Product Bulletin OPB819 November 2000 Slotted Optical Switch Type OPB819 Features • Non-contact switching • 24”wire leads • 1.25”(32 mm) wide slot • 1.38”(35 mm) deep slot Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Description The OPB819 consists of an infrared emitting diode and NPN silicon phototransistor mounted in a plastic houising on opposite sides of a 1.25” (31.75 mm) wide slot. Phototransistor switching takes place whenever an opaque object passes through the slot. Custom electrical, wire or cabling is available. Contact your local representative or Optek for more information. Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . . . -40°C to +80°C Input Diode Continuous Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Peak Forward Current (1 µs pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . 3.0 A Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) Output Photosensor Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter-Collector Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(1) NOTES: (1) Derate linearly 1.67 mW/°C above 25°C. (2) All parameters tested using pulse technique. Precautions: Exposure of the plastic body to chlorinated hydrocarbons and ketones such as thread lock and instant adhesive products will degrade the plastic body. Cleaning agents methanol and isopropanol are recommended. Spray or wipe do not submerge. Visit our website at www.optekinc.com or email us at [email protected] Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 Type OPB819 Electrical Characteristics (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS Input Diode VF Forward Voltage 1.8 V IF = 20 mA IR Reverse Current 100 µA VR = 2.0 V Output Phototransistor V(BR)CEO Collector-Emitter Breakdown Voltage 30 V IC = 100 µA, I F = 0, Ee = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 V IE = 100 µA, I F = 0, Ee = 0 I CEO Collector-Emitter Dark Current 100 nA VCE = 10.0 V, I F = 0, Ee = 0 Collector-Emitter Saturation Voltage 0.40 V IC = 250 µA, I F = 40 mA µA VCE = 5.0 V, IF = 40 mA Coupled VCE(SAT) IC(ON) On-State Collector Current 100 Optek re serves the right to make changes at any time in order to im prove design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396