RENESAS 2SD1306

2SD1306
Silicon NPN Epitaxial
REJ03G0784-0200
(Previous ADE-208-1144)
Rev.2.00
Aug.10.2005
Application
Low frequency amplifier, Muting
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
1. Emitter
2. Base
3. Collector
3
1
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Rev.2.00 Aug 10, 2005 page 1 of 5
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
15
5
0.7
150
150
–55 to +150
Unit
V
V
V
A
mW
°C
°C
2SD1306
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Collector to base breakdown voltage
V(BR)CBO
Collector to emitter breakdown voltage
V(BR)CEO
Emitter to base breakdown voltage
V(BR)EBO
Collector cutoff current
ICBO
DC current transfer ratio
hFE*1
Base to emitter voltage
VBE
Collector to emitter saturation voltage
VCE(sat)
Gain bandwidth product
fT
Notes: 1. The 2SD1306 is grouped by hFE as follows.
2. Pulse test
Grade
D
E
Mark
ND
NE
hFE
250 to 500
400 to 800
Rev.2.00 Aug 10, 2005 page 2 of 5
Min
30
15
5
—
250
—
—
—
Typ
—
—
—
—
—
—
—
250
Max
—
—
—
1.0
800
1.0
0.5
—
Unit
V
V
V
µA
V
V
MHz
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 1 V, IC = 150 mA*2
VCE = 1 V, IC = 150 mA*2
IC = 500 mA, IB = 50 mA*2
VCE = 1 V, IC = 150 mA*2
2SD1306
Main Characteristics
Typical Output Characteristics
10
150
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100
50
50
0
100
150
8
15.0
6
12.5
10.0
4
7.5
5.0
2
IB = 2.5 µA
2
0
Collector Current IC (mA)
140
120
60
100
80
40
60
40
20
IB = 20 µA
0.2
0.4
0.6
0.8
1.0
VCE = 1 V
8
6
4
2
0.2
0
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
Saturation Voltage vs. Collector Current
300
VCE = 1 V
Pulse
30
10
3
3
10
30
100
300
Collector current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
1000
Base to Emitter Saturation Voltage VBE(sat) (V)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Collector Current IC (mA)
160
80
1,000
DC Current Transfer Ratio hFE
10
10
100
1
1
8
Typical Transfer Characteristics
Typical Output Characteristics
100
6
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
0
4
1,000
VBE(sat)
IC/IB = 10
Pulse
300
100
VCE(sat)
30
10
3
1
1
3
10
30
100
300 1,000
Collector Current IC (mA)
2SD1306
Collector Output Capacitance vs.
Collector to Base Voltage
1,000
VCE = 1 V
500
200
100
50
20
10
2
5
10
20
50
100 200
Collector Current IC (mA)
On Resistance ron (Ω)
IN
3 kΩ
OUT
3 kΩ
IB
3
f = 10 kHz
1.0
0.3
0.1
0.1
0.3
1.0
3
Base Current IB (mA)
Rev.2.00 Aug 10, 2005 page 4 of 5
100
f = 1 MHz
IE = 0
30
10
3
1
1
3
10
30
100
Collector to Base Voltage VCB (V)
On Resistance vs. Base Current
10
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product fT (MHz)
Gain Bandwidth Product vs.
Collector Current
10
2SD1306
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MPAK(T) / MPAK(T)V,
MPAK / MPAKV
PLSP0003ZB-A
SC-59A
D
MASS[Typ.]
0.011g
A
Q
e
E
HE
L
A
c
LP
L1
Reference
Symbol
A3
A
x M S
b
A
e
A2
A
e1
A1
S
b
b1
c1
I1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
A3
b
b1
c
c1
D
E
e
HE
L
L1
LP
x
b2
e1
I1
Q
Dimension in Millimeters
Min
1.0
0
1.0
0.35
0.1
2.7
1.35
2.2
0.35
0.15
0.25
Nom
1.1
0.25
0.42
0.4
0.13
0.11
1.5
0.95
2.8
Max
1.3
0.1
1.2
0.5
0.15
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.55
1.95
1.05
0.3
Ordering Information
Part Name
2SD1306NDTL-E
2SD1306NETL-E
Quantity
3000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
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Colophon .3.0