LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 • LG = 0.3 µm, WG = 280 µm • LOW COST PLASTIC PACKAGING • TAPE & REEL PACKAGING OPTION AVAILABLE Noise Figure, NF (dB) 3.5 Ga 3 18 2.5 15 2 12 1.5 9 1 6 NF DESCRIPTION NE76038 is a high performance gallium arsenide metal semiconductor field effect transistor housed in a plastic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1 - 14 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3 micron gate and triple epitaxial technology. 0.5 3 0 0 1 10 Associated Gain, GA (dB) • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 20 Frequency, f (GHz) NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 GA IDSS PARAMETERS AND CONDITIONS NE76038 38 UNITS Optimum Noise Figure at VDS = 3 V, IDS = 10 mA f = 4 GHz f = 12 GHz dB dB Associated Gain at VDS = 3 V, IDS = 10 mA f = 4 GHz f = 12 GHz dB dB Saturated Drain Current at VDS = 3 V, VGS = 0 V MIN TYP 0.8 1.8 12.0 MAX 1.2 13.0 7.5 mA 15 30 50 VP Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA V -3.0 -0.8 -0.5 gm Transconductance at VDS = 3 V, IDS = 10 mA mS 30 40 70 Gate to Source Leakage Current at VGS = -3 V µA IGSO 10 Note: 1. Typical values of noise figures are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen. California Eastern Laboratories NE76038 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 3 V, IDS = 10 mA ΓOPT ANG1 VDS Drain to Source Voltage V 5 FREQ. (GHz) NFOPT (dB) GA (dB) MAG VGD Gate to Drain Voltage V -5 0.5 0.40 21.67 0.84 5 0.79 1.0 0.45 20.01 0.82 10 0.75 2.0 0.60 18.88 0.76 28 0.70 4.0 0.80 15.53 0.66 58 0.61 6.0 1.10 13.24 0.55 101 0.50 8.0 1.35 11.32 0.50 152 0.40 Rn/50 VGS Gate to Source Voltage V -3 IDS Drain Current mA IDSS PIN RF Input (CW) dBm +15 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to +150 10.0 1.60 9.49 0.48 -166 0.31 Total Power Dissipation mW 240 12.0 1.80 8.15 0.54 -130 0.25 Thermal Resistance °C/W 1250 14.0 2.10 7.11 0.63 -105 0.20 16.0 2.30 6.54 0.70 -87 0.15 18.0 2.55 5.68 0.77 -75 0.12 PT RTH2, 3 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. RTH for plastic package mounted on glass epoxy substrate is 965°C/W. 3. RTH for chip mounted on copper heat sink is 190°C/W. Note: 1. ΓOPT is referenced to the bend of the lead, as shown on back page. TYPICAL PERFORMANCE CURVES (TA = 25°C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = 3 V 300 35 250 30 Drain Current, IDS (mA) Total Power Dissipation, PT (mW) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Infinite Heat Sink 200 150 Free Air 100 50 20 15 10 5 0 0 0 25 50 75 100 125 150 175 200 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 40 VGS = 0 V 30 -0.2 V 20 -0.4 V 10 -0.6 V 0 0 1 2 3 4 Drain to Source Voltage, VDS (V) -3 -2.5 -2 -1.5 -1 -0.5 0 Gate to Source Voltage, VGS (V) Ambient Temperature, TA (°C) Drain Current, IDS (mA) 25 5 0.5 NE76038 TYPICAL SCATTERING PARAMETERS1 (TA = 25°C) VDS = 3 V, lDs = 10 mA FREQUENCY (GHz) S11 MAG 0.1 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S21 ANG 0.99 0.99 0.99 0.97 0.95 0.90 0.84 0.77 0.70 0.64 0.61 0.58 0.57 0.58 0.60 0.64 0.67 0.71 0.74 0.77 0.78 S12 S22 MAG K ANG MAG2 MAG ANG MAG ANG (dB) -2 -9 -17 -25 -34 -51 -68 -86 -106 -126 -145 -165 175 156 139 125 114 104 95 86 80 3.29 3.29 3.25 3.25 3.22 3.15 3.07 2.97 2.83 2.66 2.51 2.37 2.21 2.05 1.87 1.72 1.57 1.45 1.32 1.19 1.09 178 171 163 155 147 131 115 99 84 69 55 42 27 15 2 -10 -20 -32 -41 -52 -61 