NTE NTE52

NTE52
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed
power switching in inductive circuits where fall time is critical. This device is particularly suited for
line–operated switch–mode appliations.
Applications:
D Switching Regulators
D Motor Controls
D Inverters
D Solenoid and Relay Drivers
Features:
D Fast Turn–Off Times:
100ns Inductive Fall Time @ +25°C (Typ)
150ns Inductive Crossover Time @ +25°C (Typ)
400ns Inductive Storage Time @ +25°C (Typ)
D Operating Temperature Range: –65° to +200°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.714W/°C
Total Device Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71.5W
Operating Junction Temperatur Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperatur Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W
Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . +275°C
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Charactetristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
450
–
–
V
VCEV = 750V, VBE(off) = 1.5V
–
–
0.5
mA
VCEV = 750V, VBE(off) = 1.5V,
TC = +100°C
–
–
2.5
mA
ICER
VCEV = 750V, RBE = 50Ω, TC = +100°C
–
–
3.0
mA
IEBO
VEB = 6V, IC = 0
–
–
1.0
mA
hFE
VCE = 5V, IC = 3A
8
–
–
VCE(sat)
IC = 3A, IB = 0.6A
–
–
1.0
V
IC = 3A, IB = 0.6A, TC = +100°C
–
–
2.0
V
IC = 5A, IB = 1A
–
–
3.0
V
IC = 3A, IB = 0.6A
–
–
1.5
V
IC = 3A, IB = 0.6A, TC = +100°C
–
–
1.5
V
VCB = 10V, IE = 0, f = 1kHz
–
–
250
pF
VCC = 250V, IC = 3A, IB1 = 0.4A,
µ
VBE(off) = 5V, tp = 300µs,
Duty Cycle ≤ 2%
–
0.03
0.05
µs
–
0.10
1.40
µs
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 100mA, IB = 0
ICEV
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VBE(sat)
Dynamic Characteristics
Output Capacitance
Cob
Switching Characteristics (Resistive Load)
Delay Time
td
Rise Time
tr
Storage Time
ts
–
0.40
0.50
µs
Fall Time
tf
–
0.175 0.500
µs
–
0.40
–
µs
–
0.15
–
µs
–
0.10
–
µs
–
0.70
2.0
µs
–
0.28
0.50
µs
–
0.15
0.30
µs
Switching Characteristics (Inductive Load, Clamped)
Storage Time
tsv
Crossover Time
tc
Fall Time
tfi
Storage Time
tsv
Crossover Time
tc
Fall Time
tfi
IC = 3A peak, Vclamp = 250V, IB1 = 0.4A,
VBE(off) = 5V
IC = 3A peak, Vclamp = 250V, IB1 = 0.4A,
VBE(off) = 5V, TJ = +100°C
°
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case