature, TC (℃) Drain-Source Voltage, VDS (V) Thermal Response, θJC (t) Thermal Response 100 D=0.5 θJC (t) = 2.78℃/W Max. Duty Factor, D=t1/t2 TJM -TC=PDM×θJC (t) 0.2 0.1 0.05 -1 10 0.02 PDM 0.01 t1 Single pulse t2 10-5 10-4 10-3 10-2 10-1 0 10 1 10 Square Wave Pulse Duration, t1 (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-053,E 2N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-053,E