NL27WZ08 Dual 2−Input AND Gate The NL27WZ08 is a high performance dual 2−input AND Gate operating from a 1.65 V to 5.5 V supply. Features • • • • • • • • • • Extremely High Speed: tPD 2.5 ns (typical) at VCC = 5 V Designed for 1.65 V to 5.5 V VCC Operation Over Voltage Tolerant Inputs LVTTL Compatible − Interface Capability With 5 V TTL Logic with VCC = 5 V LVCMOS Compatible 24 mA Balanced Output Sink and Source Capability Near Zero Static Supply Current Substantially Reduces System Power Requirements Replacement for NC7WZ08 Chip Complexity: FET = 124 Pb−Free Package is Available http://onsemi.com MARKING DIAGRAM 8 8 1 US8 US SUFFIX CASE 493 L2 M G G 1 L2 M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) A1 1 8 VCC B1 2 7 Y1 *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Y2 GND 6 3 5 4 B2 IEEE/IEC A1 B1 A2 & Y1 A2 B2 Figure 1. Pinout Y2 Figure 2. Logic Symbol PIN ASSIGNMENT FUNCTION TABLE Pin Function 1 A1 2 B1 3 Y2 4 GND 5 A2 6 B2 7 Y1 8 Inputs Output A B Y L L L L H L H L L H H H H = HIGH Logic Level L = LOW Logic Level VCC © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 4 Y = AB 1 Publication Order Number: NL27WZ08/D NL27WZ08 MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage *0.5 to )7.0 V VI DC Input Voltage *0.5 to )7.0 V VO DC Output Voltage *0.5 to VCC + 0.5 V IIK DC Input Diode Current VI < GND *50 mA IOK DC Output Diode Current VO < GND *50 mA IO DC Output Sink Current $50 mA ICC DC Supply Current per Supply Pin $100 mA IGND DC Ground Current per Ground Pin $100 mA TSTG Storage Temperature Range *65 to )150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature under Bias qJA Thermal Resistance PD Power Dissipation in Still Air at 85°C MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 200 N/A V ILatch−Up Latch−Up Performance Above VCC and Below GND at 85°C (Note 5) $500 mA (Note 1) 260 °C )150 °C 250 °C/W 250 mW Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter VCC Supply Voltage VI Input Voltage VO Output Voltage TA Operating Free−Air Temperature Dt/DV Input Transition Rise or Fall Rate Min Max Unit 1.65 1.5 5.5 5.5 V (Note 6) 0 5.5 V (HIGH or LOW State) 0 VCC V *40 )85 °C 0 0 0 20 10 5 ns/V Operating Data Retention Only VCC = 2.5 V $0.2 V VCC = 3.0 V $0.3 V VCC = 5.0 V $0.5 V 6. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level. http://onsemi.com 2 NL27WZ08 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Condition *405C v TA v 855C TA = 255C VCC (V) Min 0.75 VCC 0.7 VCC VIH High−Level Input Voltage 1.65 2.3 to 5.5 VIL Low−Level Input Voltage 1.65 2.3 to 5.5 VOH High−Level Output Voltage VIN = VIL or VIH IOH = 100 mA IOH = −3 mA IOH = −8 mA IOH = −12 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA 1.65 to 5.5 165 2.3 2.7 3.0 3.0 4.5 VOL Low−Level Output Voltage VIN = VIH or VOH IOL = 100 mA IOL = 3 mA IOL = 8 mA IOL = 12 mA IOL = 16 mA IOL = 24 mA IOL = 32 mA 1.65 to 5.5 