NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw (SPDT) switch featuring Ultra−Low RON of 0.35 , at VCC = 4.3 V. The part also features guaranteed Break Before Make (BBM) switching, assuring the switches never short the driver. http://onsemi.com MARKING DIAGRAM Features Ultra−Low RON, 0.35 (typ) at VCC = 4.3 V NLAS5223B Interfaces with 2.8 V Chipset NLAS5223BL Interfaces with 1.8 V Chipset Single Supply Operation from 1.65−4.5 V Full 0−VCC Signal Handling Capability High Off−Channel Isolation Low Standby Current, t50 nA Low Distortion RON Flatness of 0.15 High Continuous Current Capability 320 mA Through Each Switch Large Current Clamping Diodes at Analog Inputs 320 mA Continuous Current Capability Package: 1.4 x 1.8 x 0.75 mm WQFN10 Pb−Free 1.4 x 1.8 x 0.55 mm UQFN10 Pb−Free These are Pb−Free Devices 1 1 XX M G XXMG G UQFN10 CASE 488AT XXMG G = Specific Device Code AD = NLAS5223BMNR2G AE = NLAS5223BLMNR2G AP = NLAS5223BMUR2G = Date Code/Assembly Location = Pb−Free Device (Note: Microdot may be in either location) Applications WQFN10 CASE 488AQ Cell Phone Audio Block Speaker and Earphone Switching Ring−Tone Chip/Amplifier Switching Modems NC2 GND 7 6 IN2 8 5 NC1 COM2 9 4 IN1 10 3 COM1 NO2 1 2 VCC NO1 FUNCTION TABLE IN 1, 2 NO 1, 2 NC 1, 2 0 OFF ON 1 ON OFF ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 8 1 Publication Order Number: NLAS5223B/D NLAS5223B, NLAS5223BL COM NO NC IN Figure 1. Logic Equivalent Circuit PIN DESCRIPTION QFN PIN # Symbol Name and Function 2, 5, 7, 10 NC1 to NC2, NO1 to NO2 Independent Channels 4, 8 IN1 and IN2 3, 9 COM1 and COM2 Controls 6 GND Ground (V) 1 VCC Positive Supply Voltage Common Channels MAXIMUM RATINGS Symbol Parameter Value Unit −0.5 to +5.5 V −0.5 v VIS v VCC + 0.5 V VCC Positive DC Supply Voltage VIS Analog Input Voltage (VNO, VNC, or VCOM) VIN Digital Select Input Voltage −0.5 v VIN v +5.5 V Ianl1 Continuous DC Current from COM to NC/NO 320 mA Ianl−pk1 Peak Current from COM to NC/NO, 10% Duty Cycle, 100 ms = tON (Note 1) 600 mA Ianl−pk2 Instantaneous Peak Current from COM to NC/NO, 10% Duty Cycle, tON < 1 s 850 mA Continuous DC Current into COM/NO/NC with Respect to VCC or GND 100 mA Iclmp Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Defined as 10% ON, 90% OFF Duty Cycle. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage 1.65 4.5 V VIN Digital Select Input Voltage (OVT) Overvoltage Tolerance GND 4.5 V VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range −40 +85 C tr, tf Input Rise or Fall Time, SELECT VCC = 1.6 V − 2.7 V VCC = 3.0 V − 4.5 V 20 10 http://onsemi.com 2 ns/V NLAS5223B, NLAS5223BL NLAS5223B DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND) Guaranteed Limit Condition VCC 25C −40C to +85C Unit Symbol Parameter VIH Minimum High−Level Input Voltage, Select Inputs 3.0 4.3 1.4 2.0 1.4 2.0 V VIL Maximum Low−Level Input Voltage, Select Inputs 3.0 4.3 0.7 0.8 0.7 0.8 V IIN Maximum Input Leakage Current, Select Inputs VIN = VCC or GND 4.3 0.1 1.0 A IOFF Power Off Leakage Current VIN = VCC or GND 0 0.5 2.0 A ICC Maximum Quiescent Supply Current (Note 2) Select and VIS = VCC or GND 1.65 to 4.5 1.0 2.0 A 2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. NLAS5223B DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION Guaranteed Maximum Limit 25C Symbol RON Parameter Condition VCC Min −40C to +85C Max Min Max Unit NC/NO On−Resistance (Note 3) VIN = VIL or VIN = VIH VIS = GND to VCC ICOM = 100 mA 3.0 4.3 0.4 0.35 0.5 0.4 RFLAT NC/NO On−Resistance Flatness (Notes 3 and 4) ICOM = 100 mA VIS = 0 to VCC 3.0 4.3 0.16 0.11 0.20 0.14 RON On−Resistance Match Between Channels (Notes 3 and 5) VIS = 1.5 V; ICOM = 100 mA VIS = 2.2 V; ICOM = 100 mA 3.0 0.05 0.05 4.3 0.05 0.05 INC(OFF) INO(OFF) NC or NO Off Leakage Current (Note 3) VIN = VIL or VIH VNO or VNC = 0.3 V VCOM = 4.0 V 4.3 −5.0 5.0 −50 50 nA ICOM(ON) COM ON Leakage Current (Note 3) VIN = VIL or VIH VNO 0.3 V or 4.0 V with VNC floating or VNC 0.3 V or 4.0 V with VNO floating VCOM = 0.3 V or 4.0 V 4.3 −10 10 −100 100 nA 3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. 4. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog signal ranges. 5. RON = RON(MAX) − RON(MIN) between NC1 and NC2 or between NO1 and NO2. http://onsemi.com 3 NLAS5223B, NLAS5223BL NLAS5223BL DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND) Guaranteed Limit Condition VCC 25C −40C to +85C Unit Symbol Parameter VIH Minimum High−Level Input Voltage, Select Inputs 3.0 4.3 1.3 1.6 1.3 1.6 V VIL Maximum Low−Level Input Voltage, Select Inputs 3.0 4.3 0.5 0.6 0.5 0.6 V IIN Maximum Input Leakage Current, Select Inputs VIN = 4.5 V or GND 4.3 0.1 1.0 A IOFF Power Off Leakage Current VIN = 4.5 V or GND 0 0.5 2.0 A ICC Maximum Quiescent Supply Current (Note 6) Select and VIS = VCC or GND 1.65 to 4.5 1.0 2.0 A 6. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. NLAS5223BL DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION Guaranteed Maximum Limit 25C Symbol RON Parameter Condition VCC Min −40C to +85C Max Min Max Unit NC/NO On−Resistance (Note 7) VIN = VIL or VIN = VIH VIS = GND to VCC ICOM = 100 mA 3.0 4.3 0.4 0.35 0.5 0.4 RFLAT NC/NO On−Resistance Flatness (Notes 7 and 8) ICOM = 100 mA VIS = 0 to VCC 3.0 4.3 0.16 0.11 0.20 0.14 RON On−Resistance Match Between Channels (Notes 7 and 9) VIS = 1.5 V; ICOM = 100 mA VIS = 2.2 V; ICOM = 100 mA 3.0 0.05 0.05 4.3 0.05 0.05 INC(OFF) INO(OFF) NC or NO Off Leakage Current (Note 7) VIN = VIL or VIH VNO or VNC = 0.3 V VCOM = 4.0 V 4.3 −10 10 −100 100 nA ICOM(ON) COM ON Leakage Current (Note 7) VIN = VIL or VIH VNO 0.3 V or 4.0 V with VNC floating or VNC 0.3 V or 4.0 V with VNO floating VCOM = 0.3 V or 4.0 V 4.3 −10 10 −100 100 nA 7. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. 8. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog signal ranges. 9. RON = RON(MAX) − RON(MIN) between NC1 and NC2 or between NO1 and NO2. http://onsemi.com 4 NLAS5223B, NLAS5223BL AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Maximum Limit Symbol Parameter Test Conditions VCC (V) VIS (V) 25C Min Typ* −40C to +85C Max Min Max Unit tON Turn−On Time RL = 50 , CL = 35 pF (Figures 3 and 4) 2.3 − 4.5 1.5 50 60 ns tOFF Turn−Off Time RL = 50 , CL = 35 pF (Figures 3 and 4) 2.3 − 4.5 1.5 30 40 ns tBBM Minimum Break−Before−Make Time VIS = 3.0 RL = 50 , CL = 35 pF (Figure 2) 3.0 1.5 2 ns 15 Typical @ 25, VCC = 3.6 V CIN CNO/NC CCOM Control Pin Input Capacitance 3.5 pF NO, NC Port Capacitance 60 pF COM Port Capacitance When Switch is Enabled 200 pF *Typical Characteristics are at 25C. ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol BW Parameter Condition 25C VCC (V) Typical Unit Maximum On−Channel −3 dB Bandwidth or Minimum Frequency Response VIN centered between VCC and GND (Figure 5) 1.65 − 4.5 19 MHz VONL Maximum Feed−through On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 5) 1.65 − 4.5 −0.06 dB VISO Off−Channel Isolation f = 100 kHz; VIS = 1 V RMS; CL = 5.0 pF VIN centered between VCC and GND (Figure 5) 1.65 − 4.5 −68 dB Charge Injection Select Input to Common I/O VIN = VCC to GND, RIS = 0 , CL = 1.0 nF Q = CL x DVOUT (Figure 6) 1.65 − 4.5 38 pC THD Total Harmonic Distortion THD + Noise FIS = 20 Hz to 20 kHz, RL = Rgen = 600 , CL = 50 pF VIS = 2.0 V RMS 3.0 0.08 % VCT Channel−to−Channel Crosstalk f = 100 kHz; VIS = 1.0 V RMS, CL = 5.0 pF, RL = 50 VIN centered between VCC and GND (Figure 5) 1.65 − 4.5 −70 dB Q 10. Off−Channel Isolation = 20log10 (VCOM/VNO), VCOM = output, VNO = input to off switch. http://onsemi.com 5 NLAS5223B, NLAS5223BL VCC DUT VIS Input Output GND VOUT 0.1 F 50 tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 2. tBBM (Time Break−Before−Make) VCC Input DUT VIS 0.1 F 50% Output VOUT Open 50% 0V 50 VOH 90% 35 pF 90% Output VOL Input tON tOFF Figure 3. tON/tOFF VCC VCC Input DUT Output 50% 0V 50 VOUT Open 50% VOH 35 pF Output Input tOFF Figure 4. tON/tOFF http://onsemi.com 6 10% 10% VOL tON NLAS5223B, NLAS5223BL 50 DUT Reference Transmitted Input Output 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Logǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 5. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off VIN Figure 6. Charge Injection: (Q) http://onsemi.com 7 On Off VOUT NLAS5223B, NLAS5223BL 0 0 −10 −3 −20 −30 −6 BW (dB) XT (dB) −40 −50 −60 −9 −12 −70 −80 −15 −90 −100 0.01 0.1 1 10 −18 0.01 100 0.1 FREQUENCY (MHz) 100 FREQUENCY (MHz) Figure 7. Cross Talk vs. Frequency @ VCC = 4.3 V Figure 8. Bandwidth vs. Frequency 0.4 0.12 85C 0.35 0.1 0.3 RON () 0.08 THD (%) 10 1 0.06 0.04 25C 0.25 −40C 0.2 0.15 0.1 0.02 0.05 0 10 100 1000 10000 0 100000 0 0.5 1 FREQUENCY (Hz) 3 2.5 Figure 10. On−Resistance vs. Input Voltage @ VCC = 3.0 V 0.36 0.34 0.4 0.35 3.0 V 0.32 0.3 0.30 85C 0.28 RON () 0.25 RON () 2 VIN (V) Figure 9. Total Harmonic Distortion 25C 0.2 −40C 0.15 0.26 0.24 0.22 4.3 V 0.20 0.1 0.18 0.05 0 1.5 0.16 0 0.5 1 1.5 2 2.5 3 3.5 0.14 4 0 0.5 1 1.5 2 2.5 3 3.5 4 VIN (V) VIN (V) Figure 11. On−Resistance vs. Input Voltage @ VCC = 4.3 V Figure 12. On−Resistance vs. Input Voltage http://onsemi.com 8 4.5 NLAS5223B, NLAS5223BL ORDERING INFORMATION Package Shipping† NLAS5223BMNR2G WQFN10 (Pb−Free) 3000 / Tape & Reel NLAS5223BLMNR2G WQFN10 (Pb−Free) 3000 / Tape & Reel NLAS5223BMUR2G UQFN10 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 9 NLAS5223B, NLAS5223BL PACKAGE DIMENSIONS WQFN10, 1.4x1.8, 0.4P CASE 488AQ−01 ISSUE C D ÉÉ ÉÉ ÉÉ PIN 1 REFERENCE 2X 2X 0.15 C M1 E DETAIL A Bottom View (Optional) 0.15 C B EXPOSED Cu A 0.10 C 0.08 C A1 A1 A3 3 9X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. EXPOSED PADS CONNECTED TO DIE FLAG. USED AS TEST CONTACTS. EDGE OF PACKAGE A 5 L C SEATING PLANE DIM A A1 A3 b D E e L L1 M1 MOLD CMPD ÉÉÉ ÉÉÉ A3 DETAIL B Side View (Optional) e/2 MOUNTING FOOTPRINT e 1.700 0.0669 6 1 0.663 0.0261 10 L1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.050 0.20 REF 0.15 0.25 1.40 BSC 1.80 BSC 0.40 BSC 0.30 0.50 0.40 0.60 0.00 0.05 10 X b 0.200 0.0079 0.10 C A B 0.05 C NOTE 3 9X 0.563 0.0221 1 2.100 0.0827 0.400 0.0157 PITCH http://onsemi.com 10 10 X 0.225 0.0089 SCALE 20:1 mm Ǔ ǒinches NLAS5223B, NLAS5223BL PACKAGE DIMENSIONS UQFN10, 1.4x1.8, 0.4P CASE 488AT−01 ISSUE A EDGE OF PACKAGE D ÉÉ ÉÉ PIN 1 REFERENCE 2X 2X L1 E DETAIL A Bottom View (Optional) 0.10 C 0.10 C B TOP VIEW A1 0.05 C A1 3 SEATING PLANE C SIDE VIEW 9X EXPOSED Cu A 0.05 C 10X 5 DIM A A1 A3 b D E e L L1 L3 MOLD CMPD ÉÉ ÉÉ A3 DETAIL B Side View (Optional) 1.700 0.0669 0.663 0.0261 6 e 1 10 X L3 b MILLIMETERS MIN MAX 0.45 0.60 0.00 0.05 0.127 REF 0.15 0.25 1.40 BSC 1.80 BSC 0.40 BSC 0.30 0.50 0.00 0.15 0.40 0.60 MOUNTING FOOTPRINT e/2 L 10 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A 0.200 0.0079 1 0.10 C A B 0.05 C 9X 0.563 0.0221 2.100 0.0827 NOTE 3 BOTTOM VIEW 0.400 0.0157 PITCH 10 X 0.225 0.0089 SCALE 20:1 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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