2SB739 Silicon PNP Epitaxial REJ03G0650-0200 (Previous ADE-208-1030) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD787 and 2SD788 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC PC Ratings –20 –20 –6 –2 0.9 Unit V V V A W Tj Tstg 150 –55 to +150 °C °C 2SB739 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Rev.2.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Min –20 –20 –6 — — 160 — — — Typ — — — — — — — 150 50 Max — — — –2 –0.2 320 –0.3 — — Unit V V V µA µA V MHz pF Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –16 V, IE = 0 VEB = –6 V, IC = 0 VCE = –2 V, IC = –0.1 A IC = –1 A, IB = –0.1 A VCE = –2 V, IC = –10 mA VCB = –10 V, IE = 0, f = 1 MHz 2SB739 Main Characteristics 1.2 Collector Current IC (mA) –100 0.8 0.4 –0 .35 –0 –80 .3 –0. 25 –0.2 –60 5 –0.1 –40 –0.1 –20 –0.05 mA IB = 0 50 0 100 0 150 –2 –4 –6 –8 –10 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) Typical Transfer Characteristics –2.0 Collector Current IC (A) Typical Output Characteristics (1) –1,000 –25 –20 –15 –1.6 Collector Current IC (mA) Collector Power Dissipation PC (W) Maximum Collector Dissipation Curve –10 –1.2 –5 mA –0.8 PC = 0. 9W –0.4 VCE = –2 V Pulse –300 –100 Ta = 75°C –30 25 –25 –10 –3 –1 0 –0.4 –0.8 –1.2 –1.6 –2.0 0 DC Current Transfer Ratio hFE Pulse VCE = –2V Ta = 75°C 1,000 25 300 100 –25 30 10 –1 –3 –10 –30 –100 –300 –1,000 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 Collector to Emitter Saturation Voltage VEC (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) DC Current Transfer Ratio vs. Collector Current 3,000 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) 10,000 –0.2 Saturation Voltage vs. Collector Current –3.0 VBE (sat) –1.0 –0.3 –0.1 VCE (sat) –0.03 Pulse IC = 10 IB –0.01 –0.003 –3 –10 –30 –100 –300 –1,000 –3,000 Collector Current IC (mA) 2SB739 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 1,000 f = 1 MHz IE = 0 300 100 30 10 –0.1 –0.3 –1.0 –3 –10 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SB739 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SB739CTZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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