ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOT RECOMMENDED FOR NEW DESIGN NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz 24 1.2 µm, WG = 200 µm • LG = 0.20 µ • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION The NE32684A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. 1 21 0.8 18 0.6 15 0.4 12 NF 9 0.2 0 Associated Gain, GA (dB) • HIGH ASSOCIATED GAIN: 11.5 dB Typical at 12 GHz Noise Figure, NF (dB) GA 6 1 10 30 Frequency, f (GHz) NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE32684A PACKAGE OUTLINE SYMBOLS 1 PARAMETERS AND CONDITIONS 84AS UNITS NF Optimum Noise Figure, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB G A1 Associated Gain, VDS = 2 V, IDS = 10 mA, f = 12 GHz dB P1dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA MIN TYP MAX 0.5 0.6 10.0 11.5 dBm dBm 8.5 10.75 11.0 11.5 G1dB Gain at P1dB, f = 12 GHz, VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA dB dB IDSS Saturated Drain Current, VDS = 2 V,VGS = 0 V mA 15 40 70 -0.2 VP Pinch-off Voltage, VDS = 2 V, IDS = 100 µA V -2.0 -0.8 gm Transconductance, VDS = 2 V, ID = 10 mA mS 45 60 µA 0.5 RTH (CH-A) IGSO Gate to Source Leakage Current, VGS = -3 V Thermal Resistance (Channel to Ambient) °C/W 750 RTH (CH-C) Thermal Resistance (Channel to Case) °C/W 10.0 350 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen. California Eastern Laboratories NE32684A ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS TYPICAL NOISE PARAMETERS (TA = 25°C) ΓOPT FREQ. NFOPT GA (GHz) (dB) (dB) MAG ANG Rn/50 VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage V -3.0 1 0.28 22.4 .90 17 0.45 IDS Drain Current mA IDSS 2 0.30 19.4 .85 32 0.37 4 0.33 16.3 .72 64 0.27 6 0.37 14.5 .62 91 0.21 8 0.40 13.3 .54 116 0.15 IGRF Gate Current µA 200 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to +150 10 0.45 12.2 .48 138 0.10 mW 165 12 0.50 11.5 .42 164 0.07 14 0.62 10.7 .38 -169 0.07 16 0.75 10.2 .34 -139 0.08 18 0.91 9.7 .34 -101 0.09 201 1.10 9.2 .38 -77 0.10 PT Total Power Dissipation Note: 1. Operation in excess of any one of these parameters may result in permanent damage. Note: 1. Data at 20 GHz is extrapolated, not measured. TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz 14 1.8 12 1.6 200 GA Noise Figure, NF (dB) Total Power Dissipation, PT (mW) 250 Infinite Heat sink TA = TLEAD 150 100 Free Air 1.4 10 1.2 8 1.0 6 0.8 2 0.6 0 0 0.4 0 25 50 75 100 125 150 175 02 200 10 15 20 25 30 35 TRANSCONDUCTANCE vs. DRAIN CURRENT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS 0.0 V 40 -0.1 30 -0.2 -0.3 20 -0.4 -0.5 100 Transconductance, gm (mS) 50 10 5 Drain Current, IDS (mA) Ambient Temperature, TA (°C) Drain Current, IDS (mA) 4 NF 50 80 60 40 20 -0.6 -0.7 0 0 0 1.5 3.0 Drain to Source Voltage, VDS (V) 0 10 20 30 40 Drain Current, IDS (mA) 50 Associated Gain, GA (dB) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NE32684A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 10 mA) NE32684A VDS = 2 V, IDS = 10 mA FREQUENCY S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 0.999 0.999 0.999 0.991 0.960 0.922 0.873 0.816 0.758 0.712 0.667 0.629 0.592 0.549 0.513 0.487 0.464 0.443 0.423 0.415 0.414 0.413 0.432 -2.0 -3.6 -9.0 -17.6 -33.9 -49.4 -64.5 -79.0 -92.9 -106.0 -117.2 -128.8 -140.1 -152.4 -165.5 -179.2 168.1 154.0 139.4 123.9 107.4 89.2 74.1 4.879 4.872 4.859 4.796 4.750 4.618 4.370 4.179 3.962 3.720 3.527 3.348 3.218 3.104 2.994 2.901 2.825 2.763 2.707 2.638 2.614 2.581 2.528 178.4 176.7 171.5 162.2 146.0 130.4 115.8 101.5 87.9 74.7 63.3 51.3 39.9 28.3 17.1 5.8 -4.5 -16.3 -27.6 -40.1 -52.5 -65.4 -78.0 0.002 0.003 0.008 0.015 0.029 0.042 0.054 0.062 0.070 0.077 