UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications 1 TO-92 FEATURES *High density cell design for low RDS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N7000L-T92-B 2N7000G-T92-B TO-92 2N7000L-T92-K 2N7000G-T92-K TO-92 2N7000L-T92-R 2N7000G-T92-R TO-92 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd. Pin Assignment 1 2 3 S G D S G D S G D Packing Tape Box Bulk Tape Reel 1 of 5 QW-R502-059.C 2N7000 Power MOSFET ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS≤1MΩ) Continuous Gate -Source Voltage Non Repetitive (tp<50μs) Continuous Maximum Drain Current Pulsed Maximum Power Dissipation Derated above 25°C Operating and Storage Temperature SYMBOL VDSS VDGR VGS ID PD TJ,TSTG RATINGS 60 60 ±20 ±40 115 800 400 3.2 -55 ~ +150 UNIT V V V V mA mA mW mW/°C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient RATINGS 312.5 UNIT °C/W ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current IDSS Gate-Body leakage, Forward Gate-Body leakage Reverse ON CHARACTERISTICS (Note) Gate Threshold Voltage IGSSF IGSSR VGS(TH) Static Drain-Source On-Resistance RDS(ON) Drain-Source On-Voltage On-State Drain Current DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS(ON) ID(ON) CISS COSS CRSS TEST CONDITIONS VGS=0V,ID=10 μA VDS=60V, VGS =0V TJ=125°C VDS =VGS, ID=250μA VGS =10V, ID=500mA TJ=100°C VGS =5.0V, ID=50mA TJ=100°C VGS = 10V, ID=500mA VGS = 5.0V, ID=50mA VGS=10V, VDS≧2VDS(ON) VDS=25V,VGS=0V, f=1.0MHz MAX UNIT 1 0.5 100 -100 V μA mA nA nA 60 1 500 2.1 1.2 1.7 1.7 2.4 0.6 0.09 2700 2.5 7.5 13.5 7.5 13.5 3.75 1.5 20 11 4 50 25 5 pF pF pF 20 ns 20 ns 1.5 V 115 mA 0.8 A tON UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP VGS =20V, VDS=0V VGS =-20V, VDS=0V VDD=30V, RL=150Ω, ID=200mA, VGS=10V, RGEN=25Ω VDD=30V, RL=150Ω, ID=200mA, Turn-Off Time tOFF VGS=10V, RGEN=25Ω DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward VSD VGS=0V, Is=115mA(Note ) Voltage Maximum Continuous Drain-Source Is Diode Forward Current Maximum Pulsed Drain-Source ISM Diode Forward Current Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% Turn-On Time MIN 0.88 V Ω V mA 2 of 5 QW-R502-059.C 2N7000 Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-059.C 2N7000 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-059.C 2N7000 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Drain Current, ID (A) 100 us im N)L S(O RD 1ms it 10m s 100 ms 1s 10s DC UTC assum es no responsibility for equipm ent failures that result from using products at values that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-059.C