UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. FEATURES * High Power: 850mW * High Current: 1A *Pb-free plating product number: 2N6718L *Pb-free plating product number: 2N6718G ORDERING INFORMATION Normal 2N6718-x-AB3-R 2N6718-x-T6C-K 2N6718-x-T92-B 2N6718-x-T92-K Ordering Number Lead Free Plating 2N6718L-x-AB3-R 2N6718L-x-T6C-K 2N6718L-x-T92-B 2N6718L-x-T92-K Halogen Free 2N6718G-x-AB3-R 2N6718G-x-T6C-K 2N6718G-x-T92-B 2N6718G-x-T92-K www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd Package SOT-89 TO-126C TO-92 TO-92 Pin Assignment 1 2 3 B C E E C B E C B E C B Packing Tape Reel Bulk Tape Box Bulk 1 of 4 QW-R201-056.C 2N6718 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continue) Collector Current (Pulse) RATINGS UNIT 100 V 100 V 5 V 1 A 2 A SOT-89 0.5 W Total Power Dissipation PD TO-126C 1.6 W TO-92 850 mW ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO IC IC ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100uA Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA Emitter-Base Breakdown Voltage BVEBO IE=10μA Collector-Emitter Saturation Voltage VCE(SAT) IC=350mA, IB=35mA Collector Cut-Off Current ICBO VCB=80V hFE1 VCE=1V, IC=50mA DC Current Gain hFE2 VCE=1V, IC=250mA hFE3 VCE=1V, IC=500mA VCE=10V, IC=50mA, Current Gain - Bandwidth Product fT f=100MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz Note: Pulse test: PulseWidth≤380μs, Duty Cycle≤2% MIN 100 100 5 TYP MAX 350 100 80 50 20 UNIT V V V mV nA 300 50 MHz 20 pF CLASSIFICATION OF hFE2 RANK RANGE A 50~115 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 95~300 2 of 4 QW-R201-056.C 2N6718 Current Gain, hFE Saturation Voltage (mV) TYPICAL CHARACTERISTICS Saturation Voltage vs. Collector Current Collector Output Capacitance 100 Capacitance (pF) 10000 1000 VBE(SAT)@Ic=10IB 10 Cob 1 100 1 10 100 1000 10000 0.1 100 10 1 Collector Current, Ic (mA) Collector Base Voltage (V) Safe Operating Area Cutoff Frequency vs. Collector Current 10 1000 Cutoff Frequency (MHz) 1ms Collector Current, Ic(A) Saturation Voltage (mV) NPN SILICON TRANSISTOR 1 100ms 0.1 0.01 1s 1 10 100 Forward Voltage, VCE(V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw fT@VCE=10V 100 1 10 100 Collector Current, Ic(mA) 3 of 4 QW-R201-056.C 2N6718 TYPICAL CHARACTERISTICS Power Derating Power Dissipation, PD(mW) NPN SILICON TRANSISTOR 2000 1500 TO-126C TO-92 SOT-89 1000 500 0 0 50 100 150 200 Ambient Temperature, Ta(℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-056.C