2SD1306 Silicon NPN Epitaxial REJ03G0784-0200 (Previous ADE-208-1144) Rev.2.00 Aug.10.2005 Application Low frequency amplifier, Muting Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 15 5 0.7 150 150 –55 to +150 Unit V V V A mW °C °C 2SD1306 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO DC current transfer ratio hFE*1 Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Gain bandwidth product fT Notes: 1. The 2SD1306 is grouped by hFE as follows. 2. Pulse test Grade D E Mark ND NE hFE 250 to 500 400 to 800 Rev.2.00 Aug 10, 2005 page 2 of 5 Min 30 15 5 — 250 — — — Typ — — — — — — — 250 Max — — — 1.0 800 1.0 0.5 — Unit V V V µA V V MHz Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 150 mA*2 VCE = 1 V, IC = 150 mA*2 IC = 500 mA, IB = 50 mA*2 VCE = 1 V, IC = 150 mA*2 2SD1306 Main Characteristics Typical Output Characteristics 10 150 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 100 50 50 0 100 150 8 15.0 6 12.5 10.0 4 7.5 5.0 2 IB = 2.5 µA 2 0 Collector Current IC (mA) 140 120 60 100 80 40 60 40 20 IB = 20 µA 0.2 0.4 0.6 0.8 1.0 VCE = 1 V 8 6 4 2 0.2 0 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current Saturation Voltage vs. Collector Current 300 VCE = 1 V Pulse 30 10 3 3 10 30 100 300 Collector current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 1000 Base to Emitter Saturation Voltage VBE(sat) (V) Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (mA) 160 80 1,000 DC Current Transfer Ratio hFE 10 10 100 1 1 8 Typical Transfer Characteristics Typical Output Characteristics 100 6 Collector to Emitter Voltage VCE (V) Ambient Temperature Ta (°C) 0 4 1,000 VBE(sat) IC/IB = 10 Pulse 300 100 VCE(sat) 30 10 3 1 1 3 10 30 100 300 1,000 Collector Current IC (mA) 2SD1306 Collector Output Capacitance vs. Collector to Base Voltage 1,000 VCE = 1 V 500 200 100 50 20 10 2 5 10 20 50 100 200 Collector Current IC (mA) On Resistance ron (Ω) IN 3 kΩ OUT 3 kΩ IB 3 f = 10 kHz 1.0 0.3 0.1 0.1 0.3 1.0 3 Base Current IB (mA) Rev.2.00 Aug 10, 2005 page 4 of 5 100 f = 1 MHz IE = 0 30 10 3 1 1 3 10 30 100 Collector to Base Voltage VCB (V) On Resistance vs. Base Current 10 Collector Output Capacitance Cob (pF) Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current 10 2SD1306 Package Dimensions JEITA Package Code RENESAS Code Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A SC-59A D MASS[Typ.] 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SD1306NDTL-E 2SD1306NETL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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