0.006 0.013 0.02 0.03 0.04 0.06 0.08 0.09 0.10 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.14 101 82 78 71 66 57 47 37 28 21 16 10 7 3 -0 -1 -2 -4 -8 -12 -17 0.63 0.63 0.62 0.61 0.60 0.58 0.54 0.50 0.45 0.41 0.37 0.33 0.30 0.27 0.27 0.27 0.30 0.34 0.39 0.44 0.46 -2 -6 -12 -18 -24 -35 -46 -58 -70 -81 -92 -104 -118 -136 -157 -178 164 150 135 122 111 0.174 0.183 0.127 0.249 0.297 0.392 0.500 0.638 0.763 0.866 0.981 1.116 1.228 1.217 1.282 1.301 1.325 1.175 1.158 1.127 1.094 27.390 24.033 22.109 20.348 19.058 17.202 15.840 15.185 14.518 13.835 13.583 11.264 10.152 9.514 8.737 8.274 7.756 7.941 7.653 7.453 7.043 -2 -10 -19 -28 -37 -56 -74 -93 -114 -134 -154 -173 167 149 133 120 110 101 92 84 78 4.36 4.36 4.30 4.27 4.19 4.02 3.83 3.62 3.37 3.13 2.91 2.71 2.51 2.31 2.11 1.94 1.77 1.65 1.50 1.35 1.23 178 171 161 153 144 127 111 95 80 66 52 39 26 14 1 -9 -20 -31 -41 -51 -59 0.004 0.011 0.02 0.03 0.04 0.05 0.07 0.08 0.08 0.09 0.09 0.10 0.10 0.11 0.11 0.12 0.13 0.14 0.14 0.15 0.15 94 82 78 72 67 58 49 41 35 29 26 22 20 16 13 10 8 3 -2 -7 -12 0.57 0.57 0.57 0.56 0.55 0.52 0.48 0.44 0.39 0.35 0.32 0.29 0.26 0.23 0.23 0.24 0.27 0.31 0.36 0.41 0.45 -2 -6 -12 -18 -24 -35 -45 -56 -67 -78 -88 -100 -114 -132 -155 -178 163 149 134 121 110 0.335 0.174 0.198 0.265 0.347 0.526 0.614 0.754 0.954 1.052 1.191 1.213 1.324 1.304 1.362 1.259 1.206 1.083 1.078 1.007 1.006 30.374 25.981 23.324 21.533 20.202 19.053 17.381 16.556 16.245 14.015 12.451 11.546 10.587 9.918 9.237 9.023 8.599 8.955 8.600 9.034 8.680 VDS = 3 V, IDS = 30 mA 0.1 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.99 0.99 0.98 0.96 0.93 0.86 0.79 0.71 0.64 0.58 0.55 0.53 0.53 0.55 0.58 0.63 0.66 0.70 0.73 0.76 0.78 Note: 1. S-Parameters are de-embedded to the bend of the lead as shown on back page. 2. Gain calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE76038 NE76038 NONLINEAR MODEL FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1 Parameters Q1 Parameter VTO -0.73 RG 0 capacitance picofarads VTOSC 0 RD 0 inductance nanohenries ALPHA 4 RS 0 resistance ohms BETA 0.063 RGMET 0 GAMMA 0 KF 0 GAMMADC(2) 0.06 AF 1 Q 2.2 TNOM 27 DELTA 0.7 XTI 3 VBI 0.626 EG 1.43 IS 1.98e-11 VTOTC 0 N 1.4 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 3.2e-12 CDS 0.11e-12 RDB Infinity CBS 0 (3) CGSO 0.4e-12 CGDO(4) 0.04e-12 DELTA1 0.3 DELTA2 0.2 FC 0.5 VBR Infinity (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: (2) GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD Units MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 3 V, ID = 10 mA to 30 mA Date: 8/30/96 NE76038 NE76038 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.01 RD LD LD_PKG 2 0.06 0.53 RD_PKG DRAIN RG_PKG GATE 1.3 LG_PKG 0.64 76000 LG 0.14 0.38 RG R_COMP 365 1.5 CRF_X 500 RS 4.6 CCD_PKG 0.06 CCG_PKG 0.06 CSG_PKG LS_PKG 0.18 RS_PKG 0.1 CSD_PKG 0.003 0.02 SOURCE UNITS Parameter Units capacitance picofarads inductance nanohenries resistance ohms MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 3 V, ID = 10 mA to 30 mA Date: 8/30/96 NE76038 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 38 1.8 ± 0.2 S 1.8 ± 0.2 GATE LEAD MARK D G 1.8 ± 0.2 S 0.5 ± 0.1 4˚ ALL LEADS 0.55 ± 0.1 0.12 ± 0.05 1.1 ± 0.1 3˚ 8˚ 0.5 MIN 4.0 ± 0.2 +0.2 0.1 -0.1 ORDERING INFORMATION PART NUMBER AVAILABILITY NE76038 Bulk up to 1 K 38 1K/Reel 38 NE76038-T1 PACKAGE OUTLINE EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE