NLAS4685 Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw (SPDT) switch featuring Ultra−Low RON of 0.8 , for the Normally Closed (NC) switch and for the Normally Opened switch (NO) at 2.7 V. The part also features guaranteed Break Before Make switching, assuring the switches never short the driver. The NLAS4685 is available in a 2.0 x 1.5 mm bumped die array, with a 3 x 4 arrangement of solder bumps. The pitch of the solder bumps is 0.5 mm for easy handling. Features XXD A1 A1 XX = Device Code D = Date Code VCC = 2.7−3.3 V Single Supply Operation from 1.8−5.5 V Tiny 2 x 1.5 mm Bumped Die Low Crosstalk, t 81 dB at 100 kHz Full 0−VCC Signal Handling Capability High Isolation, −65 dB at 100 kHz Low Standby Current, t50 nA Low Distortion, t0.14% THD RON Flatness of 0.15 Pin for Pin Replacement for MAX4685 Pb−Free Package is Available PIN CONNECTIONS AND LOGIC DIAGRAM (Top View) GND B1 Applications • • • • • MARKING DIAGRAM Microbump−10 CASE 489AA • Ultra−Low RON, t0.8 at 2.7 V • Threshold Adjusted to Function with 1.8 V Control at • • • • • • • • • • http://onsemi.com NC1 C1 A1 NC2 IN1 C2 A2 IN2 COM1 C3 A3 COM2 NO1 C4 A4 NO2 B4 Cell Phone Speaker Switching Power Switching (Up to 100 mA) Modems Automotive VCC FUNCTION TABLE IN 1, 2 NO 1, 2 NC 1, 2 0 1 OFF ON ON OFF ORDERING INFORMATION Package Shipping † NLAS4685FCT1 Microbump 3000 Tape/Reel NLAS4685FCT1G Microbump (Pb−Free) 3000 Tape/Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 2 1 Publication Order Number: NLAS4685/D NLAS4685 MAXIMUM RATINGS Symbol Parameter VCC Positive DC Supply Voltage VIS Analog Input Voltage (VNO, VNC, or VCOM) (Note 1) VIN Digital Select Input Voltage IIK DC Current, Into or Out of Any Pin Value Unit *0.5 to )7.0 V *0.5 v VIS v VCC )0.5 V *0.5 v VI v)7.0 V $50 mA Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Signal voltage on NC, NO, and COM exceeding VCC or GND are clamped by the internal diodes. Limit forward diode current to maximum current rating. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 1.8 5.5 V 5.5 V VCC DC Supply Voltage VIN Digital Select Input Voltage GND VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range *55 )125 °C tr, tf Input Rise or Fall Time, SELECT 0 0 100 20 ns/V VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Condition VCC $10% *555C to 255C t855C t1255C Unit VIH Minimum High−Level Input Voltage, Select Inputs 2.0 2.5 3.0 5.0 1.4 1.4 1.4 2.0 1.4 1.4 1.4 2.0 1.4 1.4 1.4 2.0 V VIL Maximum Low−Level Input Voltage, Select Inputs 2.0 2.5 3.0 5.0 0.5 0.5 0.5 0.8 0.5 0.5 0.5 0.8 0.5 0.5 0.5 0.8 V IIN Maximum Input Leakage Current, Select Inputs VIN = 5.5 V or GND 5.5 $ 1.0 $ 1.0 $ 1.0 A IOFF Power Off Leakage Current VIN = 5.5 V or GND 0 $10 $10 $10 A ICC Maximum Quiescent Supply Current Select and VIS = VCC or GND 5.5 $ 180 $ 200 $ 200 nA http://onsemi.com 2 NLAS4685 DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Maximum Limit −555C to 255C Symbol VCC $10% Min Max t855C Max Unit 2.0 0.8 0.8 2.0 1.0 0.9 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 2.5 0.18 0.18 0.18 3.0 0.06 0.06 0.06 5.0 0.06 0.06 0.06 Parameter Condition RON (NC, NO) “ON” Resistance (Note 2) VIN w VIH VIS = GND to VCC IINI v 100 mA 2.5 3.0 5.0 2.0 0.8 0.8 RFLAT (NC, NO) On−Resistance Flatness (Notes 2, 4) ICOM = 100 mA VIS = 0 to VCC 2.5 3.0 5.0 RON On−Resistance Match Between Channels (Notes 2 and 3) VIS = 1.3 V; ICOM = 100 mA VIS = 1.5 V; ICOM = 100 mA VIS = 2.8 V; ICOM = 100 mA Min Max t1255C Min INC(OFF) INO(OFF) NC or NO Off Leakage Current (Figure 10) VIN = VIL or VIH VNO or VNC = 1.0 VCOM = 4.5 V 5.5 −1 1 −10 10 −150 150 nA ICOM(ON) COM ON Leakage Current (Figure 10) VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNC 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V 5.5 −1 1 −10 10 −150 150 nA 2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. 3. RON = RON(MAX) − RON(MIN) between all switches. 4. Flatness is defined as the difference between the maximum and minimum value of on−resistance as measured over the specified analog signal ranges. http://onsemi.com 3 NLAS4685 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Maximum Limit Symbol Parameter Test Conditions VCC (V) VIS (V) *555C to 255C Min Typ* t855C Max Min Max t1255C Min Max Unit tON Turn−On Time RL = 50 CL = 35 pF (Figures 2 and 3) 2.5 3.0 5.0 1.3 1.5 2.8 55 50 30 65 60 35 70 60 35 ns tOFF Turn−Off Time RL = 50 CL = 35 pF (Figures 2 and 3) 2.5 3.0 5.0 1.3 1.5 2.8 55 50 25 65 60 30 70 60 30 ns tBBM Minimum Break−Before−Make Time VIS = 3.0 RL = 300 CL = 35 pF (Figure 1) 3.0 1.5 ns 2 15 Typical @ 25, VCC = 5.0 V CNC Off CNO Off CNC On CNO On VCC = 3.0 V NC Off Capacitance, f = 1 MHz NO Off Capacitance, f = 1 MHz NC On Capacitance, f = 1 MHz NO On Capacitance, f = 1 MHz 208 102 547 431 pF *Typical Characteristics are at 25°C. ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) (Note 6) Symbol Parameter VCC V Condition Typical 255C Unit 3.0 11.5 MHz BW Maximum On−Channel −3dB Bandwidth or Minimum Frequency Response VIN = 0 dBm VIN centered between VCC and GND (Figure 4) VONL Maximum Feed−through On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 4) 3.0 −0.05 dB f = 100 kHz; VIS = 1 V RMS; CL = 5 nF VIN centered between VCC and GND(Figure 4) 3.0 −65 dB VISO Off−Channel Isolation NC/NO Q Charge Injection Select Input to Common I/O VIN = VCC to GND, RIS = 0 , CL = 1 nF Q = CL − VOUT (Figure 5) 3.0 5.0 15 20 pC THD Total Harmonic Distortion THD + Noise FIS = 20 Hz to 20 kHz, RL = Rgen = 600 , CL = 50 pF VIS = 1 V RMS 3.0 0.14 % VCT Channel−to−Channel Crosstalk f = 100 kHz; VIS = 1 V RMS, CL = 5 pF, RL = 50 VIN centered between VCC and GND (Figure 4) 3.0 −81 dB 5. Off−Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch. 6. −40°C specifications are guaranteed by design. http://onsemi.com 4 NLAS4685 VCC DUT VCC Input Output GND VOUT 0.1 F 50 tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 1. tBBM (Time Break−Before−Make) VCC Input DUT VCC 0.1 F 50% Output VOUT Open 50% 0V 50 VOH 90% 35 pF 90% Output VOL Input tON tOFF Figure 2. tON/tOFF VCC VCC Input DUT Output 50 50% VOUT Open 50% 0V VOH 35 pF Output 10% VOL Input tOFF Figure 3. tON/tOFF http://onsemi.com 5 10% tON NLAS4685 50 DUT Reference Transmitted Input Output 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log ǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 4. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off VIN Figure 5. Charge Injection: (Q) http://onsemi.com 6 On Off VOUT NLAS4685 10 1.6 Vin THRESHOLD (V) 1.4 THD (%) 1 1,NC1 0.1 1, NO1 Threshold Rising 1.2 1 Threshold Falling 0.8 0.6 0.4 0.2 0.01 0 1 10 100 1000 10000 0 100000 4 6 FREQUENCY (Hz) VCC (V) Figure 6. Total Harmonic Distortion Plus Noise versus Frequency Figure 7. Voltage in Threshold on Logic Pins 70 200 1, NO1 60 T−on 2.5V −200 T−on / T−off (ns) 0 1,NC1 −400 T−off 2.5 V 50 T−on 3.0 V 40 T−off 3.0 VT−off 5 V 30 20 T−on 5 V −600 −800 10 Q (pC), VCC = 5 V 0 2 4 0 −55 6 −30 −5 20 45 70 95 120 Vin (V) TEMPERATURE (°C) Figure 8. Charge Injection versus Vis Figure 9. T−on/T−off Time versus Temperature 1000 NO/NC CURRENT LEAKAGE (nA) Charge Injection “Q’’ (pC) 2 2.75 V 100 10 Comm / Closed Switch 1 0.1 Open Switch 0.01 0.001 −55 −5 45 95 TEMPERATURE (°C) Figure 10. NO/NC Current Leakage Off and On, VCC = 5 V http://onsemi.com 7 NLAS4685 1.3 100 1.1 TA = +25°C ICOM = 100 mA +85°C 5.5 V +25°C 0.9 10 RON () ICC CuRRENT (nA) 1000 1 0.7 0.1 0.5 0.01 0.3 0.001 −40°C 0.1 −55 −5 45 95 0.0 1.0 2.0 TEMPERATURE (°C) 3.0 4.0 5.0 VCOM (V) Figure 11. ICC Current Leakage versus Temperature VCC = 5.5 V Figure 12. NC/NO On−Resistance versus COM Voltage 4.5 1.8 V TA = +25°C ICOM = 100 mA 4 3.5 2.0 V RON () 3 2.5 2.7 V 2.3 V 2 2.5 V 1.5 3.0 V 5.0 V 1 0.5 0 0.0 1.0 2.0 3.0 4.0 5.0 VCOM (V) Figure 13. NC/NO On−Resistance versus COM Voltage 0 BANDWIDTH (dB/Div) −1 10 0 Phase Shift (Degrees) 0 PHASE (Degrees) Bandwidth (On − Loss) −1 Off−Isolation −10 Crosstalk VCC = 3.0 V TA = 25°C −10 0.001 0.01 VCC = 3.0 V TA = 25°C 0.1 1.0 10 −10 0.001 100 FREQUENCY (MHz) 0.01 0.1 1.0 10 100 FREQUENCY (MHz) Figure 14. NC/NO Bandwidth and Phase Shift versus Frequency Figure 15. NC/NO Off Isolation and Crosstalk http://onsemi.com 8 NLAS4685 0.9 100 +85°C 0.8 +25°C AVERAGE RON () 60 T−on 40 T−off 0.7 0.6 0.4 0.3 0.2 0 1.8 −40°C 0.5 20 VCC = 5 V ICOM = 100 mA 0.1 2.8 3.8 0.0 4.8 1.0 VCC (V) 2.0 0.9 +85°C +25°C 0.7 −40°C 0.6 0.5 0.4 0.3 0.1 4.0 Figure 17. NC/NO On−Resistance versus COM Voltage 0.8 0.2 3.0 VCOM (V) Figure 16. T−on/T−off versus VCC AVERAGE RON () T−on / T−off (ns) 80 VCC = 3 V ICOM = 100 mA 0.0 1.0 2.0 VCOM (V) Figure 18. NC/NO On−Resistance versus COM Voltage http://onsemi.com 9 3.0 5.0 NLAS4685 PACKAGE DIMENSIONS Microbump−10 CASE 489AA−01 ISSUE O D 4X A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. B 0.10 C E DIM A A1 A2 D E b e D1 E1 PIN ONE CORNER A1 0.10 C A2 A 0.075 C C MILLIMETERS MIN MAX −−− 0.650 0.210 0.270 0.280 0.380 1.965 BSC 1.465 BSC 0.250 0.350 0.500 BSC 1.500 BSC 1.000 BSC SEATING PLANE D1 e 10 X b 0.15 C A B 0.05 C C E1 B A 1 2 3 4 e ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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