2N6678 MECHANICAL DATA Dimensions in mm (inches) HIGH VOLTAGE NPN POWER TRANSISTOR 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . FEATURES 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 2 .1 9 (0 .4 8 ) 1 .6 3 (0 .0 6 4 ) 1 1 .1 8 (0 .4 4 ) 1 .5 2 (0 .0 6 0 ) 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) D ia . 3 0 .4 0 (1 .1 9 7 ) 2 9 .9 0 (1 .1 7 7 ) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • CECC SCREENING OPTIONS 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) 2 P ls • SPACE QUALITY LEVELS OPTIONS • JAN LEVEL SCREENING OPTIONS 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 1 6 .9 7 (0 .6 6 8 ) 1 6 .8 7 (0 .6 6 4 ) TO-3 (TO-204AA) Pin 1 – Base APPLICATIONS: The 2N6678 is intended for use in switching regulators and inverter circuits. Underside View Pin 2 – Emitter Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEX VCEO VEBO IC ICM IB PTOT Tj , Tstg Collector - Emitter Voltage Collector - Emitter Voltage (IB =0) Collector - Emitter Voltage (IC =0) Collector Current Collector Peak Current Base Current Total Power Dissipation @ Tcase < 25°C Maximum Junction And Storage Temperature 350V 300V 8V 15A 20A 5A 175W -65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 4092 Issue 1 2N6678 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter IEBO ICEV Emitter Cut-off Current Collector Cut-off Current (VBE=-1.5V) Test Conditions IC=0 Min. VEB=8V Typ. Max. 2 VCE=450V 0.1 VCE=450V TC=100°C Collector-Emitter Sustaining Voltage IC=0.2A LC=25mH hFE* DC Current Gain IC=15A VCE=3V VCE(sat)* Collector-Emitter Saturation Voltage IC=15A IB=3A 1 TC=100°C 2 Base-Emitter Saturation Voltage Rise Time Storage Time Fall Time RθJC Thermal Resistance Junction - Case IC=15A IB=3A IC=15A VCC=200V IB1= -IB2=3A VBB=-6V mA 1 VCEO(sus)* VBE(sat)* tr ts tf Unit 400 V 8 1.5 0.6 2.5 0.5 1.0 V µs °C/W * Pulsed: Pulse Duration = 300µs, duty cycle = 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 4092 Issue 1