2SA1029, 2SA1030 Silicon PNP Epitaxial REJ03G0633-0300 (Previous ADE-208-1004A) Rev.3.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Rev.3.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC IE PC 2SA1029 –30 –30 –5 –100 100 300 2SA1030 –55 –50 –5 –100 100 300 Unit V V V mA mA mW Tj Tstg 150 –55 to +150 150 –55 to +150 °C °C 2SA1029, 2SA1030 Electrical Characteristics (Ta = 25°C) Collector to base breakdown voltage V(BR)CBO 2SA1029 Min Typ Max –30 — — Collector to emitter breakdown voltage V(BR)CEO –30 — — –50 — Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio V(BR)EBO –5 — — –5 ICBO IEBO hFE*1 — — 100 — — — –0.5 –0.5 500 Base to emitter voltage VBE — — Collector to emitter saturation voltage Gain bandwidth product VCE(sat) — fT 200 Item Symbol 2SA1030 Min Typ Max –55 — — Unit V Test conditions IC = –10 µA, IE = 0 — V IC = –1 mA, RBE = ∞ — — V IE = –10 µA, IC = 0 — — 100 — — — –0.5 –0.5 320 µA µA VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 –0.8 — — –0.8 V VCE = –12 V, IC = –2 mA — –0.2 — — –0.2 V IC = –10 mA, IB = –1 mA 280 — 200 280 — MHz VCB = –12 V, IC = –2 mA 3.3 4.0 pF Cob — 3.3 4.0 — Collector output capacitance Note: 1. The 2SA1029 and 2SA1030 are grouped by hFE as follows. B C D 2SA1029 100 to 200 160 to 320 250 to 500 2SA1030 100 to 200 160 to 320 — Rev.3.00 Aug 10, 2005 page 2 of 5 VCE = –12 V, IC = –2 mA VCB = –10 V, IE = 0, f = 1 MHz 2SA1029, 2SA1030 Main Characteristics Typical Output Characteristics (1) 300 –5 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 200 100 –25 –4 –20 –3 –15 –2 –10 –1 –5 µA IB = 0 50 0 100 150 0 Ambient Temperature Ta (°C) –0.2 –0.4 –0.6 –0.8 –1.0 Collector Emitter Voltage VCE (V) Typical Output Characteristics (2) Typical Transfer Characteristics –5 –5 –15 –3 –2 –10 –1 –5 µA VCE = –12 V –4 –3 –2 25 –20 –4 Ta = 75°C Collector Current IC (mA) Collector Current IC (mA) –25 –1 IB = 0 0 –5 –10 –15 –20 –25 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) DC Current Transfer Ratio hFE –0.2 Collector Emitter Voltage VCE (V) 500 400 0 VCE = –12 V 300 200 100 0 –0.01 –0.1 –1.0 –10 Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 5 –100 500 400 VCE = –12 V 300 200 100 0 –0.5 –1.0 –2 –5 –10 Collector Current IC (mA) –20 Collector to Emitter Saturation Voltage VCE(sat) (V) 2SA1029, 2SA1030 Rev.3.00 Aug 10, 2005 page 4 of 5 Collector to Emitter Saturation Voltage vs. Collector Current –0.28 IC = 10 IB –0.24 –0.20 –0.16 –0.12 5°C –0.08 Ta =7 –0.04 25 0 –1 –2 –5 –10 –20 –50 –100 Collector Current IC (mA) 2SA1029, 2SA1030 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SA1029BTZ 2SA1029CTZ 2SA1029DTZ 2SA1030BTZ 2SA1030CTZ Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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