2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1452A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6 V Collector current IC 12 A Base current IB 2 A PC 30 W Tj 150 °C Tstg −55 to 150 °C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range JEDEC ― JEITA ― TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-12-21 2SC3710A Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 80 V, IE = 0 ― ― 10 μA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 10 μA V (BR) CEO IC = 50 mA, IB = 0 80 ― ― V VCE = 1 V, IC = 1 A 70 ― 240 hFE (2) VCE = 1 V, IC = 6 A 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 6 A, IB = 0.3 A ― 0.2 0.4 V Base-emitter saturation voltage VBE (sat) IC = 6 A, IB = 0.3 A ― 0.9 1.2 V fT VCE = 5 V, IC = 1 A ― 80 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 220 ― pF ― 0.2 ― ― 1 ― ― 0.2 ― hFE (1) DC current gain (Note) Transition frequency Collector output capacitance Cob Turn-on time ton Storage time tstg IB2 Switching time Input IB1 20 μs IB1 Output IB2 5Ω Collector-emitter breakdown voltage μs VCC ≈ 30 V Fall time tf IB1 = 0.3 A,IB2 = 0.3 A, duty cycle ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C3710A Characteristics indicator Part No. (or abbreviation code) Lot No. NOTE 2： Note 2 : A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-12-21 2SC3710A IC – VCE VCE – IC 1.0 Common emitter Tc = 25°C 50 40 8 Collector-emitter voltage (A) Collector current IC 60 VCE (V) 100 80 70 10 30 6 20 4 IB = 10 mA 2 0.8 Common emitter Tc = 25°C IB = 20 mA 40 60 80 100 150 200 0.6 300 0.4 400 600 0.2 0 0 0 2 4 6 8 10 Collector-emitter voltage 12 0 0 14 2 VCE (V) VCE – IC (A) VCE – IC 40 60 80 100 150 VCE (V) Common emitter Tc = −55°C IB = 20 mA 200 Collector-emitter voltage VCE (V) Collector-emitter voltage 12 1.0 0.6 300 0.4 600 0.2 0 0 2 6 4 10 8 Collector current IC Common emitter Tc = 100°C 0.8 IB = 50 mA 100 400 0.4 700 0.2 2 Collector-emitter saturation voltage VCE (sat) (V) 25 −55 50 30 1 12 (A) VCE (sat) – IC Common emitter VCE = 1 V 0.3 10 8 Collector current IC Tc = 100°C 10 0.1 6 4 (A) 1 100 200 300 hFE – IC 300 150 0.6 0 0 12 500 DC current gain hFE 10 8 Collector current IC 1.0 0.8 6 4 3 Collector current IC 10 0.5 0.3 0.1 0.05 (A) Tc = −55°C 25 100 0.02 0.1 20 Common emitter IC/IB = 20 0.3 1 3 Collector current IC 3 10 20 (A) 2010-12-21 2SC3710A VBE (sat) – IC IC – VBE 10 Common emitter IC/IB = 20 Common emitter VCE = 1 V 8 (A) 3 Tc = −55°C 1 0.5 25 Collector current IC Base-emitter saturation voltage VBE (sat) (V) 5 100 0.3 0.1 0.1 0.3 1 3 10 Collector current IC 6 Tc = 100°C 25 4 −55 2 20 (A) 0 0 0.4 0.8 1.2 1.6 Base-emitter voltage 2.0 2.4 VBE (V) rth – tw Transient thermal resistance rth (°C/W) 100 Curves should be applied in thermal limited area. 30 (2) (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 10 (1) 3 1 0.3 0.1 0.001 0.1 0.01 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 30 5 10 ms* PC 3 DC operation Tc = 25°C 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with VCEO increase in temperature. max 0.1 3 10 30 1 Collector-emitter voltage (1) Tc = Ta Infinite heat sink (2) No heat sink (W) 10 I max C (continuous) PC – Ta 50 1 ms* Collector power dissipation Collector current IC (A) IC max (pulsed)* 40 (1) 30 20 10 (2) 0 0 100 VCE (V) 40 80 120 160 200 240 Ambient temperature Ta (°C) 4 2010-12-21 2SC3710A RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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