Typ Max Min 0.75 VCC 0.7 VCC 0.25 VCC 0.3 VCC VCC − 0.1 1.29 1.9 2.2 2.4 2.3 3.8 VCC 1.5 2.1 2.4 2.7 2.5 4.0 0.08 0.20 0.22 0.28 0.38 0.42 2.3 2.7 3.0 3.0 4.5 Max Unit V 0.25 0.3 VCC VCC − 0.1 1.5 1.9 2.2 2.4 2.3 3.8 V V 0.1 0.24 0.3 0.4 0.4 0.55 0.55 0.1 0.24 0.3 0.4 0.4 0.55 0.55 V IIN Input Leakage Current VIN = VCC or GND 0 to 5.5 $0.1 $1.0 mA ICC Quiescent Supply Current VIN = VCC or GND 5.5 1.0 10 mA AC ELECTRICAL CHARACTERISTICS tR = tF = 3.0 ns Symbol tPLH tPHL Condition (V) Min Typ Max Min Max Unit RL = 1 MW, CL = 15 pF 1.8 $ 0.15 2.0 5.7 10.5 2.0 11.0 ns 2.5 $ 0.2 1.0 3.5 5.8 2.0 6.2 RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF 3.3 $ 0.3 0.8 1.2 2.6 3.2 3.9 4.8 0.8 1.2 4.3 5.2 RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF 5.0 $ 0.5 0.5 0.8 1.9 2.5 3.1 3.7 0.5 0.8 3.3 4.0 Parameter Propagation Delay (Figure 3 and 4) *405C v TA v 855C TA = 255C VCC CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance VCC = 5.5 V, VI = 0 V or VCC 4 pF CPD Power Dissipation Capacitance (Note 7) 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 25 30 pF 7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 NL27WZ08 tf = 3 ns tf = 3 ns 90% INPUT A and B 50% VCC VCC 90% 50% 10% 10% tPHL GND RL tPLH CL VOH OUTPUT Y 50% 50% A 1−MHz square input wave is recommended for propagation delay tests. VOL Figure 3. Switching Waveform Figure 4. Test Circuit DEVICE ORDERING INFORMATION Device Order Number NL27WZ08US NL27WZ08USG Package Type Tape and Reel Size† US8 178 mm, 3000 Unit / Tape & Reel US8 (Pb−Free) 178 mm, 3000 Unit / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NL27WZ08 PACKAGE DIMENSIONS US8 US SUFFIX CASE 493−02 ISSUE B −X− A 8 −Y− 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION “A” DOES NOT INCLUDE MOLD FLASH, PROTRUSION OR GATE BURR. MOLD FLASH. PROTRUSION AND GATE BURR SHALL NOT EXCEED 0.140 MM (0.0055”) PER SIDE. 4. DIMENSION “B” DOES NOT INCLUDE INTER−LEAD FLASH OR PROTRUSION. INTER−LEAD FLASH AND PROTRUSION SHALL NOT E3XCEED 0.140 (0.0055”) PER SIDE. 5. LEAD FINISH IS SOLDER PLATING WITH THICKNESS OF 0.0076−0.0203 MM. (300−800 “). 6. ALL TOLERANCE UNLESS OTHERWISE SPECIFIED ±0.0508 (0.0002 “). J DETAIL E B L 1 4 R S G P U C −T− SEATING PLANE D 0.10 (0.004) M H 0.10 (0.004) T K N R 0.10 TYP T X Y V M F DETAIL E DIM A B C D F G H J K L M N P R S U V MILLIMETERS MIN MAX 1.90 2.10 2.20 2.40 0.60 0.90 0.17 0.25 0.20 0.35 0.50 BSC 0.40 REF 0.10 0.18 0.00 0.10 3.00 3.20 0_ 6_ 5_ 10 _ 0.23 0.34 0.23 0.33 0.37 0.47 0.60 0.80 0.12 BSC INCHES MIN MAX 0.075 0.083 0.087 0.094 0.024 0.035 0.007 0.010 0.008 0.014 0.020 BSC 0.016 REF 0.004 0.007 0.000 0.004 0.118 0.126 0_ 6_ 5_ 10 _ 0.010 0.013 0.009 0.013 0.015 0.019 0.024 0.031 0.005 BSC SOLDERING FOOTPRINT* 3.8 0.15 0.50 0.0197 1.8 0.07 0.30 0.012 1.0 0.0394 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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