0.084 0.090 0.095 0.103 0.110 0.115 0.121 0.130 0.138 0.144 0.152 0.161 0.167 88.8 88.1 85.9 77.7 70.4 60.0 52.4 45.2 38.9 32.5 27.9 22.7 18.5 13.5 8.1 3.4 -1.2 -7.7 -13.9 -22.2 -30.1 -38.6 -49.2 0.555 0.554 0.556 0.552 0.541 0.520 0.505 0.478 0.454 0.437 0.425 0.421 0.418 0.410 0.396 0.382 0.368 0.369 0.373 0.374 0.371 0.360 0.341 -1.9 -2.8 -6.0 -12.0 -23.1 -33.0 -42.8 -52.5 -62.2 -71.8 -79.7 -88.7 -96.8 -105.2 -114.2 -123.2 -132.4 -143.0 -154.5 -166.2 -176.5 171.9 158.7 MAG1 K S21 (dB) (dB) 0.06 0.04 0.01 0.13 0.24 0.36 0.45 0.57 0.68 0.76 0.83 0.88 0.92 0.96 0.99 1.02 1.03 1.01 0.99 0.98 0.95 0.93 0.91 13.8 13.7 13.7 13.6 13.5 13.3 12.8 12.4 12.0 11.4 10.9 10.5 10.1 9.8 9.5 9.2 9.0 8.8 8.6 8.4 8.3 8.2 8.1 33.9 32.1 27.8 25.0 22.1 20.4 19.1 18.3 17.5 16.8 16.2 15.7 15.3 14.8 14.3 13.1 12.5 12.6 12.9 12.6 12.3 12.0 11.8 Note: 1. Gain Calculations: 2 2 2 |S21| |S21| (K ± K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used. , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 MSG = |S12| |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain MAG = NE32684A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) Coordinates in Ohms Frequency in GHz (VDS = 2 V, ID = 20 mA) NE32684A VDS = 2 V, ID = 20 mA FREQUENCY S11 S21 GHz MAG ANG 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 0.999 0.999 0.998 0.986 0.948 0.894 0.833 0.766 0.703 0.653 0.607 0.569 0.529 0.487 0.554 0.428 0.407 0.387 0.368 0.359 0.358 0.361 0.379 -2.3 -4.0 -9.6 -18.9 -36.2 -52.3 -67.8 -82.1 -95.8 -108.6 -119.6 -130.6 -141.4 -153.2 -166.0 -179.3 167.8 154.5 139.9 124.4 107.6 89.4 73.7 MAG 6.403 6.366 6.384 6.298 6.108 5.792 5.404 5.063 4.713 4.385 4.112 3.861 3.686 3.517 3.376 3.262 3.165 3.081 3.007 2.934 2.910 2.865 2.812 S12 S22 ANG MAG ANG 178.0 176.1 170.6 161.0 143.6 127.1 112.1 97.6 84.3 71.3 59.8 48.6 37.5 26.0 14.8 4.1 -5.9 -17.3 -27.9 -40.2 -52.3 -65.4 -77.8 0.002 0.003 0.007 0.014 0.026 0.038 0.049 0.058 0.067 0.074 0.082 0.090 0.097 0.107 0.114 0.121 0.130 0.138 0.146 0.154 0.160 0.169 0.174 88.9 88.6 87.6 77.6 72.2 62.0 55.8 49.4 44.1 38.3 33.8 28.3 23.4 18.4 11.8 6.3 0.6 -5.4 -13.5 -21.6 -30.1 -39.1 -49.0 MAG 0.480 0.480 0.480 0.476 0.467 0.449 0.436 0.413 0.394 0.382 0.374 0.375 0.378 0.374 0.365 0.354 0.341 0.345 0.352 0.353 0.349 0.337 0.319 K ANG -2.0 -2.9 -5.9 -11.5 -22.0 -31.2 -40.4 -49.2 -58.3 -67.4 -74.9 -83.3 -90.8 -99.4 -108.0 -116.8 -125.5 -136.6 -148.4 -160.0 -170.6 177.9 165.2 0.06 0.04 0.03 0.17 0.30 0.46 0.56 0.68 0.77 0.85 0.90 0.93 0.96 0.98 1.00 1.01 1.01 0.99 0.97 0.96 0.94 0.92 0.91 S21 (dB) (dB) 16.1 16.1 16.1 16.0 15.7 15.3 14.6 14.1 13.5 12.8 12.3 11.7 11.3 10.9 10.7 10.3 10.0 9.8 9.6 9.3 9.3 9.1 9.0 35.0 33.3 29.6 26.5 23.7 21.8 20.4 19.4 18.5 17.7 17.0 16.3 15.8 15.2 14.4 13.6 13.3 13.5 13.1 12.8 12.6 12.3 12.1 Note: 1. Gain Calculation: 2 2 2 |S21| |S21| (K ± K 2 - 1 ). When K ≤ 1, MAG is undefined and MSG values are used. , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 MSG = |S12| |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain MAG = MAG1 NE32684A OUTLINE DIMENSIONS (Units in mm) ORDERING INFORMATION PART NUMBER PACKAGE OUTLINE 84AS NE32684AS NE32684A-T1 1.78 ± 0.2 V S PACKAGE OUTLINE Bulk up to 1K 84AS 1K/Reel 84AS Note: Long leaded (1.7 mm min.) 84A package available upon request in bulk quantitites up to 1000 pcs. To order specify NE32684A-SL. S 1.78 ± 0.2 D AVAILABILITY 0.5 ± 0.1 (ALL LEADS) G 1.0 ±0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA CALIFORNIA EASTERN LABORATORIES, INC · DATA SUBJECT TO CHANGE WITHOUT NOTICE Headquarters · 4590 Patrick Henry Drive · Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393/FAX (408) 988-0279