UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1132L-x-AB3-R 2SB1132G-x-AB3-R 2SB1132L-x-TN3-R 2SB1132G-x-TN3-R 2SB1132L-x-TN3-T 2SB1132G-x-TN3-T www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package SOT-89 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tape Reel Tape Reel Tube 1 of 5 QW-R208-016.C 2SB1132 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Single pulse, Pw=100ms) RATINGS UNIT -40 V -32 V -5 V DC -1 A IC PULSE -2 A SOT-89 0.5 W Collector Power Dissipation PC TO-252 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Note: Measured using pulse current. SYMBOL VCBO VCEO VEBO SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT COB TEST CONDITIONS IC = -50μA IC = -1mA IE= -50μA VCB= -20V VEB= -4V IC = -500mA,IB= -50mA (Note) VCE= -3V,IC = -0.1A (Note) VCE= -5V, IE= 50mA, f=30MHz VCB= -10V, IE=0A, f=1MHz MIN -40 -32 -5 TYP -0.2 82 150 20 MAX -0.5 -0.5 -0.5 390 30 UNIT V V V μA μA V MHz pF CLASSIFICATION OF hFE RANK RANGE P 82-180 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Q 120-270 R 180-390 2 of 5 QW-R208-016.C 2SB1132 TYPICAL CHARACTERISTICS Grounded Emitter Propagation Characteristics -500 -500 -200 -100 Collector Current, Ic(mA) Collector Current, Ic(mA) VCE =-6V TA=100 -50 TA=25 -20 TA= -55 -10 -5 Grounded Emitter Output Characteristics -4.0 -2.5 -3.0 -3.5 -400 -1 0 DC Current Gain vs. Collector Current ( -1.5 -5.0 -300 -1.0 -200 -0.5 -100 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Base to Emitter Voltage, VBE(V) -2.0 -4.5 -2 TA=25 DC Current Gain vs.Collector Current ( ) ) VCE= -3V 1000 500 VCE= -3V 200 VCE= -1V DC Current Gain, hFE 1000 DC Current Gain, hFE IB =0mA -0.4 -0.8 -1.2 -1.6 -2.0 Collector to Emitter Voltage, VCE(V) TA=25 500 TA=100 200 100 100 50 50 TA=25 TA= -55 -1 -2 -1 -5 -10 -20 -50-100 -200 -500-1000 Collector Current, Ic(mA) Collector-emitter Saturation Voltage vs. Collector Current TA=25 -0.5 IC/IB=10 -0.2 -0.1 -0.05 -0.02 -0.01 -1 -2 -5 -10 -20 -50-100-200-500-1000-2000 Collector Current, Ic(mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -1.0 Collector to Emitter Voltage, VCE(V) -1 Collector Saturation Voltage, VCE(SAT) ( V) PNP SILICON TRANSISTOR -2 -5 -10 -20 -50-100 -200 -500-1000 Collector Current :Ic(mA) Collector Emitter Saturation Voltage vs. Base Current TA=25 -0.8 -0.6 IC = -500mA -0.4 -0.2 IC = -300mA 0 -1 -2 -5 -10 -20 Base Current, IB(mA) -50 -100 3 of 5 QW-R208-016.C 2SB1132 TYPICAL CHARACTERISTICS(Cont.) TA=25°C VCE = -5V 200 100 50 20 -1 Collector Output Capacitance, COB (pF) Transition Frequency, fT(MHz) Gain Bandwidth Product vs. Emitter Current -2 -5 -10 -20 -50 -100 Emitter Current, IB(mA) Collector Output Capacitance vs.Collector-Base Voltage 100 TA=25°C f=1MHz IE=0A 50 20 10 -2 -5 -10 -0.5 -1 Collector to Base Voltage, VCB(V) s 0m =1 PW -1 -0.2 * s* m 00 =1 PW DC -0.5 -0.1 -0.05 TA=25°C -0.02 *Single pulse -0.01 0 -0.2 -0.5 -1 -2 -5 -10 -20 -50 Collector to Emitter Voltage, VCE(V) Transient Thermal Resistance (°C/W) 1000 -2 -20 Transient Thermal Resistance Safe Operation Area -5 Collector Current, Ic (A) PNP SILICON TRANSISTOR TA=25°C 100 10 1 0.1 0.001 0.01 0.1 1 10 Time, t(s) 100 1000 Power Derating 1.6 1.4 1.2 TO-252 1 0.8 SOT-89 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 175 Ambient Temperature, TA ( ) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R208-016.C 2SB1132 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R208-016.C