2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch(mm) • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.056(1.40) • ESD Protected 2KV HBM 0.047(1.20) • Acqire quality system certificate : TS16949 • AEC-Q101 qualified 0.008(0.20) 0.079(2.00) 0.003(0.08) 0.070(1.80) • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • Case: SOT-23 Package 0.004(0.10) 0.044(1.10) 0.000(0.00) 0.035(0.90) 0.020(0.50) • Terminals : Solderable per MIL-STD-750,Method 2026 0.013(0.35) • Apporx. Weight: 0.0003 ounces, 0.0084 grams • Marking : K72 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Limit Uni ts D ra i n- S o urc e Vo lta g e V DS 60 V G a t e -S o ur c e Vo lt a g e V GS +20 V C o nt i nuo us D ra i n C ur re nt ID 300 mA P uls e d D ra i n C urre nt ID M 2000 mA PD 350 210 mW T J ,T S TG -5 5 to + 1 5 0 RθJA 357 1) M a xi mum P o we r D i s s i p a t i o n O p e ra t i ng J unc t i o n a nd S t o ra g e Te mp e r a tur e Ra ng e Junction-to Ambient Thermal Resistance(PCB mounted)2 TA = 2 5 OC TA = 7 5 OC O O C C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE October 29,2010-REV.02 PAGE . 1 2N7002K-AU ELECTRICALCHARACTERISTICS P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D ra i n-S o urc e B re a k d o wn Vo lta g e B V DSS V G S = 0 V , ID = 1 0 μ A 60 - - V Ga te Thre s ho ld Vo lta g e V G S ( th) V D S = V GS , I D = 2 5 0 μ A 1 - 2 .5 V D ra i n-S o urc e On-S t a t e Re s i s ta nc e R D S ( o n) VGS=4.5V , I D=200mA - - 4 .0 D ra i n-S o urc e On-S t a t e Re s i s ta nc e R D S ( o n) VGS=10V , I D=500mA - - 3.0 Ze ro Ga t e Vo lt a g e D ra i n C ur re nt ID S S VDS=60V , VGS=0V - - 1 μA Gate Body Leakage I GS S V GS= + 2 0 V , V D S= 0 V - - +10 μA Forward Transconductance g fS V D S = 1 5 V , ID = 2 5 0 mA 100 - - mS To ta l Ga te C ha rg e Qg V D S = 1 5 V, ID = 2 0 0 m A VGS=5V - - 0 .8 nC Tur n-On Ti me t on - - 20 Tur n-Off Ti me t off - - 40 Inp ut C a p a c i ta nc e C i ss - - 35 Out p ut C a p a c i t a nc e C oss - - 10 Re ve rs e Tra ns fe r C a p a c i ta nc e C rss - - 5 S t a ti c Ω Dynamic VDD=30V , RL=150Ω ID=200mA , VGEN=10V RG=10Ω V D S= 2 5 V , V GS= 0 V f= 1 .0 M H Z ns pF S o ur c e -D ra i n D i o d e D i o d e F o rwa rd Vo lta g e V SD IS=200mA , VGS=0V - 0.82 1.3 V C o nti nuo us D i o d e F o rwa r d C urr e nt IS - - - 300 mA P uls e D i o d e F o r wa rd C ur re nt IS M - - - 2000 mA VDD Switching Test Circuit VIN VDD Gate Charge Test Circuit RL VGS RL VOUT RG 1mA RG October 29,2010-REV.02 PAGE . 2 2N7002K-AU O Typical Characteristics Curves (TA=25 C,unless otherwise noted) 1.2 V GS= 6.0~10V 5.0V 1 0.8 4.0V 0.6 0.4 0.2 3.0V 0 0 1 2 3 4 5 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 1.2 VDS =10V 1 0.8 0.6 0.4 0.2 25oC 0 0 VDS - Drain-to-Source Voltage (V) 3 4 5 6 FIG.2- Transfer Characteristic 5 RDS(ON) - On-Resistance ( W ) 5 RDS(ON) - On-Resistance ( W ) 2 VGS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 4 3 V GS = 4.5V 2 1 V GS=10V 0 4 3 ID =500mA 2 ID =200mA 1 0 0 0.2 0.4 0.6 0.8 1 FIG.3- On Resistance vs Drain Current 1.8 1.6 2 3 4 5 6 7 8 9 10 V GS - Gate-to-Source Voltage (V) ID - Drain Current (A) RDS(ON) - On-Resistance(Normalized) 1 FIG.4- On Resistance vs Gate to Source Voltage VGS =10V ID =500mA 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature October 29,2010-REV.02 PAGE . 3 2N7002K-AU V GS - Gate-to-Source Voltage (V) 10 Vgs Qg Qsw Vgs(th) 6 4 2 0 Qg(th) Qgs 0 Qg Qgd VDS=10V ID =250mA 8 0.2 1 0.9 0.8 0 25 50 75 100 125 88 BVDSS - Breakdown Voltage (V) Vth - G-S Th r esh o l d Vo l tag e (NORMA L IZED) 1.1 -25 86 84 82 80 78 76 74 72 -50 150 -25 C - Capacitance (pF) IS - Source Current (A) 75 100 -55oC 25oC 0.6 0.8 1 1.4 150 50 40 30 Ciss 20 Coss 10 1.2 125 f = 1MHz V GS = 0V 60 0.1 1.6 VSD - Source-to-Drain Voltage (V) Fig.10 - Source-Drain Diode Forward Voltage October 29,2010-REV.02 50 70 1 0.4 25 Fig.9 - Breakdown Voltage vs Junction Temperature VGS = 0V 0.01 0.2 0 TJ - Junction Temperature ( o C) Fig.8 - Threshold Voltage vs Temperature TJ = 125oC 1 ID = 250 m A TJ - Junction Temperature ( C) 10 0.8 Fig.7 - Gate Charge ID =250 m A 0.7 -50 0.6 Qg - Gate Charge (nC) Fig.6 - Gate Charge Waveform 1.2 0.4 Crss 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.11 - Capacitance vs Drain to Source Voltage PAGE . 4 2N7002K-AU MOUNTING PAD LAYOUT SOT-23 0.035 MIN. (0.90) MIN. Unit：inch(mm) 0.078 (2.00) 0.037 (0.95) 0.043 (1.10) 0.031 MIN. (0.80) MIN. 0.043 (1.10) 0.106 (2.70) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel October 29,2010-REV.02 PAGE . 5 2N7002K-AU Part No_packing code_Version 2N7002K-AU_R1_000A1 2N7002K-AU_R2_000A1 For example : RB500V-40_R2_00001 Serial number Version code means HF Packing size code means 13" Packing type means T/R Part No. Packing Code XX Packing type Tape and Ammunition Box (T/B) Tape and Reel (T/R) Bulk Packing (B/P) Tube Packing (T/P) Tape and Reel (Right Oriented) (TRR) Tape and Reel (Left Oriented) (TRL) FORMING October 29,2010-REV.02 Version Code XXXXX 1st Code Packing size code A N/A 0 HF 0 serial number R 7" 1 RoHS 1 serial number B 13" 2 T 26mm X S 52mm Y L F PANASERT T/B CATHODE UP (PBCU) PANASERT T/B CATHODE DOWN (PBCD) 2nd Code HF or RoHS 1st Code 2nd~5th Code U D PAGE . 6 2N7002K-AU Disclaimer • Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc.. • Panjit International Inc. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latest document. • Panjit International Inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. • Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. • Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. • The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages resulting from such improper use or sale. • Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when complaining. October 29,2010-REV.02 PAGE . 7