2SB1667(SM) TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −60 V Emitter-base voltage VEBO −7 V Collector current IC −3 A Base current IB −0.5 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.5 25 W Tj 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Note1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10S2A temperature/current/voltage and the significant change in Weight: 1.4 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 2SB1667(SM) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −60 V, IE = 0 ― ― −100 μA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ― ― −100 μA V (BR) CEO IC = −50 mA, IB = 0 −60 ― ― V VCE = −5 V, IC = −0.5 A 60 ― 300 hFE (2) VCE = −5 V, IC = −3 A 20 ― ― VCE (sat) IC = −3 A, IB = −0.3 A ― −0.5 −1.7 V Collector-emitter breakdown voltage hFE (1) (Note 2) DC current gain Collector-emitter saturation voltage Base-emitter voltage VBE VCE = −5 A, IC = −0.5 A ― −0.7 −1.0 V Transition frequency fT VCE = −5 V, IC = −0.5 A ― 9 ― MHz VCB = −10 V, IE = 0, f = 1 MHz ― 150 ― pF ― 0.4 ― ― 1.7 ― ― 0.5 ― Cob Turn-on time ton Storage time tstg IB1 Switching time Input IB2 20 μs IB1 IB2 Output 15 Ω Collector output capacitance μs VCC = −30 V Fall time tf IB1 = 0.2 A,IB2 = 0.2 A, duty cycle ≤ 1% Note 2: hFE (1) classification O: 60 to 120, Y: 100 to 200, GR: 150 to 300 Marking B1667 Part No. (or abbreviation code) Lot No. Note 3 Characteristics indicator Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 2SB1667(SM) IC – VBE IC – VCE −4 −3.0 Common emitter Common emitter −3 −70 −60 Collector current IC −50 Collector current IC VCE = −5 V (A) (A) Tc = 25°C −80 −40 −30 −2 −20 IB = −10 mA −1 Tc = 100°C −2.0 25 −25 −1.0 0 0 0 −1 −2 −3 Collector-emitter voltage −4 0 0 −5 −0.4 VCE (V) −0.8 Base-emitter voltage hFE – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = −5V Tc = 100°C 25 −25 100 50 −0.3 −0.1 −1 Collector current IC VBE (V) −1 Common emitter IC/IB = 10 −0.5 −0.3 Tc = 100°C 25 −0.1 −25 −0.05 −0.02 −0.02 −3 −0.1 −1 −0.3 Collector current IC −3 −5 (A) (A) rth – tw 100 Curves should be applied in thermal No heat sink limited area. Transient thermal resistance rth (°C/W) DC current gain hFE 500 20 −0.02 −1.6 VCE (sat) – IC 1000 300 −1.2 (Single nonrepetitive pulse) 10 Infinite heat sink 1 0 0.001 0.01 0.1 1 Pulse width 3 10 tw 100 1000 (s) 2009-12-21 2SB1667(SM) PC – Ta Safe operation area 10 IC max (pulse)* Infinite heat sink 25 1 ms* IC max (continous) 15 10 5 0 0 10 ms* (A) 20 Collector current IC Collector power dissipation PC (W) 30 1 DC operation Tc = 25°C 100 ms* 1 s* No heat sink *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with 50 100 150 200 increase in temperature. 0.1 1 Ambient temperature Ta (°C) 10 Collector-emitter voltage 4 100 VCE (V) 2009-12-21 2SB1667(SM) RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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