2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −2 A Base current IB −0.2 A Collector power dissipation PC 900 mW Junction temperature Tj 150 °C JEITA Tstg −55 to 150 °C TOSHIBA Storage temperature range JEDEC TO-92MOD ― 2-5J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-11-09 2SA1020 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Collector cut-off current ICBO Test Condition VCB = −50 V, IE = 0 Min Typ. Max Unit ⎯ ⎯ −1 μA IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −1 μA V (BR) CEO IC = −10 mA, IB = 0 −50 ⎯ ⎯ V hFE (1) VCE = −2 V, IC = −0.5 A 70 ⎯ 240 hFE (2) VCE = −2 V, IC = −1.5 A 40 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = −1 A, IB = −0.05 A ⎯ ⎯ −0.5 V Base-emitter saturation voltage VBE (sat) IC = −1 A, IB = −0.05 A ⎯ ⎯ −1.2 V fT VCE = −2 V, IC = −0.5 A ⎯ 100 ⎯ MHz VCB = −10 V, IE = 0, f = 1 MHz ⎯ 40 ⎯ pF ⎯ 0.1 ⎯ ⎯ 1 ⎯ ⎯ 0.1 ⎯ Collector-emitter breakdown voltage DC current gain Transition frequency Collector output capacitance Cob Turn-on time ton 20 μs Input Storage time tstg Fall time tf IB1 IB2 Switching time Output IB2 30 Ω Emitter cut-off current IB1 μs VCC = −30 V IB1 = 0.05 A , IB2 = 0.05 A DUTY CYCLE ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking A1020 Part No. (or abbreviation code) Lot No. Characteristics indicator Note 2: Note 2 A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-11-09 2SA1020 VCE – IC VCE – IC −1.0 −1.0 VCE (V) −0.8 Common emitter Ta = 25°C −10 −20 −40 −80 −120 Collector-emitter voltage Collector-emitter voltage VCE (V) Common emitter IB = −5 mA −0.6 −160 −200 −0.4 −0.2 0 0 −0.4 −0.8 −1.2 −1.6 Collector current IC −2.0 −2.4 −20 −30 −40 −60 −0.8 −80 IB = −5 mA −120 −0.6 −160 −180 −200 −0.4 −0.2 0 0 −2.8 −0.4 −0.8 (A) −1.2 −1.6 Collector current IC −40 IB = −10 mA −20 −60 −2.8 (A) Common emitter VCE = −2 V −30 500 Ta = −55°C DC current gain hFE VCE (V) Collector-emitter voltage −2.4 1000 Common emitter −80 −120 −0.6 −160 −0.4 −200 300 Ta = 100°C 25 100 50 −55 30 −0.2 10 −0.01 0 0 −0.4 −0.8 −1.2 −1.6 Collector current IC −2.0 −2.4 −0.03 −2.8 −0.1 Collector current IC VCE (sat) – IC −3 −1 (A) VBE (sat) – IC −10 Common emitter IC/IB = 20 Common emitter Base-emitter saturation voltage VBE (sat) (V) −0.5 −0.3 (A) −1 Collector-emitter saturation voltage VCE (sat) (V) −2.0 hFE – IC VCE – IC −1.0 −0.8 Ta = 100°C −0.3 Ta = 100°C −0.1 −0.05 −55 −0.03 −0.01 −0.01 25 −0.03 −0.1 −0.3 Collector current IC −1 −5 −1 (A) Ta = −55°C −0.5 −0.3 −0.1 −0.01 −3 IC/IB = 20 −3 25 100 −0.03 −0.1 −0.3 Collector current IC 3 −1 −3 (A) 2010-11-09 2SA1020 IC – VBE PC – Ta −2.0 1000 PC (mW) Common emitter −1.0 Ta = 100°C 25 Collector power dissipation Collector current IC (A) VCE = −2 V −1.5 −55 −0.5 0 0 −0.4 −0.8 −1.2 Base-emitter voltage −1.6 800 600 400 200 0 0 −2.0 40 80 120 160 200 240 Ambient temperature Ta (°C) VBE (V) Safe Operating Area −5 −3 10 ms* IC max (pulsed)* IC max (continuous) 1 ms* 100 ms* Collector current IC (A) −1 1 s* −0.5 DC operation Ta = 25°C −0.3 −0.1 −0.05 −0.03 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.01 −0.1 −0.3 −0.5 −1 −3 −5 Collector-emitter voltage VCEO max −10 −30 −50 −100 VCE (V) 4 2010-11-09 2SA1020 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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