UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) TO-252 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd Package TO-252 Pin Assignment 1 2 3 B C E Packing Tape Reel 1 of 5 QW-R209-021.B 2SB1412 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Collector Current(DC) IC -5 A Collector Current(PULSE) Single pulse, Pw=10ms ICP -10 A Collector Power Dissipation PD 1 W Collector Power Dissipation (note2) PD 10(TC=25°C) W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2.When mounted on a 40*40*0.7mm ceramic board. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector Base Breakdown Voltage BVCBO IC= -50μA Collector Emitter Breakdown Voltage BVCEO IC= -1mA Emitter Base Breakdown Voltage BVEBO IE= -50μA Collector Cut-Off Current ICBO VCB= -20V Emitter Cut-Off Current IEBO VEB= -5V DC Current Transfer Ratio hFE VCE= -2V,Ic= -0.5A Collector-Emitter Saturation Voltage VCE(SAT) IC/IB= -4A/-0.1A Transition Frequency fT VCE= -6V, IE= 50 mA, f=30MHz Output Capacitance COB VCB= -20V, IE= 0 A, f=1MHz MIN -30 -20 -6 TYP MAX -0.5 -0.5 390 -1.0 82 120 60 UNIT V V V μA μA V MHz pF CLASSIFICATION OF hFE RANK RANGE P 82-180 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Q 120-270 R 180-390 2 of 5 QW-R209-021.B 2SB1412 TYPICAL CHARACTERISTICS Grounded Emitter Propagation Characteristics Grounded Emitter Output Characteristics -2 -1 -500m -5 Ta=100℃ Collector Current: Ic(A) Collector Current: Ic(mA) -10 -5 VCE = -2V Ta=25℃ -200m -100m -50m Ta= -25℃ -20m -10m -5m -2m -1m 0 -0.2 -0.4 -0.6 -0.8 -30mA Ta=25℃ -25mA -20mA -15mA -3 -10mA -35mA -2 -40mA -5mA -1 -0.4 -0.8 -1.2 IB =0mA -1.6 -2.0 Base to Emitter Voltage:VBE(V) Collector to Emitter Voltage:VCE(V) DC Current Gain vs.Collector Current (I) DC Current Gain vs.Collector Current(II) 5k Ta=25℃ 1k 500 VcE= -5V 200 100 VcE= -2V VcE= -1V 50 VcE= -1V 2k DC Current Gain: hFE 2k DC Current Gain: hFE -4 -50mA -45mA 0 0 -1.0 -1.2 -1.4 5k 1k 500 200 100 Ta=100℃ Ta=25℃ Ta= -25℃ 50 20 10 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current : Ic(A) Collector Current : Ic(A) 5k VcE= -2V 2k 1k Ta=100℃ 500 200 100 Ta= -25℃ Ta=25℃ 50 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Collector Current : Ic(A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Saturation Voltage:VCE(SAT) ( V) DC Current Gain vs.Collector Current (III) DC Current Gain: hFE PNP SILICON TRANSISTOR -5 Collector-emitter Saturation Voltage vs.Collector Current (I) Ta=25℃ -2 -1 -0.5 -0.2 -0.1 Ic/IB=50/1 40/1 30/1 10/1 -0.05 -0.02 -0.01 -2m -5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current : Ic(A) 3 of 5 QW-R209-021.B 2SB1412 -2 -1 -0.5 -0.2 -0.1 Ta=100℃ -0.05 Ta=25℃ -0.02 -0.01 -2m -5m -5 Ta= -25℃ -0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Ic/IB=30 -2 -1 Ta=100℃ -0.5 Ta=25℃ -0.2 -0.1 -0.05 Ta= -25℃ -0.02 -0.01 -2m -5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Collector Current : Ic(A) Collector-emitter Saturation Voltage vs.Collector Current (IV) Collector-emitter Saturation Voltage vs.Collector Current (V) Ic/IB=40 Ta= -25℃ -1 Ta=25℃ -0.5 -0.2 Ta=100℃ -0.1 -0.05 -5 Ic/IB=50 Ta= -25℃ -2 Ta=25℃ -1 Ta=100℃ -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -2m -5m -0.02 -0.01 -2m -0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Collector Current : Ic(A) Gain Bandwidth Product vs.Emitter Current Ta=25℃ VcE= -6V 500 200 100 50 20 10 5 2 1 1 -5 Collector-emitter Saturation Voltage vs.Collector Current (III) Collector Current : Ic(A) -2 1000 Collector Saturation Voltage:VCE(SAT) ( V) Ic/IB=10 Collector Saturation Voltage:VCE(SAT) ( V) -5 Collector-emitter Saturation Voltage vs.Collector Current (II) 2 5 10 20 50 100200 500 1000 Emitter Current : IE(mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Output Capacitance :Cob (pF) Collector Saturation Voltage:VCE(SAT) ( V) Collector Saturation Voltage:VCE(SAT) ( V) TYPICAL CHARACTERISTICS(Cont.) Transetion Frequency :fT (MHz) PNP SILICON TRANSISTOR 1000 -5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Collector Current : Ic(A) Collector Output Capacitance vs.Collector-Base Voltage Ta=25℃ f =1MHz IE=0A 500 200 100 50 20 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 Collector to Base Voltage:VCB (V) 4 of 5 QW-R209-021.B 2SB1412 TYPICAL CHARACTERISTICS(Cont.) Emitter Input Capacitance vs.EmitterBase Voltage 1000 Emitter Input Capacitance:Cib (pF) PNP SILICON TRANSISTOR Ta=25℃ f=1MHz Ic=0A 500 200 100 50 20 -0.1 -0.2 -0.5 -1 -2 -5 -10 Emitter To Base Voltage : VEB(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-021.B