UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR DESCRIPTION Low frequency power amplifier. 1 TO-126C 1 TO-252 *Pb-free plating product number: 2SB857L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB857-x-T6C-K 2SB857L-x-T6C-K 2SB857-x-TN3-R 2SB857L-x-TN3-R 2SB857-x-TN3-T 2SB857L-x-TN3-T Package TO-126C TO-252 TO-252 Pin Assignment 1 2 3 E C B B C E B C E Packing Bulk Tape Reel Tube 2SB857L-x-T6C-K (1)Packing Type (1) K: Bulk, R: Tape Reel, T: Tube (2)Package Type (2) T6C: TO-126C, TN3: TO-252 (3)Rank (3) x: refer to Classification of hFE2 (4)Lead Plating (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R217-206,C 2SB857 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃) PARAMETER Collector-Base Voltages Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (IC Peak) SYMBOL VCBO VCEO VEBO IC IC(PEAK) RATINGS UNIT -130 V -100 V -5 V -4 A -8 A TO-126C 1.5 W Total Power Dissipation PD TO-252 1.9 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=-10µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=-50mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=-10µA, IC=0 Collector-Emitter Saturation Voltage *VCE(SAT) IC=-2A, IB=-0.2A Base-Emitter Saturation Voltage *VBE(ON) VCE=-4V, IC=-1A Collector Cut-off Current ICBO VCB=-130V, IC=0 *hFE1 VCE=-4V, IC=-0.1A DC Current Gain *hFE2 VCE=-4V, IC=-1A Transition Frequency fT VCE=-4V, IC=-500mA, f=100MHz Note *Pulse Test: Pulse Width≦380µS, Duty Cycle≦2%. MIN -130 -100 -5 TYP MAX -1 -1 -1 35 60 UNIT V V V V V µA 320 15 MHz CLASSIFICATION OF hFE2 CLASSIFICATION RANGE B 60 ~ 120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw C 100 ~ 200 D 160 ~ 320 2 of 4 QW-R217-206,C 2SB857 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS 1000 Saturation Voltage vs. Collector Current hFE vs. Collector Current 10000 Saturation Voltage (mV) hFE @ VCE=4V hFE 100 10 100 1 1 10 1000 100 Collector Current (mA) 10000 1000 VBE(ON) @ VCE=4V 10 VBE (SAT ) @ IC=10I B Capacitance vs. Reverse-Biased Voltage On Voltage vs. Collector Current 1000 VBE(SAT) @ IC=10I B 100 10 10000 1000 100 Collector Current (mA) 100 1000 Collector Current (mA) 10000 100 C ob 10 1 10 Reverse-Biased Voltage (V) 100 Safe Operating Area 10 PT=1ms Collector Current, IC (A) On Voltage (mV) 10000 10 Capacitance (pF) 1 1 1000 1 PT=1s PT=100ms 0.1 1 10 100 1000 Forward Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R217-206,C 2SB857 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R217-206,C