Transistor 2SD0875 (2SD875) Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm * 2.5±0.1 +0.25 4.0–0.20 0.4max. 0.4±0.08 0.5±0.08 1.5±0.1 ■ Absolute Maximum Ratings Parameter 45° +0.1 ● Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.4±0.04 3.0±0.15 (Ta=25˚C) 3 Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : X Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 0.1 µA Collector cutoff current ICBO VCB = 20V, IE = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 80 V Collector to emitter voltage VCEO IC = 100µA, IB = 0 80 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V hFE1 Forward current transfer ratio *1 VCE = 10V, IC = 150mA*2 130 330 hFE2 VCE = 5V, IC = 500mA*2 Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA*2 0.2 0.4 V Base to emitter saturation voltage VBE(sat) IC = 300mA, IB = 30mA*2 0.85 1.2 V –50mA*2, 50 Transition frequency fT VCB = 10V, IE = Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz f = 200MHz 100 120 MHz 11 pF *2 *1h FE1 Pulse measurement Rank classification Rank R S hFE1 130 ~ 220 185 ~ 330 Marking Symbol XR XS Note.) The Part number in the Parenthesis shows conventional part number. 1 2SD0875 Transistor Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 1.0 0.8 0.6 0.4 IB=10mA 1.0 9mA 8mA 7mA 6mA 0.8 5mA 0.6 4mA 3mA 0.4 2mA 0.2 0.2 0 1mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 30 10 3 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 10 30 100 300 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 1000 1 3 10 30 100 300 1000 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 30 20 Single pulse TC=25˚C 3 ICP Collector current IC (A) 40 1 IC t=1s 0.3 DC 0.1 0.03 0.01 10 0.003 0 10 –25˚C 0.03 0.01 0.003 0.001 1 3 10 30 100 Collector to base voltage VCB (V) 30 0.001 0.1 0.3 1 3 100 300 1000 Collector current IC (mA) VCB=10V Ta=25˚C 10 30 160 120 80 40 0 –1 –3 –10 –30 Emitter current IE (mA) Area of safe operation (ASO) 10 50 3 Ta=75˚C 25˚C 0.1 200 Collector current IC (mA) 1 0.3 fT — IE 0 3 1 VCE=10V 0.01 1 3 10 300 IC/IB=10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 IC/IB=10 hFE — IC 100 Collector output capacitance Cob (pF) 6 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 1 4 Transition frequency fT (MHz) 0 2 VCE(sat) — IC Ta=25˚C Collector current IC (A) Collector power dissipation PC (W) IC — VCE 1.2 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.4 100 Collector to emitter voltage VCE (V) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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