DOMINANT Semiconductors Innovating Illumination SPNovaLED TM DATA SHEET: SPNovaLEDTM InGaN White : 350 mA TM Featuring a staggering brilliance and significant flux output, the SPNovaLED™ showcases the latest technological advent in this range. With its extremely high level of brightness and the ultra low high profile, which is only 1.5 mm are highly suitable for both conventional lighting and specialized application such as automotive signal lights, traffic lights, channel lights, tube lights and garden lights among others. Features: > Super high brightness surface mount LED. > High flux output, 35 lumens (typical). > 120° viewing angle. > Compact package outline (LxWxH) of 6.0 x 6.0 x 1.5mm. > Ultra low height profile - 1.5 mm. > Designed for high current drive; typically 350 mA. > Low thermal resistance; Rth (js) = 20 K/W. > Qualified according to JEDEC moisture sensitivity Level 2. > Compatible to IR reflow soldering. > Environmental friendly; RoHS compliance. > SPNovaLED are Class 1M LED products. Do not view directly with optical instrument. Applications: > Automotive: exterior applications, eg: Center High Mounted Stop Light (CHMSL), Rear Combination Lights (RCLs), Signal lightting, Fog-lamp, etc. > Communication: indicator and backlight in mobilephone. > Industry: white goods (eg: Oven, microwave, etc.). > Lighting: garden light, architecture lighting, general lighting. etc © 2005 SPNovaLED is a trademark of DOMINANT Semiconductors. All rights reserved. Product specifications are subject to change without notice. 1 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination Part Ordering Number NPW-USD-AAC-1 Chip Technology / Color Viewing Angle˚ InGaN Luminous Intensity @ IF = 350mA (mcd) 120 7150.0 - 14000.0 • NPW-USD-AA 7150.0 - 9000.0 • NPW-USD-AB 9000.0 - 11250.0 • NPW-USD-AC 11250.0 - 14000.0 NPW-USD-AD-1 14000.0 - 18000.0 • NPW-USD-AD 14000.0 - 18000.0 NOTE 1. Luminous intensity is measured with an accuracy of ± 11%. 2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. Electrical Characteristics at Ta=25˚C Part Number NPW-USD Vf @ If = 350mA Vr @ Ir = 10uA Typ. (V) Min. (V) Min. (V) 3.0 Max. (V) 3.6 5 4.0 Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V. Material Material Lead-frame Cu Alloy With Ag Plating Package High Temperature Resistant Plastic, PPA Encapsulate Silicone Resin Soldering Leads Sn Plating 2 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination Absolute Maximum Ratings Maximum Value Unit DC forward current 350 mA Peak pulse current 1000 mA 5 V ESD Threshold (HBM) 2000 V LED junction temperature 120 ˚C Operating temperature -40 … +100 ˚C Storage temperature -40 … +100 ˚C Reverse Voltage Correlated Color Temperature (CCT) Color Bin Minimum CCT (K) Maximum CCT (K) Y3 4500 5000 Y2 5000 5500 Y1 5500 6000 X3 6000 7000 X2 7000 8000 X1 8000 9000 Note: CCT values provided for each of the color bins are an approximation based on correlation. Correlation Between Luminous Intensity And Luminous Flux IV Bin Luminous Intensity (mcd) Luminous Flux (lm) Min Max Min Max AA 7150 9000 20.0 25.0 AB 9000 11250 25.0 31.5 AC 11250 14000 31.5 39.0 AD 14000 18000 39.0 50.0 Note: Data provided above is based on approximation. 3 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination Color Bin White Bin Structure 0.44 • 0.42 0.40 0.38 0.36 0.34 0.32 0.30 • 0.28 0.26 X1 • 0.24 0.22 0.26 • 0.27 0.28 • X2 X3 • • 0.29 • 0.30 0.31 • Y1 • 0.32 • 0.33 • Y2 Y3 • • 0.34 0.35 0.36 Chromaticity coordinate groups are measured with an accuracy of ± 0.01. Bin X1 X2 X3 Y1 Y2 Y3 Cx 1 2 3 4 0.278 0.290 0.290 0.278 0.288 Cy 0.243 0.265 0.310 Cx 0.290 0.303 0.303 0.290 0.310 Cy 0.265 0.286 0.331 Cx 0.303 0.315 0.315 0.303 0.331 Cy 0.286 0.308 0.353 Cx 0.315 0.328 0.328 0.315 0.353 Cy 0.308 0.330 0.375 Cx 0.328 0.340 0.340 0.323 0.375 Cy 0.330 0.351 0.396 Cx 0.340 0.353 0.353 0.340 0.373 0.418 0.396 Cy 0.351 4 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination Relative Flux Vs Forward Current 1.4 Relative Flux; Normalized Relative Flux at 350mA Relative Intensity; Normalized Relative Intensity at 350mA Relative Intensity Vs Forward Current 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 1 0.8 0.6 0.4 0.2 0 0 200 400 600 Forward Current, mA Forward Current, mA Forward Current Vs Forward Voltage Relative Spectral Emission 1 0.9 500 0.8 Relative Intensity Forward Current, mA 1.2 600 600 400 300 200 0.7 0.6 0.5 0.4 0.3 0.2 100 0.1 0 0 2 2.5 3 3.5 4 4.5 400 500 600 700 Forward Voltage, V Wavelength, nm Forward Current Vs Ambient Temperature Forward Current Vs Solder Point Temperature 400 400 350 350 Forward Current, mA Forward Current, mA 1.4 300 250 200 150 100 300 250 200 150 100 50 50 0 0 0 20 40 60 80 100 0 20 40 60 80 100 Solder Point Temperature Ambient Temperature 5 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination Radiation Pattern 30 o 20 o 10 o 0o 1.0 40 o 50 o 60 o 70 o 80 o 90 o 0.8 0.6 0.4 0.2 0 6 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination SPNovaLED • InGaN White : 350 mA Package Outlines TM 7 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination Solder Pad Design Note: Unit to unit pitching must not be less than 25 mm. Metal core circuit board (MCPCB) is highly recommended for high density applications. Please consult sales and marketing for additional information. Recommended Solder Pad Design For Better Heat Dissipation 8 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination Taping and orientation • Reels come in quantity of 2000 units. • Reel diameter is 330 mm. 9 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination Packaging Specification 10 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination Packaging Specification Moisture sensitivity level Barcode label DOMINANT Semiconductors ROHS Compliant LOT NO : lotno PB Free PART NO : partno QTY : qty S/N : xxx D/C: xxxx GROUP : group Reel Moisture absorbent material + Moisture indicator The reel, moisture absorbent material and moisture indicator are sealed inside the moisture proof foil bag Average 1pc SPNovaLED 1 completed bag (2000pcs) 0.188 0.034 800 ± 10 190 10 Weight Weight(gram) (gram) Cardboard Box DOMINANT TM Semiconductors For SPNovaLED Cardboard Box Size Large TM Dimensions (mm) 416 x 516 x 476 Empty Box Weight (kg) Reel / Box 1.74 20 reels MAX 11 Quantity / Box (pcs) 40,000 MAX 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination Recommended Sn-Pb IR-Reflow Soldering Profile Classification Reflow Profile (JEDEC J-STD-020C) 275 235-240˚C 10-30s 250 225 Ramp-up 3˚C/sec max. Temperature (˚C) 200 175 183˚C 150 60-150s 125 Rampdown 6˚C/sec max. 100 75 Preheat 60-120s 50 360s max 25 0 50 100 150 200 Recommended Pb-free Soldering Profile Classification Reflow Profile (JEDEC J-STD-020C) 300 255-260˚C 10-30s 275 250 Temperature (˚C) Ramp-up 3˚C/sec max. 217˚C 225 200 60-150s 175 150 125 Rampdown 6˚C/sec max. 100 75 Preheat 60-180s 50 25 480s max 0 50 100 150 200 Time (sec) 12 19/01/2007 V3.0 DOMINANT TM InGaN White : 350 mA Semiconductors Innovating Illumination Revision History Page Subjects Date of Modification - New Format 02 Dec 2005 2 Add New PartNo: NPW-USD-AD-1 26 Oct 2006 2 Add Min Value (3.0 V) for Vf 19 Jan 2007 NOTE All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT Semiconductors does not assume any liability arising out of the application or use of any product described herein. DOMINANT Semiconductors reserves the right to make changes at any time without prior notice to any products in order to improve reliability, function or design. DOMINANT Semiconductors products are not authorized for use as critical components in life support devices or systems without the express written approval from the Managing Director of DOMINANT Semiconductors. 13 19/01/2007 V3.0 DOMINANT TM Semiconductors Innovating Illumination InGaN White : 350 mA About Us DOMINANT Semiconductors is a dynamic Malaysian Corporation that is among the world’s leading SMT LED Manufacturers. An excellence – driven organization, it offers a comprehensive product range for diverse industries and applications. Featuring an internationally certified quality assurance acclaim, DOMINANT’s extra bright LEDs are perfectly suited for various lighting applications in the automotive, consumer and communications as well as industrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More information about DOMINANT Semiconductors can be found on the Internet at http://www.dominant-semi.com. Please contact us for more information: Head Quarter DOMINANT Semiconductors Sdn. Bhd. Lot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia Tel: (606) 283 3566 Fax: (606) 283 0566 E-mail: [email protected] DOMINANT China Sales Office DOMINANT Semiconductors (Shenzhen) Co. Ltd. 24BC Newbaohui Building, No. 1007 West Nanhai Blvd., Nanshan, Shenzhen, China P.C. 518054 Tel: +86 (755) 86031785 / +86 (755) 86031786 Fax: +86 (755) 86031789 E-mail: [email protected] DOMINANT Korea Sales Office DOMINANT Semiconductors Korea Inc. 902 Sunil Technopia, 440 Sangdaewon-dong, Jungwon-gu, Sungnam-si, Kyunggi-do, Korea 462726 Tel: 82-31-777-3978 Fax: 82-31-777-3976 E-mail: [email protected] DOMINANT Semiconductors Innovating Illumination TM