UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 3 2 DESCRIPTION 1 SOT-23 The UTC 2SA733 is a low frequency amplifier. 3 FEATURES 2 * Collector-Emitter voltage: BVCBO=-50V * Collector current up to -150mA * High hFE linearity * Complimentary to 2SC945 1 SOT-323 *Pb-free plating product number:2SA733L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SA733-x-AE3-R 2SA733L-x-AE3-R 2SA733-x-AL3-R 2SA733L-x-AL3-R Package SOT-23 SOT-323 Pin Assignment 1 2 3 E C B E C B Packing Tape Reel Tape Reel 2SA733L-x-AE3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23, AL3: SOT-323 (3)Rank (3) x: refer to Classification of hFE (4)Lead Plating (4) L: Lead Free Plating, Blank: Pb/Sn MARKING A7 www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-068,B 2SA733 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25℃) SYMBOL RATINGS UNIT VCBO -60 V VCEO -50 V VEBO -5 V 250 mW PC Collector Current IC -150 mA ℃ Junction Temperature TJ 125 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL BVCBO BVCEO VCE(SAT) ICBO IEBO hFE fT Cob NF TEST CONDITIONS IC=-100µA, IE=0 IC=-10mA, IB=0 IC=-100mA, IB=-10mA VCB=-40V, IE=0 VEB=-3V, IC=0 VCE=-6V, IC=-1mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz IC=-0.1mA, VCE=-6V RG=10kΩ, f=100Hz MIN -60 -50 90 100 TYP MAX UNIT V V -0.1 -0.3 V -100 nA -100 nA 600 190 MHz 2.0 3.0 pF 4.0 6.0 dB CLASSIFICATION OF hFE RANK RANGE R 90-180 Q 135-270 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 200-400 K 300-600 2 of 4 QW-R206-068,B 2SA733 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Fig.2 DC Current Gain Fig.1 Static Characteristics 103 VCE=-6V -80 DC Current Gain, hFE Collector Current, IC (mA) -100 I B=-300µA -60 IB =-250µA I B=-200µA -40 IB =-150µA -20 102 101 IB =-100µA IB =-50µA 0 0 100 -10-1 -4 -8 -12 -16 -20 Collector-Emitter Voltage ( V) -100 -101 -102 Collector Current, IC (mA) Fig.3 Base-Emitter on Voltage -103 Fig.4 Saturation Voltage -102 -10 4 Saturation Voltage (MV) Collector Current, I C (mA) IC=10*IB VCE=-6V 1 -10 -100 -10 -1 -10 VCE(SAT) -102 1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -10 -10-1 Base-Emitter Voltage (V) -102 -103 Fig.6 Collector Output Capacitance Capacitance, Cob (pF) 10 VCE=-6V 1 10 100 -1 -10 -101 102 3 102 -100 Collector Current, IC (mA) Fig.5 Current Gain-Bandwidth Product Current Gain-Bandwidth Product, fT(MHz) VBE(SAT) 3 -100 -101 Collector Current, I C (mA) -102 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 101 100 10-1 -100 -101 -102 -103 Collector-Base Voltage (V) 3 of 4 QW-R206-068,B 2SA733 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-068,B