NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V line–operated switch–mode appliations. Applications: D Switching Regulators D PWM Inverters and Motor Controls D Deflection Circuits D Solenoid and Relay Drivers Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector–Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C Total Device Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperatur Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperatur Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . +275°C Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%. Electrical Charactetristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 100mA, IB = 0 400 – – V VCEX(sus) IC = 8A, Vclamp = 450V, TC = +100°C 450 – – V 300 – – V VCEV = 850V, VBE(off) = 1.5V – – 1.0 mA VCEV = 850V, VBE(off) = 1.5V, TC = +100°C – – 4.0 mA ICER VCE = 850V, RBE = 50Ω, TC = +100°C – – 5.0 mA IEBO VEB = 9V, IC = 0 – – 1.0 mA IS/b VCE = 100V, t = 1.0s (non–repetitive) 0.2 – – A hFE VCE = 2V, IC = 5A 12 – 60 VCE = 2V, IC = 10A 6 – 30 IC = 10A, IB = 2A – – 1.5 V IC = 10A, IB = 2A, TC = +100°C – – 2.5 V IC = 15A, IB = 3A – – 5.0 V IC = 10A, IB = 2A – – 1.6 V IC = 10A, IB = 2A, TC = +100°C – – 1.6 V OFF Characteristics (Note 2) Collector–Emitter Sustaining Voltage IC = 15A, Vclamp = 300V, TC = +100°C Collector Cutoff Current Emitter Cutoff Current ICEV Second Breakdown Second Breakdown Collector Current with Base Forward Bias ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Dynamic Characteristics Current Gain–Bandwidth Product Output Capacitance fT Cob VCE = 10V, IC = 500mA, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 6 – 28 MHz 125 – 500 pF – – 0.05 µs – – 1.0 µs Switching Characteristics (Resistive Load) Delay Time td Rise Time tr Storage Time ts – – 4.0 µs Fall Time tf – – 0.7 µs – 2.0 – µs 0.09 – – µs – – 5.0 µs – – 1.5 µs VCC = 250V, IC = 10A, IB1 = IB2 =2A, tp = 300µs, µ Duty Cycle ≤ 2% Switching Characteristics (Inductive Load, Clamped) Storage Time tsv Fall Time tfi Storage Time tsv Fall Time tfi IC = 10A peak, Vclamp = 450V, IB1 = 2A, VBE(off) = 5V IC = 10A peak, Vclamp = 450V, IB1 = 2A, VBE(off) = 5V, TJ = +100°C ° Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case