UNISONIC TECHNOLOGIES CO., LTD 60N06 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) = 18mΩ @VGS = 10 V * Ultra low gate charge ( typical 39nC ) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 115pF ) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 60N06L-TA3-T 60N06G-TA3-T TO-220 60N06L-TF3-T 60N06G-TF3-T TO-220F 60N06L-TQ2-R 60N06G-TQ2-R TO-263 60N06L-TQ2-T 60N06G-TQ2-T TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd. Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tape Reel Tube 1 of 8 QW-R502-121.C 60N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGS ±20 V TC = 25°C 60 A Continuous Drain Current ID TC = 100°C 39 A Drain Current Pulsed (Note 2) IDM 120 A 1000 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 180 mJ TO-220 100 Power Dissipation PD TO-220F 70.62 W (TC=25°C) TO-263 54 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature 3. L=0.61mH, IAS=60A, RG=20Ω, Starting TJ=25℃ THERMAL DATA PARAMETER TO-220/TO-220F Junction to Ambient TO-263 TO-220 Junction to Case TO-220F TO-263 SYMBOL θJA θJC RATINGS 62.5 110 1.25 1.77 2.31 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN VGS = 0 V, ID = 250μA VDS = 60 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V 60 VDS = VGS, ID = 250μA VGS = 10 V, ID = 30A 2.0 VGS = 0V, VDS =25V, f = 1MHz VDD=30V, ID=60A, RL=0.5Ω, VGS=10V (Note 2, 3) VDS = 30V, VGS = 10 V ID = 60A (Note 2, 3) TYP 14 MAX UNIT 1 100 -100 V μA nA nA 4.0 18 V mΩ 2000 400 115 12 11 25 15 39 12 10 pF pF pF 30 30 50 30 60 ns ns ns ns nC nC nC 2 of 8 QW-R502-121.C 60N06 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD VGS = 0 V, IS = 60A Continuous Source Current IS Pulsed Source Current ISM Reverse Recovery Time trr IS=60A, VGS=0V, dIF/dt=100A/μs Reverse Recovery Charge QRR Note: 1. ISD≤60A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25℃ 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 3. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 1.6 60 120 60 3.4 V A ns μC 3 of 8 QW-R502-121.C 60N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-121.C 60N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Switching Waveforms Gate Charge Waveform Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-121.C 60N06 Drain Current, ID (A) TYPICAL CHARACTERISTICS Drain Current, ID (A) Power MOSFET Transconductance On-Resistance vs. Drain Current 0.020 Tc = -55℃ 60 On-Resistance, RDS(ON) (Ω) Transconductance, gfs (S) 70 25℃ 50 125℃ 40 30 20 10 0 0 40 20 10 30 Gate-to-Source Voltage, VGS (V) 0.016 VGS = 10V 0.012 0.008 0.004 0 50 0 20 40 60 80 Drain Current, ID (A) Capacitance Gate Charge 3000 Capacitance, C (pF) Gate-to-Source Voltage, VGS (V) 10 2500 Ciss 2000 1500 1000 Coss 500 0 100 Crss 0 20 10 30 Drain-to-Source Voltage, VDS (V) 40 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VGS = 10V ID = 60A 8 6 4 2 0 0 20 10 30 Total Gate Charge, QG (nC) 40 6 of 8 QW-R502-121.C 60N06 TYPICAL CHARACTERISTICS(Cont.) Drain Current, ID (A) Drain Current, ID (A) Source Current, IS (A) On-Resistance, RDS(ON) (Ω) (Normalized) Power MOSFET Normalized Thermal Transient Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0. 01 -5 10 0.05 0.02 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-121.C 60N06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-121.C