UNISONIC TECHNOLOGIES CO., LTD UF540 Power MOSFET 27A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF540 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching speed. The UTC UF540 is suitable for AC&DC motor controls and switching power supply, etc FEATURES * RDS(on) < 85mΩ @ VGS = 10 V, ID=15A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF540L-TA3-T UF540G-TA3-T UF540L-TF3-T UF540G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-715.C UF540 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage (Note 2) Gate-Source Voltage RATINGS UNIT 100 V ±20 V TC=25°C 27 A Continuous ID Drain Current TC=100°C 17 A 108 A Pulsed IDM TO-220 125 W Power Dissipation (TC=25°C) PD TO-220F 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. TJ = +25~+150°C SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Case SYMBOL TO-220 TO-220F θJC RATINGS 1.0 2.46 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=100V, VGS=0V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=15A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, VGS=10V, Rise Time tR RGEN=25Ω (Fig.1, 2) Turn-OFF Delay Time tD(OFF) (Note 2) Fall-Time tF Total Gate Charge QG VDD=80V, ID=16A, VGS=10V, Gate to Source Charge QGS Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=27A, VGS=0V Body Diode Reverse Recovery Time trr IS=4.0A, dIS/dt=25A/µs Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Notes: 1. Pulse width limited by TJ. 2. Switching time measurements performed on LEM TR-58 Test equipment. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 V 250 µA +500 nA -500 nA 2.0 4.0 85 V mΩ 1680 250 40 pF pF pF 90 120 300 145 100 12 30 ns ns ns ns nC nC nC 2.0 300 2.5 27 108 V ns A A 2 of 4 QW-R502-715.C UF540 Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-715.C UF540 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) 200 150 100 50 200 150 100 50 0 0 0 0 25 75 100 125 50 Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics 20 0.5 1.5 2 1 2.5 Gate Threshold Voltage, VTH (V) 3 Drain Current vs. Source to Drain Voltage 20 16 16 VGS=10V, ID=15A 12 12 8 8 4 4 VGS=10V, ID=2A 0 0 0.4 0.2 0.1 0.3 Drain to Source Voltage, VDS (V) 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-715.C