UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB1386-x-AB3-F-R 2SB1386L-x-AB3-F-R www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tube 1 of 5 QW-R208-019,B 2SB1386 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Collector-Emitter Voltage VEBO -6 V Collector Current (DC) IC(DC) -5 A Collector Current (Pulse)(Note1) IC(PULSE) -10 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note 1. Single pulse, Pw=10ms 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO VCE(SAT) ICBO IEBO hFE fT Cob TEST CONDITIONS IC= -50μA IC= -1mA IE= -50μA IC/IB= -4A/-0.1A VCB= -20V VEB= -5V VCE= -2V, IC= -0.5A VCE= -6V, IE= 50mA, f=30MHz VCB= -20V, IE= 0A, f=1MHz MIN -30 -20 -6 TYP MAX -1.0 -0.5 -0.5 390 82 120 60 UNIT V V V V μA μA MHz pF CLASSIFICATION OF hFE RANK RANGE P 82-180 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Q 120-270 R 180-390 2 of 5 QW-R208-019,B 2SB1386 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector Current vs. Base to Emitter Voltage -10 -5 VCE = -2V -2 -1 -500m -200m -100m -50m -5 Ta=100℃ -4 Ta=25℃ -3 -30mA Ta=25℃ -25mA -20mA -10mA Ta= -25℃ -35mA -2 -40mA -5mA -1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base to Emitter Voltage, VBE(V) DC Current Gain vs. Collector Current(1) 5k 2k -50mA -45mA -15mA -20m -10m -5m -2m -1m 0 Collector Current vs. Collector to Emitter Voltage Ta=25℃ 0 0 IB =0mA -0.4 -0.8 -1.2 -1.6 -2.0 Collector to Emitter Voltage, VCE(V) DC Current Gain vs. Collector Current(2) 5k 2k VcE= -1V 1k 1k Ta=100℃ 500 500 VcE= -5V 200 100 VcE= -2V VcE= -1V 50 200 100 Ta=25℃ Ta= -25℃ 50 20 10 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current, Ic(A) 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Collector Current, IC(A) DC Current Gain vs. Collector Current 5k -5 VcE= -2V Ta=25℃ 2k -2 1k -1 Ta=100℃ 500 200 100 Collector-Emitter Saturation Voltage vs. Collector Current (1) -0.5 Ta= -25℃ -0.2 Ta=25℃ 50 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current, Ic(A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -0.1 Ic/IB=50/1 40/1 30/1 10/1 -0.05 -0.02 -0.01 -2m -5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Collector Current, Ic(A) 3 of 5 QW-R208-019,B 2SB1386 TYPICAL CHARACTERICS(Cont.) Collector-Emitter Saturation Voltage vs. Collector Current (2) Ic/IB=10 -2 -1 -0.5 -0.2 -0.1 Ta=100℃ -0.05 Ta=25℃ -0.02 -0.01 -2m -5m Ta= -25℃ -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Saturation Voltage, VCE(SAT) ( V) Collector Saturation Voltage, VCE(SAT) (V) -5 -5 Collector-Emitter Saturation Voltage vs. Collector Current (3) Ic/IB=30 -2 -1 Ta=100℃ -0.5 Ta=25℃ -0.2 -0.1 -0.05 Ta= -25℃ -0.02 -0.01 -2m Collector Current, Ic(A) Collector-Emitter Saturation Voltage vs. Collector Current (IV) Ic/IB=40 -2 Ta= -25℃ -1 Ta=25℃ -0.5 -0.2 Ta=100℃ -0.1 -0.05 -0.02 -0.01 -2m -5m -0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Saturation Voltage, VCE(SAT)(V) Collector Saturation Voltage, VCE(SAT) ( V) -5 -5 500 Ta=25℃ VcE= -6V 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100200 500 1000 Emitter Current, IE(mA) Collector Output Capacitance, Cob (pF) Transetion Frequency vs. Emitter Current 1000 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Collector Current, Ic(A) Collector-Emitter Saturation Voltage vs. Collector Current (V) Ic/IB=50 -2 Ta= -25℃ Ta=25℃ -1 Ta=100℃ -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -2m Collector Current, Ic(A) Transetion Frequency, fT (MHz) PNP SILICON TRANSISTOR 1000 500 -5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Collector Current, Ic(A) Collector Output Capacitance vs. Collector-Base Voltage Ta=25℃ f =1MHz IE=0A 200 100 50 20 10 -5 -10 -20 -0.1 -0.2 -0.5 -1 -2 Collector to Base Voltage, VCB(V) -50 4 of 5 QW-R208-019,B 2SB1386 PNP SILICON TRANSISTOR TYPICAL CHARACTERICS(Cont.) Emitter Input Capacitance, Cib (pF) 1000 Emitter Input Capacitance vs. EmitterBase Voltage 500 Ic=0A 200 100 50 20 -0.1 Ta=25℃ f=1MHz -0.2 -0.5 -1 -2 -5 -10 Emitter To Base Voltage, VEB(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R208-019,B