Transistor 2SB0766, 2SB0766A (2SB766, 2SB766A) Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0874 (2SD874) and 2SD0874A (2SD874A) Unit: mm ■ Features Parameter Symbol Collector to 2SB0766 base voltage 2SB0766A Emitter to base voltage VEBO Peak collector current Unit –30 –5 V ICP –1.5 A Collector current IC –1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.25 0.4max. 4.0–0.20 3.0±0.15 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : or more, and the board A(2SB0766) B(2SB0766A) (Ta=25˚C) Parameter Symbol Collector cutoff current 0.4±0.04 V –50 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 0.5±0.08 1.5±0.1 3 –25 1cm2 45° 0.4±0.08 V –60 VCEO emitter voltage 2SB0766A * Ratings VCBO 2SB0766 Collector to (Ta=25˚C) +0.1 ■ Absolute Maximum Ratings 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● Conditions min typ max Unit – 0.1 µA ICBO VCB = –20V, IE = 0 VCBO IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 VEBO IE = –10µA, IC = 0 –5 hFE1*1 VCE = –10V, IC = –500mA*2 85 hFE2 VCE = –5V, IC = –1A*2 50 VCE(sat) IC = –500mA, IB = –50mA*2 – 0.2 – 0.4 Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA*2 – 0.85 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 200 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 Collector to base 2SB0766 voltage 2SB0766A Collector to emitter 2SB0766 voltage 2SB0766A Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage *1h –30 V –60 –25 V –50 V 340 Rank classification Marking Symbol Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 2SB0766 AQ AR AS 2SB0766A BQ BR BS V MHz 30 *2 FE1 V pF Pulse measurement Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SB0766, 2SB0766A Transistor PC — Ta IC — VCE Ta=25˚C –1.25 1.0 0.8 IB=–10mA –9mA –8mA –1.00 –7mA –6mA –5mA – 0.75 0.6 –4mA –3mA – 0.50 0.4 –2mA – 0.25 0.2 0 –1mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –10 –3 Ta=–25˚C –1 75˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Ta=75˚C 300 25˚C 200 –25˚C 100 –3 –10 IE=0 f=1MHz Ta=25˚C Single pulse Ta=25˚C –3 ICP –1 IC t=10ms – 0.3 25 t=1s – 0.1 20 – 0.03 15 2SB0766 – 0.003 –30 –100 Collector to base voltage VCB (V) – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –1 2SB0766A – 0.01 10 5 VCB=–10V Ta=25˚C 160 140 120 100 80 60 40 –3 1 3 10 30 Emitter current IE (mA) Area of safe operation (ASO) –10 30 –10 0 –1 Collector current IC (A) 35 –3 20 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 40 –1 Collector current IC (A) fT — I E 400 Collector current IC (A) Collector output capacitance Cob (pF) – 0.03 –10 500 Cob — VCB 2 25˚C –25˚C 180 50 –10 Ta=75˚C 200 Collector current IC (A) –3 –1 VCE=–10V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –30 0 –1 –3 – 0.1 600 IC/IB=10 45 –8 –10 hFE — IC –100 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –6 –30 Collector to emitter voltage VCE (V) VBE(sat) — IC 25˚C –4 IC/IB=10 – 0.3 Transition frequency fT (MHz) 0 Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 VCE(sat) — IC –100 –1.50 Collector current IC (A) Collector power dissipation PC (W) 1.4 –10 Collector to emitter voltage VCE (V) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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