NTE NTE6232

NTE6232
Powerblock Module
Description:
The NTE6232 uses 2 power diodes in series and the semiconductors are electrically isolated from
the metal base, allowing common heatsinks and compact assemblies to be built. This device is
intended for general purpose applications such as battery chargers, welders and plating equipment
and where high voltage and high current are required.
Features:
D Standard Voltage
D Electrically Isolated Base Plate
D 3500VRMS Isolating Voltage
D High Surge Capability
D Large Creepage Distances
Ratings and Characteristics:
Average Forward Current (TC = +92°C, 180° Conduction, Half Sine Wave), IF(AV) . . . . . . . . . . 100A
Maximum RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141A
Maximum Repetitive Peak Reverse and Off–State Blocking Voltage, VRRM, VDRM . . . . . . . . 1600V
Maximum Non–Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Maximum Peak Reverse Current (TJ = +125°C), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3500V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case (Per Module, DC Operation), RthJC . . . . . . . . . . . 0.22°C/W
Thermal Resistance, Case–to–Sink (Note 1), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1°C/W
Note 1. Mounting surface flat, smooth and greased.
Electrical Specifications:
Parameter
Maximum Peak One–Cycle
Non–Repetitive Surge Current
Symbol
IFSM
Test Conditions
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Rating
Unit
Sinusoidal Half Wave, 100% VRRM
Reapplied, Initial TJ = +150°C
°
1700
A
1780
A
Sinusoidal Half Wave, No Voltage
Reapplied, Initial TJ = +150°C
°
2020
A
2110
A
Electrical Specifications (Cont’d):
Parameter
Maximum
I2t
Symbol
I2t
for Fusing
Test Conditions
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum I2pt
I2pt
Rating
Unit
Sinusoidal Half Wave, 100% VRRM
Reapplied, Initial TJ = +150°C
°
14450
A2s
13190
A2s
Sinusoidal Half Wave, No Voltage
Reapplied, Initial TJ = +150°C
°
20430
A2s
18650
A2s
t = 0.1 to 10ms, no voltage reapplied
204300 A2pt
Threshold Voltage, Low level
VF(TO)1
TJ = +150°C, (16.7% x π x IT(AV) < I < π x IT(AV))
0.66
V
Threshold Voltage, High level
VF(TO)2
TJ = +150°C, (π x IT(AV) < I < 20 x π x IT(AV))
0.74
V
Forward Slope Resistance, Low Level
rf1
TJ = +150°C, (16.7% x π x IT(AV) < I < π x IT(AV))
1.81
mΩ
Forward Slope Resistance, High Level
rf2
TJ = +150°C, (π x IT(AV) < I < 20 x π x IT(AV))
1.57
mΩ
VFM
TJ = +25°C, IFM = π x IF(AV),
Av. Power = VF(TO) x IT(AV) + rf x (IF(RMS))2
1.3
V
Maximum Forward Voltage Drop
Circuit Diagram
+
AC
AC
+
–
–
.787 (20.0)
.550 (14.0)
.787
(20.0)
.787
(20.0)
.393
(10.0)
3.150 (80.0)
.244 (6.2) Dia
M5 Screw (3 Places)
1.180
(30.0)
1.195
(30.0)
3.620 (91.9)